Abstract: The present invention provides for a composition comprising a nanostructure comprising a semiconductor component and a metallic component, with the proviso that when the semiconductor component is Ge the metallic component is not Te. The nanostructure can be in one of two types of structures: (1) a segregated structure, and (2) a mixed structure. In the segregated structure, the semiconductor component and the metallic component are spatially separate, such as in a lobe-lobe structure, poly-lobe structure, or a core-shell structure. In some embodiments, the lobe-lobe structure comprises a metallic component lobe and a semiconductor component lobe. The composition can be used in a memory device.

Abstract: A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Abstract: A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Abstract: A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

Abstract: A semiconductor structure comprises a first photovoltaic cell comprising a first material, and a second photovoltaic cell comprising a second material and connected in series to the first photovoltaic cell. The conduction band edge of the first material adjacent the second material is at most 0.1 eV higher than a valence band edge of the second material adjacent the material. Preferably, the first material of the first photovoltaic cell comprises ln].?Al?N or lnt_yGayN and the second material of the second photovoltaic cell comprises silicon or germanium. Alternatively, the first material of the first photovoltaic cell comprises InAs or InAsSb and the second material of the second photovoltaic cell comprises GaSb or GaAsSb.

Abstract: A compositionally graded Group III-nitride alloy is provided for use in a solar cell. In one or more embodiment, an alloy of either InGaN or InAlN formed in which the In composition is graded between two areas of the alloy. The compositionally graded Group III-nitride alloy can be utilized in a variety of types of solar cell configurations, including a single P-N junction solar cell having tandem solar cell characteristics, a multijunction tandem solar cell, a tandem solar cell having a low resistance tunnel junction and other solar cell configurations. The compositionally graded Group III-nitride alloy possesses direct band gaps having a very large tuning range, for example extending from about 0.7 to 3.4 eV for InGaN and from about 0.7 to 6.2 eV for InAlN.

Abstract: A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.