Abstract: A device for detecting the pressure exerted at different points of a flexible and/or pliable object that may assume different shapes, includes a plurality of capacitive pressure sensors and at least a system for biasing and reading the capacitance of the sensors. The requirements of flexibility or pliability are satisfied by capacitive pressure sensors formed by two orthogonal sets of parallel or substantially parallel electrodes spaced, at least at each crossing between an electrode of one set and an electrode of the other set, by an elastically compressible dielectric, forming an array of pressure sensing pixel capacitors. The system for biasing and reading the capacitance includes column plate electrode selection circuits and row plate electrode selection circuits and a logic circuit for sequentially scanning the pixel capacitors and outputting pixel values of the pressure for reconstructing a distribution map of the pressure over the area of the array.

Abstract: A device for detecting the pressure exerted at different points of a flexible and/or pliable object that may assume different shapes, includes a plurality of capacitive pressure sensors and at least a system for biasing and reading the capacitance of the sensors. The requirements of flexibility or pliability are satisfied by capacitive pressure sensors formed by two orthogonal sets of parallel or substantially parallel electrodes spaced, at least at each crossing between an electrode of one set and an electrode of the other set, by an elastically compressible dielectric, forming an array of pressure sensing pixel capacitors. The system for biasing and reading the capacitance includes column plate electrode selection circuits and row plate electrode selection circuits and a logic circuit for sequentially scanning the pixel capacitors and outputting pixel values of the pressure for reconstructing a distribution map of the pressure over the area of the array.

Abstract: In a first step, the semiconductor material is doped in a known manner with impurities having a given conductivity type and a given concentration profile. In a second step, the material is maintained at a high temperature, bombarded with a beam of particles which are accelerated with a given energy so as to penetrate into the crystal during a predetermined time interval. The resultant migration of impurities produces an increase in the impurity concentration irrespective of the sign of the initial concentration gradient within a zone adjacent to the zone of stopping of the particles.