Patents by Inventor Joel W. Pankow

Joel W. Pankow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multilayer moisture barrier
    Patent number: 9013018
    Abstract: A moisture barrier, device or product having a moisture barrier or a method of fabricating a moisture barrier having at least a polymer layer, and interfacial layer, and a barrier layer. The polymer layer may be fabricated from any suitable polymer including, but not limited to, fluoropolymers such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), or ethylene-tetrafluoroethylene (ETFE). The interfacial layer may be formed by atomic layer deposition (ALD). In embodiments featuring an ALD interfacial layer, the deposited interfacial substance may be, but is not limited to, Al2O3, AlSiOx, TiO2, and an Al2O3/TiO2 laminate. The barrier layer associated with the interfacial layer may be deposited by plasma enhanced chemical vapor deposition (PECVD). The barrier layer may be a SiOxNy film.
    Type: Grant
    Filed: February 17, 2011
    Date of Patent: April 21, 2015
    Assignees: Beneq Oy, U.S. Department of Energy
    Inventors: Joel W. Pankow, Gary J. Jorgensen, Kent M. Terwilliger, Stephen H. Glick, Nora Isomaki, Kari Harkonen, Tommy Turkulainen
  • MOISTURE BARRIER
    Publication number: 20130009264
    Abstract: A moisture barrier, device or product having a moisture barrier or a method of fabricating a moisture barrier having at least a polymer layer, and interfacial layer, and a barrier layer. The polymer layer may be fabricated from any suitable polymer including, but not limited to, fluoropolymers such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), or ethylene-tetrafluoroethylene (ETFE). The interfacial layer may be formed by atomic layer deposition (ALD). In embodiments featuring an ALD interfacial layer, the deposited interfacial substance may be, but is not limited to, Al2O3, AlSiOx, TiO2, and an Al2O3/TiO2 laminate. The barrier layer associated with the interfacial layer may be deposited by plasma enhanced chemical vapor deposition (PECVD). The barrier layer may be a SiOxNy film.
    Type: Application
    Filed: February 17, 2011
    Publication date: January 10, 2013
    Applicants: U.S. DEPARTMENT OF ENERGY, BENEQ OY
    Inventors: Joel W. Pankow, Gary J. Jorgensen, Kent M. Terwilliger, Stephen H. Glick, Nora Isomaki, Kari Harkonen, Tommy Turkulainen
  • Resistor foil
    Publication number: 20020146556
    Abstract: A resistor foil comprised of a layer of copper foil and a coating of an organic molecular semiconductor material on one side of the copper foil.
    Type: Application
    Filed: April 4, 2001
    Publication date: October 10, 2002
    Applicant: GA-TEK Inc. (dba Gould Electronics Inc.)
    Inventors: Joel W. Pankow, Michael A. Centanni