Patents by Inventor Joel Varley

Joel Varley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dilute alloy catalysts for electrochemical CO2 reduction
    Patent number: 11959183
    Abstract: A product includes a dilute alloy catalyst for carbon dioxide reduction. The catalyst has a majority component and at least one minority component. The majority component is present in a concentration of greater than 90 atomic percent of the catalyst. The majority component is copper, and each minority component is selected from the group consisting of: a transition metal, a main group metal, a lanthanide, and a semimetal. A method includes forming a product on a cathode. The product includes a dilute alloy catalyst for carbon dioxide reduction. The catalyst has a majority component and at least one minority component. The majority component is present in a concentration of greater than 90 atomic percent of the catalyst. The majority component is copper, and each minority component is selected from the group consisting of: a transition metal, a main group metal, a lanthanide, and a semimetal.
    Type: Grant
    Filed: October 1, 2020
    Date of Patent: April 16, 2024
    Assignee: Lawrence Livermore National Security, LLC
    Inventors: Juergen Biener, Sneha Akhade, Monika Biener, Zhen Qi, Joel Varley, Stephen Weitzner, Vedasri Vedharathinam
  • DILUTE ALLOY CATALYSTS FOR ELECTROCHEMICAL CO2 REDUCTION
    Publication number: 20210147989
    Abstract: A product includes a dilute alloy catalyst for carbon dioxide reduction. The catalyst has a majority component and at least one minority component. The majority component is present in a concentration of greater than 90 atomic percent of the catalyst. The majority component is copper, and each minority component is selected from the group consisting of: a transition metal, a main group metal, a lanthanide, and a semimetal. A method includes forming a product on a cathode. The product includes a dilute alloy catalyst for carbon dioxide reduction. The catalyst has a majority component and at least one minority component. The majority component is present in a concentration of greater than 90 atomic percent of the catalyst. The majority component is copper, and each minority component is selected from the group consisting of: a transition metal, a main group metal, a lanthanide, and a semimetal.
    Type: Application
    Filed: October 1, 2020
    Publication date: May 20, 2021
    Inventors: Juergen Biener, Sneha Akhade, Monika Biener, Zhen Qi, Joel Varley, Stephen Weitzner, Vedasri Vedharathinam
  • Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction
    Patent number: 10446706
    Abstract: A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.
    Type: Grant
    Filed: May 12, 2016
    Date of Patent: October 15, 2019
    Assignees: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD., LAWRENCE LIVERMORE NATIONAL SECURITY, LLC, THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
    Inventors: Neil Mackie, Geordie Zapalac, Weijie Zhang, John F. Corson, Xiaoqing He, Angus Rockett, Joel Varley, Vincenzo Lordi
  • HEXAGONAL PHASE EPITAXIAL CADMIUM SULFIDE ON COPPER INDIUM GALLIUM SELENIDE FOR A PHOTOVOLTAIC JUNCTION
    Publication number: 20190259898
    Abstract: A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.
    Type: Application
    Filed: April 30, 2019
    Publication date: August 22, 2019
    Inventors: Neil Mackie, Geordie Zapalac, Weijie Zhang, John F. Corson, Xiaoqing He, Angus Rockett, Joel Varley, Vincenzo Lordi
  • HEXAGONAL PHASE EPITAXIAL CADMIUM SULFIDE ON COPPER INDIUM GALLIUM SELENIDE FOR A PHOTOVOLTAIC JUNCTION
    Publication number: 20160336475
    Abstract: A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.
    Type: Application
    Filed: May 12, 2016
    Publication date: November 17, 2016
    Inventors: Neil Mackie, Geordie Zapalac, Weijie Zhang, John F. Corson, Xiaoqing He, Angus Rockett, Joel Varley, Vincenzo Lordi