Patents by Inventor Joerg Schumann
Joerg Schumann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240075029Abstract: The present application relates to the use of a phthalazinedione in the prevention or treatment of sequelae of a SARS-CoV-2 infection. Pharmaceutical compositions, combinations, advantageous formulation techniques and a method of treatment are disclosed.Type: ApplicationFiled: December 1, 2021Publication date: March 7, 2024Applicant: METRIOPHARM AGInventors: Wolfgang BRYSCH, Astrid KAISER, Petra SCHULZ, Sara SCHUMANN, Jörg WEGERER
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Patent number: 8415747Abstract: A semiconductor device includes a cathode and an anode. The anode includes a first p-type semiconductor anode region and a second p-type semiconductor anode region. The first p-type semiconductor anode region is electrically connected to an anode contact area. The second p-type semiconductor anode region is electrically coupled to the anode contact area via a switch configured to provide an electrical connection or an electrical disconnection between the second p-type anode region and the anode contact area.Type: GrantFiled: December 28, 2010Date of Patent: April 9, 2013Assignee: Infineon Technologies Austria AGInventors: Hans-Günter Eckel, Jörg Schumann
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Publication number: 20120161224Abstract: A semiconductor device includes a cathode and an anode. The anode includes a first p-type semiconductor anode region and a second p-type semiconductor anode region. The first p-type semiconductor anode region is electrically connected to an anode contact area. The second p-type semiconductor anode region is electrically coupled to the anode contact area via a switch configured to provide an electrical connection or an electrical disconnection between the second p-type anode region and the anode contact area.Type: ApplicationFiled: December 28, 2010Publication date: June 28, 2012Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Hans-Günter Eckel, Jörg Schumann
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Publication number: 20120067276Abstract: Equipment for depositing a fluid deposition substance onto baked goods, comprises a reservoir for the fluid deposition substance. a deposition unit to deposit the fluid deposition substance onto the baked goods, a feed means to feed the fluid deposition substance from the reservoir into the deposition unit, a conveyor configured underneath the depositing unit to convey the baked goods relative to the deposition unit along one direction of conveyance, a collecting unit situated underneath the conveyor to collect excess deposition substance that was not received on the baked goods, and a temperature controller allowing to temperature-control the equipment at least in segments. The conveyor is fitted with substantially bar-shaped baked-goods support elements which are configured mutually spaced apart in the direction of conveyance (R1) and in a direction (R2) transverse to the direction (R1).Type: ApplicationFiled: September 16, 2011Publication date: March 22, 2012Applicant: NBS Neue Backtechnik SchumannInventor: Joerg SCHUMANN
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Patent number: 7666752Abstract: The present invention relates to a method for depositing a dielectric material comprising a transition metal compound. After providing a substrate, a first pre-cursor comprising a transition metal compound and a second pre-cursor predominantly comprising at least one of water vapour, ammonia and hydrazine are successively applied on the substrate for forming a first layer of transition metal containing material. In a next step the first pre-cursor and a third pre-cursor comprising at least one of ozone and oxygen are successively applied on the first layer for forming a second layer of the transition metal containing material.Type: GrantFiled: January 19, 2007Date of Patent: February 23, 2010Assignee: Qimonda AGInventors: Stephan Kudelka, Lars Oberbeck, Uwe Schroeder, Tim Boescke, Johannes Heitmann, Annette Saenger, Joerg Schumann, Elke Erben
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Publication number: 20080191197Abstract: A memory cell reversibly switchable between different stable electrical resistance states, the memory cell having a first electrode and a second electrode and an active layer arranged between the first and the second electrode, the active layer including a compound represented by general formula , wherein R1 and R2 are independently selected from —H, —(CH2)mCH3, -phenyl, —O—(CH2)mCH3, —O-phenyl, —S(CH2)mCH3, —S-aryl, —NR3R4, —SR3 and -halogen; R1 and R2 may together form a ring; R5 and R6 are independently selected from —H, -alkyl, -aryl and -heteroaryl; m is either 0 or an integer ranging from 1 to 10; n is an integer ranging from 2 to 1000; and a compound represented by general formula wherein R7, R8, R9, R10, R11, R12, R13, and R14 are independently selected from the group consisting of —H, —(CH2)mCH3, -phenyl, —O—(CH2)mCH3, —O-phenyl, —CO(CH2)mCH3, -halogen, —CN and —NO2; R7 and R8 may together form a ring; R8 and R9 may together form a ring; R9 and R10 may together form a ring; R11 and R12 may toType: ApplicationFiled: July 21, 2005Publication date: August 14, 2008Applicant: QIMONDA AGInventors: Andreas Walter, Recai Sezi, Reimund Engl, Anna Maltenberger, Joerg Schumann, Thomas Weitz
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Publication number: 20080173919Abstract: The present invention relates to a method for depositing a dielectric material comprising a transition metal compound. After providing a substrate, a first pre-cursor comprising a transition metal compound and a second pre-cursor predominantly comprising at least one of water vapour, ammonia and hydrazine are successively applied on the substrate for forming a first layer of transition metal containing material. In a next step the first pre-cursor and a third pre-cursor comprising at least one of ozone and oxygen are successively applied on the first layer for forming a second layer of the transition metal containing material.Type: ApplicationFiled: January 19, 2007Publication date: July 24, 2008Inventors: Stephan Kudelka, Lars Oberbeck, Uwe Schroeder, Tim Boescke, Johannes Heitmann, Annette Saenger, Joerg Schumann, Elke Erben
