Abstract: Devices and methods for generating a low temperature atmospheric pressure plasma are disclosed. A method of generating a low temperature atmospheric pressure plasma that comprises coupling a high-frequency power supply to a tuning network that is connected to one or more electrodes, placing one or more non-conducting housings between the electrodes, flowing gas through the one or more housings, and striking and maintaining the plasma with the application of said high-frequency power is described. A technique for the surface treatment of materials with said low temperature atmospheric pressure plasma, including surface activation, cleaning, sterilization, etching and deposition of thin films is also disclosed.

Abstract: A method and apparatus for generating a plasma in a gas using a thermal source and a heat source in a common reaction zone. A process gas is flowed to a reaction zone and heated with a thermal energy source. Within the same reaction zone, a current is passed in the gas to generate a plasma within the gas. The plasma is directed to a substrate for treatment. The substrate may be a silicon wafer as part of an etching, ashing, wafer cleaning, and chemical vapor deposition.

Abstract: A method and apparatus for generating a plasma in a gas using a thermal source and a heat source in a common reaction zone. A process gas is flowed to a reaction zone and heated with a thermal energy source. Within the same reaction zone, a current is passed in the gas to generate a plasma within the gas. The plasma is directed to a substrate for treatment. The substrate may be a silicon wafer as part of an etching, ashing, wafer cleaning, and chemical vapor deposition.

Abstract: A method and apparatus for generating a plasma in a gas using a thermal source and a heat source in a common reaction zone. A process gas is flowed to a reaction zone and heated with a thermal energy source. Within the same reaction zone, a current is passed in the gas to generate a plasma within the gas. The plasma is directed to a substrate for treatment. The substrate may be a silicon wafer as part of an etching, ashing, wafer cleaning, and chemical vapor deposition.

Abstract: A method and apparatus for generating a plasma in a gas using a thermal source and a heat source in a common reaction zone. A process gas is flowed to a reaction zone and heated with a thermal energy source. Within the same reaction zone, a current is passed in the gas to generate a plasma within the gas. The plasma is directed to a substrate for treatment. The substrate may be a silicon wafer as part of an etching, ashing, wafer cleaning, and chemical vapor deposition.

Abstract: A temperature probe for use in low pressure processes having an improved thermal response wherein fluid is supplied to a fluid transport passageway in the probe head for creating an increased pressure between the probe head and a semiconductor wafer for increasing the thermal conductivity therebetween.

Abstract: A radiant heating apparatus for reducing the cumulative temperature gradient over a semiconductor workpiece during a low temperature process is comprised of a plurality of reflecting units, wherein each reflecting unit is comprised of a back reflector, a tubular reflector extending from the back reflector towards the workpiece, and a radiant energy source disposed in the tubular reflector in front of the back reflector, wherein a cross section of the tubular reflector is in the shape of a truncated segment of a circle.

Abstract: Device for producing a sliding or traveling magnetic field, with a substantially constant modulus in a working region (11a), using movable permanent magnets, these permanent magnets forming cylindrical bars (1) with diametrical or radial magnetization, with one or more pairs of poles, arranged side by side with their axes parallel and equidistant (E), placed in one and the same plane (A), the magnetizations (J) of the bars (1) being successively angularly offset by a constant angle, the various bars (1) being driven rotationally around their axis at the same angular velocity and in the same direction, and the distance (Y) between the said working region (11a) and the plane (A) of the axes of the bars (1) being equal to at least 0.75 times the distance (E) between the axes of two successive bars.