Patents by Inventor Joel Hollingsworth
Joel Hollingsworth has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128062Abstract: A substrate support includes a monolithic anisotropic body, which includes first, second and intermediate layers. The first layer is formed of a first material and disposed therein are RF and clamping electrodes. The second layer is formed of the first material or a second material and disposed therein is a heating element. The intermediate layer is formed of a different material than the first and second layers, such that at least one of: a thermal energy conductivity of the intermediate layer is different than a thermal energy conductivity of at least one of the first or second materials; or an electrical energy conductivity of the intermediate layer is different than an electrical conductivity of at least one of the first or second materials. Either the intermediate layer is disposed between the first and second layers or the second layer is disposed between the first and intermediate layers.Type: ApplicationFiled: October 20, 2020Publication date: April 18, 2024Inventors: Joel HOLLINGSWORTH, Ramkishan LINGAMPALLI, Karl LEESER, Stephen TOPPING, Noah Elliot BAKER
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Publication number: 20240023204Abstract: Various embodiments herein relate to techniques for fabricating a platen for use in a semiconductor processing apparatus, as well as the platens and intermediate structures produced by such techniques. For example, such techniques may include depositing a coating on a heater to form a coated heater, where the heater includes a metal wire on which the coating is formed; placing the coated heater in powder; consolidating the powder into a cohesive mass to form a powder-based composite; and sintering the powder-based composite to form the platen, where the platen includes the heater embedded in sintered ceramic material. The coating on the heater may act to protect the heater from chemical attack from carbon- and/or oxygen-containing compounds that may be present during sintering. The platen may be part of a pedestal that, once fabricated, may be installed in a semiconductor processing apparatus.Type: ApplicationFiled: September 28, 2021Publication date: January 18, 2024Inventors: Joel Hollingsworth, Ramkishan Rao Lingampalli, Pankaj Hazarika
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Publication number: 20230317423Abstract: A component for use in a plasma processing chamber system is START provided. The component for use in a processing chamber system comprises a bulk component body comprising magnesium aluminum oxynitride and sintering aids. The sintering aids comprise at least one of yttria, yttrium aluminate, rare earth metal oxide, and rare earth metal aluminate.Type: ApplicationFiled: October 27, 2021Publication date: October 5, 2023Inventors: Pankaj HAZARIKA, Joel HOLLINGSWORTH, Matthew Brian SCHICK, Pratima G.N. RAO
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Publication number: 20230073259Abstract: A baseplate for a substrate support includes a heater layer configured to selectively heat the baseplate and a heat spreader disposed between the heater layer and an upper surface of the baseplate. The heat spreader is configured to distribute heat provided by the heater layer throughout the baseplate. The baseplate includes a first material that has a first coefficient of thermal expansion (CTE) and a first thermal conductivity. The heat spreader includes a second material that has a second CTE and a second thermal conductivity greater than the first thermal conductivity.Type: ApplicationFiled: February 17, 2021Publication date: March 9, 2023Inventors: Ramesh CHANDRASEKHARAN, Karl Frederick LEESER, Christopher GAGE, Seshu NIMMALA, Ramkishan Rao LINGAMPALLI, Joel HOLLINGSWORTH, Vincent BURKHART, William LAFFERTY, Sergey Georgiyevich BELOSTOTSKIY
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Publication number: 20220415620Abstract: A thermal choke rod connecting a radio frequency source to a substrate support of a plasma processing system includes a tubular member having a first connector for connecting to an RF rod coupled to the substrate support and a second connector for connecting to an RF strap that couples to the RF source. A tubular segment extends between the first and second connectors. The first connector has a conically-shaped end region that tapers away from the inner surface thereof to an outer surface in a direction toward the tubular segment, and slits that extend for a prescribed distance from a terminal end of the first connector. The outer surface of the tubular segment has a threaded region for threaded engagement with an annular cap that fits over the first connector and reduces an inner diameter of the first connector upon contact with the conically-shaped end region of the first connector.Type: ApplicationFiled: August 31, 2022Publication date: December 29, 2022Inventors: Timothy S. THOMAS, Vincent BURKHART, Joel HOLLINGSWORTH, David FRENCH, Damien SLEVIN
