Abstract: A system and method for endpoint detection is provided based on hyperspectral imaging technology and the exhaust gas chamber from a semiconductor processing chamber. The system includes a processing chamber that holds a substrate for processing. An exhaust gas line connects to an exhaust outlet of the processing chamber and directs exhaust gas to an exhaust chamber. A first RF power source connects to the exhaust chamber and generates an exhaust plasma from a portion of the exhaust gas within the exhaust chamber. A hyperspectral imaging (HSI) camera measures hyperspectral images of the exhaust plasma in the exhaust chamber. A method of processing the HSI images for endpoint detection is described.

Abstract: A system for gas measurement includes an exhaust line coupled with a semiconductor processing chamber, an exhaust plasma chamber coupled with the exhaust line, an optical emission spectroscopy (OES) detector coupled to the exhaust plasma chamber, and a flow controller device coupled to the exhaust plasma chamber and the exhaust line by a gas injection line. The exhaust plasma chamber is configured to generate a plasma from gas received through the exhaust line. The flow controller device is configured to inject gas into the exhaust plasma chamber.

Abstract: Aspects of the present disclosure provide a method for optical emission spectroscopy (OES) detector signal sensitivity improvement. For example, the method can include scanning OES spectra of an optical emission, and defining all wavelengths of the optical emission whose intensities do not satisfy a predetermined requirement. The method can further include adjusting the intensity of each of the defined wavelengths by a first predetermined factor, and calculating an amplification/attenuation coefficient corresponding to the intensity of the defined wavelength based on the first predetermined factor. The method can further include conducting data analysis on the optical emission by taking into account all the amplification/attenuation coefficients.

Abstract: A method of characterizing a plasma in a plasma processing system that includes: generating a pulsed plasma in a plasma processing chamber of the plasma processing system, the pulsed plasma being powered with a pulsed power signal, each pulse of the pulsed plasma including three periods: a overshoot period, a stable-ON period, and a decay period; performing cyclic optical emission spectroscopy (OES) measurements for the pulsed plasma, the cyclic OES measurements including: obtaining first OES data during one of the three periods from more than one pulses of the pulsed plasma; and obtaining a characteristic of the pulsed plasma for the one of the three periods based only on the first OES data.

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of the plasma processing chamber for a first time duration; and after the first time duration, determining a process endpoint by: while exposing the substrate to the plasma by applying the first power to the first electrode, applying a second power to a second electrode of the plasma processing chamber for a second time duration that is shorter than the first time duration; and obtaining an optical emission spectrum (OES) from the plasma while applying the second power to the second electrode, where an energy of the second power over the second time duration is less than an energy of the first power over a sum of the first and the second time durations by a factor of at least 2.

Abstract: An optical emission spectroscopy (OES) detection device includes an optical collector configured to be optically coupled to a plasma in a plasma processing apparatus, an adjustable wavelength filter optically coupled to the optical collector, and a photodetector optically coupled to the adjustable wavelength filter. The optical collector receives an optical signal from the plasma. The adjustable wavelength filter is configured to automatically adjust a passband of the adjustable wavelength filter to include a selected wavelength in response to receiving a wavelength selection signal, and allow a filtered portion of the optical signal to pass through while excluding a remaining portion of the optical signal. The filtered portion includes the selected wavelength. The photodetector is configured to generate an OES measurement in response to detecting the filtered portion of the optical signal with a response time that is less than one millisecond.

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.

Abstract: A processing system that includes: a processing chamber configured to hold a substrate to be processed; a first vacuum pump; a second vacuum pump disposed downstream from the first vacuum pump; an exhaust gas line connecting the process chamber and the first vacuum pump, and the first vacuum pump and the second vacuum pump; a plasma power supply including a first RF power source configured to generate a plasma from a portion of an exhaust gas between the first and second vacuum pumps; and an optical emission spectroscopy (OES) measurement assembly including an OES detector configured to measure OES signals from the plasma.

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of the plasma processing chamber for a first time duration; and after the first time duration, determining a process endpoint by: while exposing the substrate to the plasma by applying the first power to the first electrode, applying a second power to a second electrode of the plasma processing chamber for a second time duration that is shorter than the first time duration; and obtaining an optical emission spectrum (OES) from the plasma while applying the second power to the second electrode, where an energy of the second power over the second time duration is less than an energy of the first power over a sum of the first and the second time durations by a factor of at least 2.

