Abstract: The invention relates to the field of materials science and relates to a component, which can be used, for example, for microcomponents, microsensors and microactuators. The object of the present invention is to disclose a component in which a clearly greater relative length change occurs. The object is attained through a component of a ferromagnetic shape memory material, produced by a method in which at least one sacrificial layer is applied onto a single-crystalline or biaxially textured substrate, onto which sacrificial layer an epitaxial or textured layer of a ferromagnetic shape memory material with a layer thickness of ?50 ?m is applied, subsequently the sacrificial layer is removed at least partially, and during or after the layer application a structuring at least of the ferromagnetic shape memory material is realized such that an aspect ratio is achieved in which at least one length is greater by at least a factor of 3 than the thickness of the layer or the shortest dimension of the component.

Abstract: By locally heating specific scan positions within a region of interest and automatically obtaining respective measurement data in a time-resolved and spatially-resolved fashion, dynamic processes within a metallization layer of semiconductor devices may be efficiently monitored and/or modified. For instance, OBIRCH and SEI techniques may be used in combination with the automated data recording and manipulation, thereby providing an efficient means for in situ failure analysis, defect identification, for any dynamic degradation processes in interconnects and interlayer dielectrics.

Abstract: The invention relates to the field of materials science and relates to a component, which can be used, for example, for microcomponents, microsensors and microactuators. The object of the present invention is to disclose a component in which a clearly greater relative length change occurs. The object is attained through a component of a ferromagnetic shape memory material, produced by a method in which at least one sacrificial layer is applied onto a single-crystalline or biaxially textured substrate, onto which sacrificial layer an epitaxial or textured layer of a ferromagnetic shape memory material with a layer thickness of ?50 ?m is applied, subsequently the sacrificial layer is removed at least partially, and during or after the layer application a structuring at least of the ferromagnetic shape memory material is realized such that an aspect ratio is achieved in which at least one length is greater by at least a factor of 3 than the thickness of the layer or the shortest dimension of the component.

Abstract: By locally heating specific scan positions within a region of interest and automatically obtaining respective measurement data in a time-resolved and spatially-resolved fashion, dynamic processes within a metallization layer of semiconductor devices may be efficiently monitored and/or modified. For instance, OBIRCH and SEI techniques may be used in combination with the automated data recording and manipulation, thereby providing an efficient means for in situ failure analysis, defect identification, for any dynamic degradation processes in interconnects and interlayer dielectrics.