Abstract: A method of processing semiconductor material includes applying an organosulfur solution to a top surface of a semiconductor material, the organosulfur solution having at least one organosulfur compound. The at least one organosulfur compound has at least one sulfur atom double bonded to a carbon atom and a pH of not less than 8. An organosulfur solution may be applied at temperatures above 25° C. to increase sulfur deposition rates and increase sulfur coverage on a surface of a semiconductor material.

Abstract: A method of processing semiconductor material includes applying an organosulfur solution to a top surface of a semiconductor material, the organosulfur solution having at least one organosulfur compound. The at least one organosulfur compound has at least one sulfur atom double bonded to a carbon atom and a pH of not less than 8. An organosulfur solution may be applied at temperatures above 25° C. to increase sulfur deposition rates and increase sulfur coverage on a surface of a semiconductor material.

Abstract: Resistive processing unit including: a plurality of transistors each having a lithium-doped region, wherein the plurality of transistors are arranged in an array to provide resistance; at least one first transmission line electrically connected to a source region of each transistor in at least one column of the array; at least one second transmission line electrically connected to a drain region of each transistor in at least one row of the array; and at least one third transmission line electrically connected to a gate region of the plurality of transistors in at least one row of the array; wherein application of an electrical voltage to the at least one first transmission line, the at least one second transmission line or the at least one third transmission line mobilizes lithium ions in the lithium region, thereby affecting a channel resistance of at least one transistor in the plurality of transistors.

Abstract: The present invention provides a method for forming low-defect density changed-orientation Si by amorphization/templated recrystallization (ATR) processes in which regions of Si having a first crystal orientation are amorphized by ion implantation and then recrystallized into the orientation of a template layer having a different orientation. More generally, the invention relates to the high temperature annealing conditions needed to eliminate the defects remaining in Si-containing single crystal semiconductor materials formed by ion-implant-induced amorphization and templated recrystallization from a layer whose orientation may be the same or different from the amorphous layer's original orientation. The key component of the inventive method is a thermal treatment for minutes to hours in the temperature range 1250-1330° C. to remove the defects remaining after the initial recrystallization anneal.

Abstract: The present invention provides a method for forming low-defect density changed-orientation Si by amorphization/templated recrystallization (ATR) processes in which regions of Si having a first crystal orientation are amorphized by ion implantation and then recrystallized into the orientation of a template layer having a different orientation. More generally, the invention relates to the high temperature annealing conditions needed to eliminate the defects remaining in Si-containing single crystal semiconductor materials formed by ion-implant-induced amorphization and templated recrystallization from a layer whose orientation may be the same or different from the amorphous layer's original orientation. The key component of the inventive method is a thermal treatment for minutes to hours in the the temperature range 1250-1330° C. to remove the defects remaining after the initial recrystallization anneal.