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Publication number: 20080142774Abstract: An integrated circuit having resistive memory is disclosed. In one embodiment, the memory includes novel memory cells which have two electrodes and a layer arranged in between and including an active material which contains [1,2]dithiolo[4,3-[c]-1,2-dithiol-3,6-dithione, (2,4,7-trinitro-9-fluorenylidene)malonodinitrile and a polymer are disclosed. In one embodiment, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.Type: ApplicationFiled: July 20, 2005Publication date: June 19, 2008Applicant: QIMONDA AGInventors: Andreas Walter, Thomas Weitz, Reimund Engl, Recai Sezi, Anna Maltenberger, Joerg Schumann
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Patent number: 7238964Abstract: A memory cell is provided which comprises two electrodes and a layer arranged in between and comprising an active material comprising (a) a compound selected from the group consisting of in which R1 and R4, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R1 and R2, R2 and R3, R3 and R4 together may form a ring, (b) a compound of the general formula II: in which R5 to R7, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH2, —N(alkyl)2, —N(aryl)2, —N(heteroaryl)2, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R5 and R6 or R7 and R8 together may form a ring, and optionally (c) a polymer.Type: GrantFiled: January 27, 2005Date of Patent: July 3, 2007Assignee: Infineon Technologies AGInventors: Andreas Walter, Recai Sezi, Reimund Engl, Anna Maltenberger, Joerg Schumann, Thomas Weitz
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Patent number: 7211856Abstract: Memory cells having two electrodes and a layer arranged in between and including an active material which contains hexakisbenzylthiobenzene, dichlorodicyano-p-benzoquinone and optionally a polymer are provided. Furthermore, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.Type: GrantFiled: January 24, 2005Date of Patent: May 1, 2007Assignee: Infineon Technologies AGInventors: Recai Sezi, Andreas Walter, Reimund Engl, Anna Maltenberger, Joerg Schumann, Thomas Weitz
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Publication number: 20060237716Abstract: The present invention relates to compositions for storage applications, relates to a memory cell which comprises the abovementioned composition and two electrodes and furthermore relates to a process for the production of microelectronic components and the use of the composition according to the invention in the production of these microelectronic components.Type: ApplicationFiled: March 29, 2006Publication date: October 26, 2006Inventors: Recai Sezi, Andreas Walter, Reimund Engl, Anna Maltenberger, Joerg Schumann
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Patent number: 6984737Abstract: The invention relates to novel 2-(N,N-di(het)arylamino)-thiophene derivatives of formula (I), wherein R1, R2, R3, R4 and R5 are, independently each of other, each a monofunctional (het)aryl system and wherein R1 can also be a bifunctional (het)arylene system, R3 can also be a group R8, except when R1 is a bifunctional (het)arylene system, R8 representing chemical bond or a bifunctional (het)arylene system, R4 can also mean R10, R10 representing a chemical bond or a bifunctional (het)arylene system, or R4 can be one of the following groups (II) and (III), R9 representing a chemical bond or a bifunctional (het)arylene system and R5 can also be H or (IV).Type: GrantFiled: January 19, 2001Date of Patent: January 10, 2006Assignee: Siemens AktiengesellschaftInventors: Horst Hartmann, Andreas Kanitz, Wolfgang Rogler, Jörg Schumann
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Publication number: 20050186737Abstract: Memory cells having two electrodes and a layer arranged in between and including an active material which contains hexakisbenzylthiobenzene, dichlorodicyano-p-benzoquinone and optionally a polymer are provided. Furthermore, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.Type: ApplicationFiled: January 24, 2005Publication date: August 25, 2005Inventors: Recai Sezi, Andreas Walter, Reimund Engl, Anna Maltenberger, Joerg Schumann, Thomas Weitz
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Publication number: 20050179033Abstract: A memory cell is provided which comprises two electrodes and a layer arranged in between and comprising an active material comprising (a) a compound selected from the group consisting of in which R1 and R4, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R1 and R2, R2 and R3, R3 and R4 together may form a ring, (b) a compound of the general formula II: in which R5 to R7, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH2, —N(alkyl)2, —N(aryl)2, —N(heteroaryl)2, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R5 and R6 or R7 and R8 together may form a ring, and optionally (c) a polymer.Type: ApplicationFiled: January 27, 2005Publication date: August 18, 2005Inventors: Andreas Walter, Recai Sezi, Reimund Engl, Anna Maltenberger, Joerg Schumann, Thomas Weitz
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Patent number: 6258469Abstract: The benzidine derivatives of the invention are symmetrical compounds of the following structure: in which: n=1, 2 or 3; R1=H, phenyl or 1-naphthyl, R2 and R3 together form a fused benzene ring, an a- or b-fused naphthalene ring or a fused 1,2,5-thiadiazole ring.Type: GrantFiled: August 17, 1999Date of Patent: July 10, 2001Assignee: Siemens AktiengesellschaftInventors: Andreas Kanitz, Jörg Schumann