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of the plasma processing chamber for a first time duration; and after the first time duration, determining a process endpoint by: while exposing the substrate to the plasma by applying the first power to the first electrode, applying a second power to a second electrode of the plasma processing chamber for a second time duration that is shorter than the first time duration; and obtaining an optical emission spectrum (OES) from the plasma while applying the second power to the second electrode, where an energy of the second power over the second time duration is less than an energy of the first power over a sum of the first and the second time durations by a factor of at least 2.

Abstract: A method of characterizing a plasma in a plasma processing system that includes: generating a pulsed plasma in a plasma processing chamber of the plasma processing system, the pulsed plasma being powered with a pulsed power signal, each pulse of the pulsed plasma including three periods: a overshoot period, a stable-ON period, and a decay period; performing cyclic optical emission spectroscopy (OES) measurements for the pulsed plasma, the cyclic OES measurements including: obtaining first OES data during one of the three periods from more than one pulses of the pulsed plasma; and obtaining a characteristic of the pulsed plasma for the one of the three periods based only on the first OES data.

Abstract: An advanced optical sensor and method for detection of optical events in a plasma processing system. The method includes detecting at least one light emission signal in a plasma processing chamber. The at least one detected light emission signal including light emissions from an optical event. The method further includes processing the at least one light emission signal and detecting a signature of the optical event from the processed light emission signal.

Abstract: An advanced optical sensor and method for detection of optical events in a plasma processing system. The method includes detecting at least one light emission signal in a plasma processing chamber. The at least one detected light emission signal including light emissions from an optical event. The method further includes processing the at least one light emission signal and detecting a signature of the optical event from the processed light emission signal.

Abstract: A combiner for optical beams includes a substrate overlaid by a multi-layer dielectric film stack. The substrate is a clear material and the dielectric film stack is a series of alternating layer of high and low refractive index. This gives the combiner relatively high reflectivity across UV wavelengths and relatively high transmissivity in the visible and longer wavelengths and allows visible light to pass through the combiner while UV light is reflected. At the same time dielectric film stack has minimal absorption and scatter. This means that the intensity of visible light maintains at least 90% of its intensity as it passes through combiner and UV light retains at least 90% of its intensity as it is reflected by combiner.

Abstract: A flat spectrum illumination source for use in optical metrology systems includes a first light source generating a visible light beam and a second light source generating an ultraviolet light beam. The illumination source also includes an auxiliary light source generating a light beam at wavelengths between the visible light beam and the ultraviolet light beam. The three light beams are combined to provide a broadband probe beam that has substantially even illumination levels across a broad range of wavelengths. Alternately, the illumination source may be fabricated as an array of light emitting diodes selected to cover a range of separate wavelengths. The outputs of the LED array are combined to produce the broadband probe beam.

Abstract: A combiner for optical beams includes a substrate overlaid by a multi-layer dielectric film stack. The substrate is a clear material and the dielectric film stack is a series of alternating layer of high and low refractive index. This gives the combiner relatively high reflectivity across UV wavelengths and relatively high transmissivity in the visible and longer wavelengths and allows visible light to pass through the combiner while UV light is reflected. At the same time dielectric film stack has minimal absorption and scatter. This means that the intensity of visible light maintains at least 90% of its intensity as it passes through combiner and UV light retains at least 90% of its intensity as it is reflected by combiner.

Abstract: A combiner for optical beams includes a substrate overlaid by a multi-layer dielectric film stack. The substrate is a clear material and the dielectric film stack is a series of alternating layer of high and low refractive index. This gives the combiner relatively high reflectivity across UV wavelengths and relatively high transmissivity in the visible and longer wavelengths and allows visible light to pass through the combiner while UV light is reflected. At the same time dielectric film stack has minimal absorption and scatter. This means that the intensity of visible light maintains at least 90% of its intensity as it passes through combiner and UV light retains at least 90% of its intensity as it is reflected by combiner.

Abstract: A flat spectrum illumination source for use in optical metrology systems includes a first light source generating a visible light beam and a second light source generating an ultraviolet light beam. The illumination source also includes an auxiliary light source generating a light beam at wavelengths between the visible light beam and the ultraviolet light beam. The three light beams are combined to provide a broadband probe beam that has substantially even illumination levels across a broad range of wavelengths. Alternately, the illumination source may be fabricated as an array of light emitting diodes selected to cover a range of separate wavelengths. The outputs of the LED array are combined to produce the broadband probe beam.