Patents by Inventor Joel N. Duenow

Joel N. Duenow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10134590
    Abstract: Systems and methods for growing high-quality CdTe-based materials at high growth rates are provided. According to an aspect of the invention, a method includes depositing a first CdTe-based layer on a CdTe-based template at a rate of greater than 1 ?m/min. Each of the first CdTe-based layer and the CdTe-based template has a single-crystal structure and/or a large-grain polycrystalline structure. The depositing is performed by physical vapor deposition.
    Type: Grant
    Filed: March 27, 2017
    Date of Patent: November 20, 2018
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: James M. Burst, David S. Albin, Eric Colegrove, Matthew O. Reese, Helio R. Moutinho, Wyatt K. Metzger, Joel N. Duenow
  • Publication number: 20180277365
    Abstract: Systems and methods for growing high-quality CdTe-based materials at high growth rates are provided. According to an aspect of the invention, a method includes depositing a first CdTe-based layer on a CdTe-based template at a rate of greater than 1 ?m/min. Each of the first CdTe-based layer and the CdTe-based template has a single-crystal structure and/or a large-grain polycrystalline structure. The depositing is performed by physical vapor deposition.
    Type: Application
    Filed: March 27, 2017
    Publication date: September 27, 2018
    Inventors: James M. Burst, David S. Albin, Eric Colegrove, Matthew O. Reese, Helio R. Moutinho, Wyatt K. Metzger, Joel N. Duenow
  • Patent number: 9147793
    Abstract: A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.
    Type: Grant
    Filed: June 20, 2012
    Date of Patent: September 29, 2015
    Assignee: Alliance For Sustainable Energy, LLC
    Inventors: Timothy A. Gessert, Rommel Noufi, Ramesh G. Dhere, David S. Albin, Teresa Barnes, James Burst, Joel N. Duenow, Matthew Reese
  • Publication number: 20140134786
    Abstract: A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.
    Type: Application
    Filed: June 20, 2012
    Publication date: May 15, 2014
    Applicant: Alliance for Sustainable Energy, LLC
    Inventors: Timothy A. Gessert, Rommel Noufi, Ramesh G. Dhere, David S. Albin, Teresa Barnes, James Burst, Joel N. Duenow, Matthew Reese
  • Patent number: 8253012
    Abstract: A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm2/V-sec while simultaneously maintaining a high carrier density of ˜4.4e×1020 cm?3.
    Type: Grant
    Filed: March 17, 2008
    Date of Patent: August 28, 2012
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: Timothy A. Gessert, Joel N. Duenow, Teresa Barnes, Timothy J. Coutts
  • Publication number: 20100171082
    Abstract: A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm2/V-sec while simultaneously maintaining a high carrier density of ˜4.4e×1020 cm?3.
    Type: Application
    Filed: March 17, 2008
    Publication date: July 8, 2010
    Applicant: ALLIANCE FOR SUSTAINABLE ENERGY , LLC
    Inventors: Timothy A. Gessert, Joel N. Duenow, Teresa Barnes, Timothy J. Coutts