Patents by Inventor Joel M. GREGIE

Joel M. GREGIE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit structures having differentiated workfunction layers
    Patent number: 11476164
    Abstract: Integrated circuit structures having differentiated workfunction layers are described. In an example, an integrated circuit structure includes a first gate electrode above a substrate. The first gate electrode includes a first workfunction material layer. A second gate electrode is above the substrate. The second gate electrode includes a second workfunction material layer different in composition from the first workfunction material layer. The second gate electrode does not include the first workfunction material layer, and the first gate electrode does not include the second workfunction material layer. A third gate electrode above is the substrate. The third gate electrode includes a third workfunction material layer different in composition from the first workfunction material layer and the second workfunction material layer. The third gate electrode does not include the first workfunction material layer and does not include the second workfunction material layer.
    Type: Grant
    Filed: September 26, 2017
    Date of Patent: October 18, 2022
    Assignee: Intel Corporation
    Inventors: Ying Pang, Florian Gstrein, Dan S. Lavric, Ashish Agrawal, Robert Niffenegger, Padmanava Sadhukhan, Robert W. Heussner, Joel M. Gregie
  • INTEGRATED CIRCUIT STRUCTURES HAVING DIFFERENTIATED WORKFUNCTION LAYERS
    Publication number: 20200219775
    Abstract: Integrated circuit structures having differentiated workfunction layers are described. In an example, an integrated circuit structure includes a first gate electrode above a substrate. The first gate electrode includes a first workfunction material layer. A second gate electrode is above the substrate. The second gate electrode includes a second workfunction material layer different in composition from the first workfunction material layer. The second gate electrode does not include the first workfunction material layer, and the first gate electrode does not include the second workfunction material layer. A third gate electrode above is the substrate. The third gate electrode includes a third workfunction material layer different in composition from the first workfunction material layer and the second workfunction material layer. The third gate electrode does not include the first workfunction material layer and does not include the second workfunction material layer.
    Type: Application
    Filed: September 26, 2017
    Publication date: July 9, 2020
    Inventors: Ying PANG, Florian GSTREIN, Dan S. LAVRIC, Ashish AGRAWAL, Robert NIFFENEGGER, Padmanava SADHUKHAN, Robert W. HEUSSNER, Joel M. GREGIE