Abstract: An energy efficient, low distortion amplification apparatus includes: a differential amplifier having a pair of differential inputs, a pair of outputs, and a bias current control input; a digital delay having an n-bit word input and an m-bit word output; a digital-to-analog converter (DAC) having an input coupled to the output of the digital delay and a pair of differential outputs coupled to the pair of differential inputs of the differential amplifier; and a bias current controller having an input coupled to the digital delay and having an output coupled to the bias current control input of the differential amplifier.

Abstract: An attenuation circuit uses a voltage controlled variable resistance transistor as a signal attenuator for receivers operating in the zero Hz to about 30 MHz range. The transistor functions in the linear region to linearize the transistor resistance characteristics used for signal attenuation. In an exemplary application, the attenuation circuit is used as an RF attenuator for AM radio broadcast receivers and amplifiers with automatic gain control. Multiple attenuation circuits can be coupled in parallel, each attenuation circuit having a different sized variable resistance transistor, to form sequentially activated stages that increase the range of attenuation while minimizing distortion.

Abstract: An attenuation circuit uses a voltage controlled variable resistance transistor as a signal attenuator for receivers operating in the zero Hz to about 30 MHz range. The transistor functions in the linear region to linearize the transistor resistance characteristics used for signal attenuation. In an exemplary application, the attenuation circuit is used as an RF attenuator for AM radio broadcast receivers and amplifiers with automatic gain control. Multiple attenuation circuits can be coupled in parallel, each attenuation circuit having a different sized variable resistance transistor, to form sequentially activated stages that increase the range of attenuation while minimizing distortion.

Abstract: Voltage controlled variable attenuators are described that are configured to be coupled to a transmission path to furnish variable attenuation of a signal, such as a radio frequency signal. In one or more implementations, the voltage controlled variable attenuator includes at least one transistor. The transistor has an open configuration for at least substantially preventing the flow of current through the transistor, and a closed configuration for at least partially allowing the flow of current through the transistor. The variable attenuator also includes a resistive component coupled to the transistor, and configured to couple to the transmission path. The resistive component is configured to at least partially mitigate non-linear effect when the transistor transitions from the open configuration to the closed configuration.

Abstract: An attenuation circuit uses a voltage controlled variable resistance transistor as a signal attenuator for receivers operating in the zero Hz to about 30 MHz range. The transistor functions in the linear region to linearize the transistor resistance characteristics used for signal attenuation. In an exemplary application, the attenuation circuit is used as an RF attenuator for AM radio broadcast receivers and amplifiers with automatic gain control. Multiple attenuation circuits can be coupled in parallel, each attenuation circuit having a different sized variable resistance transistor, to form sequentially activated stages that increase the range of attenuation while minimizing distortion.

Abstract: An attenuation circuit uses a voltage controlled variable resistance transistor as a signal attenuator for receivers operating in the zero Hz to about 30 MHz range. The transistor functions in the linear region to linearize the transistor resistance characteristics used for signal attenuation. In an exemplary application, the attenuation circuit is used as an RF attenuator for AM radio broadcast receivers and amplifiers with automatic gain control. Multiple attenuation circuits can be coupled in parallel, each attenuation circuit having a different sized variable resistance transistor, to form sequentially activated stages that increase the range of attenuation while minimizing distortion.

Abstract: An attenuation circuit uses a voltage controlled variable resistance transistor as a signal attenuator for receivers operating in the zero Hz to about 30 MHz range. The transistor functions in the linear region to linearize the transistor resistance characteristics used for signal attenuation. In an exemplary application, the attenuation circuit is used as an RF attenuator for AM radio broadcast receivers and amplifiers with automatic gain control. Multiple attenuation circuits can be coupled in parallel, each attenuation circuit having a different sized variable resistance transistor, to form sequentially activated stages that increase the range of attenuation while minimizing distortion.

Abstract: An attenuation circuit uses a voltage controlled variable resistance transistor as a signal attenuator for receivers operating in the zero Hz to about 30 MHz range. The transistor functions in the linear region to linearize the transistor resistance characteristics used for signal attenuation. In an exemplary application, the attenuation circuit is used as an RF attenuator for AM radio broadcast receivers and amplifiers with automatic gain control. Multiple attenuation circuits can be coupled in parallel, each attenuation circuit having a different sized variable resistance transistor, to form sequentially activated stages that increase the range of attenuation while minimizing distortion.

Abstract: The present invention teaches a variety of driver amplifiers having a transmit mode suitable for driving the load resistance of a network with an amplified version of the input signal, and a standby mode wherein the driver amplifier consumes substantially no current and isolates the load resistance from the input signal. These amplifiers are also characterized in that during transitions back and forth between standby mode and transmit mode, a minimum of standby transient leaks out onto the network. Further, the noise power delivered to the network in standby mode is substantially minimized, the remaining noise being primarily due to thermal noise produced by a resistor utilized to provide matched termination to the network.

Abstract: An amplifier (10) receives a bias voltage to the gate of a depletion mode field effect transistor (12). In one embodiment, a bias circuit (20) offsets (22) the bias voltage from a power supply potential (26) to maintain substantially constant drain current over a range of threshold voltages (34,36,38) caused by process and temperature variation. In an alternate embodiment, a transistor (58) in the bias circuit (50) provides an incremental current flow to compensate the bias voltage of the MESFET for variation in threshold voltages. The bias circuit is applicable to other depletion mode field effect transistor circuits having a negative threshold voltage.

Abstract: A frequency mixer circuit uses an impedance transforming power combiner to sum the power levels of RF and LO input signals and drive an output field effect transistor (FET). The nonlinear transconductance in the FET creates the sum and difference mixing products for providing an IF output signal operating at a frequency equal to the difference between the frequencies of the RF and LO input signals. The power combiner is impedance matched to the gate of the FET in order to minimize reflections back into the power combiner. The impedance transforming power combiner reduces component count and associated physical space requirements of the frequency mixing circuit.