Abstract: Various embodiments of the present application are directed towards a method for forming a reusable vacuum bag, as well as the reusable vacuum bag resulting from the method. In some embodiments, the method comprises providing a mold. The mold comprises a pair of plates that collectively define a cavity with layout of a reusable vacuum bag. A vacuum bag material is added to the cavity. For example, silicone may be added (e.g., injected or poured) into a cavity. The vacuum bag material is cured within the cavity to form the reusable vacuum bag. The reusable vacuum bag is thereafter removed from the mold. In some embodiments, the reusable vacuum bag resulting from the method comprises an integrated vacuum seal, an integrated sensor pad, an integrated vacuum port pad, an integrated vacuum track, uniform wall thicknesses, tapered or rounded edges, or any combination of the foregoing.

Abstract: Various embodiments of the present application are directed towards a method for forming a reusable vacuum bag, as well as the reusable vacuum bag resulting from the method. In some embodiments, the method comprises providing a mold. The mold comprises a pair of plates that collectively define a cavity with layout of a reusable vacuum bag. A vacuum bag material is added to the cavity. For example, silicone may be added (e.g., injected or poured) into a cavity. The vacuum bag material is cured within the cavity to form the reusable vacuum bag. The reusable vacuum bag is thereafter removed from the mold. In some embodiments, the reusable vacuum bag resulting from the method comprises an integrated vacuum seal, an integrated sensor pad, an integrated vacuum port pad, an integrated vacuum track, uniform wall thicknesses, tapered or rounded edges, or any combination of the foregoing.

Abstract: An IC device includes an MOS device having a gate terminal, a source terminal and a drain terminal, the gate terminal being operatively coupled to an input of the IC device, the drain terminal being operatively coupled to an output of the IC device, and the source terminal being coupled to a negative voltage supply. The IC device further includes a bias generator operatively coupled to the gate terminal of the MOS device, the bias generator generating a bias voltage and/or a bias current for biasing the MOS device at a substantially constant quiescent operating point. The bias generator is configured such that the bias voltage and/or bias current varies as a function of a junction temperature of the MOS device. In this manner, the bias generator accurately tracks one or more operating conditions of the MOS device, thereby improving the performance of the device.