Abstract: Disclosed is a field effect transistor (FET) circuit for accepting a bipolar transistor logic level input signal and providing FET logic level output signals (both in-phase and out-of-phase components). The FET circuit includes a gated latch with means for pre-charging first and second nodes to an FET logic up level. One of the two nodes is brought to a slightly higher or lower level (depending on the binary value of the input), thereby producing a latent imbalance in the latch. A gating signal causes the latch to switch into the state pre-set by the latent imbalance.

Abstract: A recharging circuit is provided to maintain a high potential for a longer time interval at the output node of a FET driver circuit. The recharging circuit consists of a first FET which is made periodically conductive via a capacitor and periodically recharges a capacitance at the output node. This capacitance is first charged by a strong pulse of the driver circuit. A second FET is provided to prevent a current flow through the first FET and thus the generation of a power dissipating current when the output potential of the driver circuit is low. The gate of the second FET is connected to a supply voltage. Thus, the second FET is conductive when a low potential exists at the output node, transferring that potential to the gate of the first FET which, in turn, does not become conductive since its gate to source voltage is less than its threshold voltage.

Abstract: To the known sense latch already existing in a bit line pair in an FET memory, and to the two bit switches in each bit line another latch is arranged in series which furthermore is coupled to the common data input and output via a write driver on the one side and a read driver on the other. Both latches are of an identical structure and controlled by the same pulses in the read as well as in the write phase. The data path via the write driver and the read driver up to, or from, the additional latch is respectively designed as unidirectional double rail line, and selectively connectable via the bit switches with the bidirectional double rail line to the respective bit line pair.

Abstract: A high performance semiconductor memory read/write data access circuit including a sense amplifier directly coupled to a pair of bit lines is provided with a pair of bit switching devices to enable data communication external to the memory. Control potentials and timing of switching signals are provided in such a manner that only one of the bit switches becomes conductive during reading and writing access to the memory.