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Patent number: 11469084Abstract: A thermal choke rod connecting a radio frequency source to a substrate support of a plasma processing system includes a tubular member having a first connector for connecting to an RF rod coupled to the substrate support and a second connector for connecting to an RF strap that couples to the RF source. A tubular segment extends between the first and second connectors. The first connector has a conically-shaped end region that tapers away from the inner surface thereof to an outer surface in a direction toward the tubular segment, and slits that extend for a prescribed distance from a terminal end of the first connector. The outer surface of the tubular segment has a threaded region for threaded engagement with an annular cap that fits over the first connector and reduces an inner diameter of the first connector upon contact with the conically-shaped end region of the first connector.Type: GrantFiled: September 5, 2017Date of Patent: October 11, 2022Assignee: Lam Research CorporationInventors: Timothy S. Thomas, Vince Burkhart, Joel Hollingsworth, David French, Damien Slevin
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Patent number: 10431467Abstract: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and a backside gas tube made of metallized ceramic material that is located in an interior of the stem. The metallized ceramic tube can be used to deliver backside gas to the substrate and supply RF power to an embedded electrode in the pedestal.Type: GrantFiled: November 20, 2018Date of Patent: October 1, 2019Assignee: Lam Research CorporationInventors: Ramkishan Rao Lingampalli, Joel Hollingsworth, Bradley Baker
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Publication number: 20190109008Abstract: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and a backside gas tube made of metallized ceramic material that is located in an interior of the stem. The metallized ceramic tube can be used to deliver backside gas to the substrate and supply RF power to an embedded electrode in the pedestal.Type: ApplicationFiled: November 20, 2018Publication date: April 11, 2019Applicant: LAM RESEARCH CORPORATIONInventors: Ramkishan Rao Lingampalli, Joel Hollingsworth, Bradley Baker
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Publication number: 20190071778Abstract: A thermal choke rod connecting a radio frequency source to a substrate support of a plasma processing system includes a tubular member having a first connector for connecting to an RF rod coupled to the substrate support and a second connector for connecting to an RF strap that couples to the RF source. A tubular segment extends between the first and second connectors. The first connector has a conically-shaped end region that tapers away from the inner surface thereof to an outer surface in a direction toward the tubular segment, and slits that extend for a prescribed distance from a terminal end of the first connector. The outer surface of the tubular segment has a threaded region for threaded engagement with an annular cap that fits over the first connector and reduces an inner diameter of the first connector upon contact with the conically-shaped end region of the first connector.Type: ApplicationFiled: September 5, 2017Publication date: March 7, 2019Inventors: Timothy S. Thomas, Vince Burkhart, Joel Hollingsworth, David French, Damien Slevin
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Publication number: 20180350610Abstract: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and a backside gas tube made of metallized ceramic material that is located in an interior of the stem. The metallized ceramic tube can be used to deliver backside gas to the substrate and supply RF power to an embedded electrode in the pedestal.Type: ApplicationFiled: May 30, 2017Publication date: December 6, 2018Applicant: LAM RESEARCH CORPORATIONInventors: Ramkishan Rao Lingampalli, Joel Hollingsworth, Bradley Baker
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Patent number: 10147610Abstract: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and a backside gas tube made of metallized ceramic material that is located in an interior of the stem. The metallized ceramic tube can be used to deliver backside gas to the substrate and supply RF power to an embedded electrode in the pedestal.Type: GrantFiled: May 30, 2017Date of Patent: December 4, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Ramkishan Rao Lingampalli, Joel Hollingsworth, Bradley Baker
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Patent number: 8541776Abstract: Improved memory devices that include one or more nanostructures such as carbon nanotubes or other nanostructures, as well as systems and devices incorporating such improved memory devices, are disclosed. In at least some embodiments, the improved memory device is of a nonvolatile type such as a flash memory device, and employs a pair of triodes that form a memory cell, where each triode employs at least one carbon nanotube. Also disclosed are methods of operating and fabricating such improved memory devices.Type: GrantFiled: December 1, 2006Date of Patent: September 24, 2013Assignee: The Regents of the University of CaliforniaInventors: Prabhakar R. Bandaru, Joel Hollingsworth
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Publication number: 20090175073Abstract: Improved memory devices that include one or more nanostructures such as carbon nanotubes or other nanostructures, as well as systems and devices incorporating such improved memory devices, are disclosed. In at least some embodiments, the improved memory device is of a nonvolatile type such as a flash memory device, and employs a pair of triodes that form a memory cell, where each triode employs at least one carbon nanotube. Also disclosed are methods of operating and fabricating such improved memory devices.Type: ApplicationFiled: December 1, 2006Publication date: July 9, 2009Inventors: Prabhakar R. Bandaru, Joel Hollingsworth