Abstract: A thin-film transistor can include: a body of source material; a source-channel interface at the body of source material; a drain; a gate; and a body of channel material disposed within an influence of the gate between the source and the drain. The body of channel material is adjacent to the source-channel interface and includes a channel metal oxide. The source-channel interface includes a majority of an oxide of a majority metal and a minority of an oxide of an oxide-stabilizing metal, where an oxide of the oxide-stabilizing metal has a greater hydrogen stability than an oxide of the majority metal. A method of manufacturing a thin-film transistor can include: forming a body of source material; forming a source-channel interface at the body of source material; forming a body of drain material; forming a body of channel material; and forming a body of gate material.

Abstract: An example thin-film transistor includes a source, a drain, a gate, and a body of channel material disposed within the influence of the gate between the source and the drain. The body of channel material includes a metal oxide. The body of channel material forms a carrier channel between the source and the drain when sufficient voltage is applied to the gate. The source includes a body of source material that includes ruthenium and an oxide-stabilizing metal that has an oxide that has greater hydrogen stability than ruthenium oxide.

Abstract: An example thin-film transistor includes a source, a drain, a gate, and a body of channel material disposed within the influence of the gate between the source and the drain. The body of channel material includes a metal oxide. The body of channel material forms a carrier channel between the source and the drain when sufficient voltage is applied to the gate. The source includes a body of source material that includes ruthenium and an oxide-stabilizing metal that has an oxide that has greater hydrogen stability than ruthenium oxide.