Patents by Inventor Joel Gamoras

Joel Gamoras has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120068118
    Abstract: Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided.
    Type: Application
    Filed: October 20, 2011
    Publication date: March 22, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: J. Wallace Parce, Paul Bernatis, Robert Dubrow, William P. Freeman, Joel Gamoras, Shihai Kan, Andreas Meisel, Baixin Qian, Jeffery A. Whiteford, Jonathan Ziebarth
  • Publication number: 20120041246
    Abstract: Nanowires useful as heterogeneous catalysts are provided. The nanowire catalysts are useful in a variety of catalytic reactions, for example, the oxidative coupling of methane to ethylene. Related methods for use and manufacture of the same are also disclosed.
    Type: Application
    Filed: May 24, 2011
    Publication date: February 16, 2012
    Applicant: Siluria Technologies, Inc.
    Inventors: Erik C. Scher, Fabio R. Zurcher, Joel M. Cizeron, Wayne P. Schammel, Alex Tkachenko, Joel Gamoras, Dmitry Karshtedt, Greg Nyce
  • Patent number: 8062967
    Abstract: Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.
    Type: Grant
    Filed: June 1, 2009
    Date of Patent: November 22, 2011
    Assignee: Nanosys, Inc.
    Inventors: Erik C. Scher, Mihai A. Buretea, William P. Freeman, Joel Gamoras, Baixin Qian, Jeffery A. Whiteford
  • Publication number: 20110251295
    Abstract: Methods for producing electronic grade metal nanostructures having low levels of contaminants are provided. Monolayer arrays, populations, and devices including such electronic grade nanostructures are described. In addition, novel methods and compositions for production of Group 10 metal nanostructures and for production of ruthenium nanostructures are provided, along with methods for recovering nanostructures from suspension.
    Type: Application
    Filed: May 27, 2011
    Publication date: October 13, 2011
    Applicant: NANOSYS, INC.
    Inventors: Srikanth Ranganathan, Paul Bernatis, Joel Gamoras, Chao Liu, J. Wallace Parce
  • Patent number: 7976646
    Abstract: Methods for producing electronic grade metal nanostructures having low levels of contaminants are provided. Monolayer arrays, populations, and devices including such electronic grade nanostructures are described. In addition, novel methods and compositions for production of Group 10 metal nanostructures and for production of ruthenium nanostructures are provided, along with methods for recovering nanostructures from suspension.
    Type: Grant
    Filed: August 18, 2006
    Date of Patent: July 12, 2011
    Assignee: Nanosys, Inc.
    Inventors: Srikanth Ranganathan, Paul Bernatis, Joel Gamoras, Chao Liu, J. Wallace Parce
  • Publication number: 20110150695
    Abstract: Methods for producing electronic grade metal nanostructures having low levels of contaminants are provided. Monolayer arrays, populations, and devices including such electronic grade nanostructures are described. In addition, novel methods and compositions for production of Group 10 metal nanostructures and for production of ruthenium nanostructures are provided, along with methods for recovering nanostructures from suspension.
    Type: Application
    Filed: August 18, 2006
    Publication date: June 23, 2011
    Applicant: NANOSYS, Inc.
    Inventors: Srikanth Ranganathan, Paul Bernatis, Joel Gamoras, Chao Liu, J. Wallace Parce
  • Patent number: 7794600
    Abstract: The present invention relates to a method of processing nanocrystals. The method comprises providing a mixture comprising nanocrystals, contaminants and a first solvent in which the nanocrystals are soluble, and using chromatography to reduce the amount of contaminants in the mixture. The method optionally comprises isolating the nanocrystals after chromatography. The method allows for the production of nanocrystal compositions having a total amount of surfactant associated therewith, the amount of surfactant comprising an amount of bound surfactant and an amount of free surfactant in the solvent, the amount of free surfactant being less than about 1% of the total amount of surfactant in the solvent. The present invention, accordingly, also relates to such compositions and corresponding composites of nanocrystals in organic polymer matrices.
    Type: Grant
    Filed: August 25, 2005
    Date of Patent: September 14, 2010
    Assignee: Nanosys, Inc.
    Inventors: Mihai A. Buretea, Joel Gamoras, Erik C. Scher, Jeffery A. Whiteford
  • Publication number: 20100140551
    Abstract: Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided.
    Type: Application
    Filed: November 9, 2009
    Publication date: June 10, 2010
    Applicant: NANOSYS, Inc.
    Inventors: J. Wallace Parce, Paul Bernatis, Robert Dubrow, William P. Freeman, Joel Gamoras, Shihai Kan, Andreas Meisel, Baixin Qian, Jeffery A. Whiteford, Jonathan Ziebarth
  • Patent number: 7645397
    Abstract: Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided.
    Type: Grant
    Filed: July 24, 2006
    Date of Patent: January 12, 2010
    Assignee: Nanosys, Inc.
    Inventors: J. Wallace Parce, Paul Bernatis, Robert Dubrow, William P. Freeman, Joel Gamoras, Shihai Kan, Andreas Meisel, Baixin Qian, Jeffery A. Whiteford, Jonathan Ziebarth
  • Patent number: 7557028
    Abstract: Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.
    Type: Grant
    Filed: July 8, 2005
    Date of Patent: July 7, 2009
    Assignee: Nanosys, Inc.
    Inventors: Erik C. Scher, Mihai A. Buretea, William P. Freeman, Joel Gamoras, Baixin Qian, Jeffery A. Whiteford
  • Publication number: 20070034833
    Abstract: Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided.
    Type: Application
    Filed: July 24, 2006
    Publication date: February 15, 2007
    Inventors: J. Parce, Paul Bernatis, Robert Dubrow, William Freeman, Joel Gamoras, Shihai Kan, Andreas Meisel, Baixin Qian, Jeffery Whiteford, Jonathan Ziebarth