Abstract: The present invention relates to a method and an apparatus for measuring the thickness d of a transparent layer (10), and in particular to a method and an apparatus for measuring the thickness d of glass plates during wet-chemical glass thinning in the manufacturing process. The method for measuring the thickness d of a transparent layer (10) includes: determining an approximate thickness dFFT based on a precisely known dispersion n(l) of the material of the layer (10) by performing Fast Fourier Transformation, FFT, analysis on Fabry-Pérot oscillation, FPO, from the layer (10) in a spectral reflectance measurement (900); and performing a FPO full-spectral fitting procedure (910-0) with the approximated thickness dFFT as starting value d0,0 to determine an initial local best fitting thickness dFPO,0.

Abstract: The invention relates to a method and to a device for the in-situ determination of the temperature ? of a sample, in particular to a method and to a device for the surface-corrected determination of the temperature ? of a sample by means of the band-edge method. It is provided that, for the in-situ determination of the temperature ? of a sample (10) when growing a layer stack (12) in a deposition system, a surface-corrected transmission spectrum T?(?) is calculated by determining the quotient of the transmission spectrum T(?) and a correction function K(?), the correction function K(?) being calculated from a determined reflection spectrum R(?). Subsequently, the spectral position of the band-edge ?BE is determined from the transmission spectrum T?(?), and the temperature ? is determined from the spectral position of the band-edge ?BE by means of a known dependency ?(?BE).

Abstract: A flat light emitting plate, a method for calibrating a pyrometer and a method for determining the temperature of a semiconducting wafer inside a processing chamber by said pyrometer. The invention provides a method for calibrating a pyrometer by means of a cold source which is also applicable to processing chambers with a narrow slit. According to the invention, a flat light emitting plate for simulating thermal radiation is provided, comprising a main body made of a transparent material, a light emission area located on an upper surface of the light emitting plate for emitting light, at least one light source located on a lateral surface of the light emitting plate, at least one detector located on a lateral surface of the light emitting plate, and a regulating circuit for adjusting the intensity of light emitted by the light sources.

Abstract: An apparatus for measuring a curvature of a surface (1), comprising means for irradiating a first light beam (S1), a second light beam (S2) and a third light beam (S3) onto a surface (1) of a sample (12), a detector (5) comprising at least one detector plane and being adapted to detect a first position of the reflected first light beam (S1), a second position of the reflected second light beam (S2) and a third position of the reflected third light beam (S3) in the at least one detector plane, means for determining a first distance between the first position of the first light beam (S1) and the third position of the third light beam (S3) and a second distance between the second position of the second light beam (S2) and the third position of the third light beam (S3), and means for determining a mean curvature of the surface from the first distance and the second distance.

Abstract: A pyrometer that is adapted for detecting radiation in the range of 250 to 450 nm is disclosed. The pyrometer can be used for determining the temperature of a matter thermally emitting only ultraviolet-radiation. In particular, the pyrometer can include: a detector having an active area adapted for measuring thermal radiation, a longpass filter having a cut-off wavelength in the range of 400 to 450 nm, means adapted for alternately activating and deactivating the longpass filter, means adapted for measuring a first thermal radiation signal when the longpass filter is deactivated and adapted for measuring a second thermal radiation signal when the longpass filter is activated, and means adapted for determining a temperature corresponding to the measured thermal radiation from a difference of the first radiation signal and the second radiation signal.

Abstract: A method for calibrating a pyrometer a temperature of a calibration sample is determined from the ratio of a first reflectance and a second reflectance and the pyrometer is calibrated by assigning the determined temperature of the calibration sample with a thermal radiation signal measured by the pyrometer.

Abstract: The present invention provides for an apparatus for measuring a curvature of a surface of a wafer in a multi-wafer epitaxial reactor.

Abstract: The present invention relates to a method and an apparatus for determining the layer thickness and the refractive index of a sample. It is an object of the present invention to provide a method for determining the layer thickness of a sample (layer) having high light scattering characteristics that allows a fast (real-time process) and cost-effective measurement having a high accuracy.

Abstract: A pyrometer that is adapted for detecting radiation in the range of 250 to 450 nm is disclosed. The pyrometer can be used for determining the temperature of a matter thermally emitting only ultraviolet-radiation. In particular, the pyrometer can include: a detector having an active area adapted for measuring thermal radiation, a longpass filter having a cut-off wavelength in the range of 400 to 450 nm, means adapted for alternately activating and deactivating the longpass filter, means adapted for measuring a first thermal radiation signal when the longpass filter is deactivated and adapted for measuring a second thermal radiation signal when the longpass filter is activated, and means adapted for determining a temperature corresponding to the measured thermal radiation from a difference of the first radiation signal and the second radiation signal.

Abstract: An apparatus for measuring a curvature of a surface (1), comprising means for irradiating a first light beam (S1), a second light beam (S2) and a third light beam (S3) onto a surface (1) of a sample (12), a detector (5) comprising at least one detector plane and being adapted to detect a first position of the reflected first light beam (S1), a second position of the reflected second light beam (S2) and a third position of the reflected third light beam (S3) in the at least one detector plane, means for determining a first distance between the first position of the first light beam (S1) and the third position of the third light beam (S3) and a second distance between the second position of the second light beam (S2) and the third position of the third light beam (S3), and means for determining a mean curvature of the surface from the first distance and the second distance.

Abstract: The present invention relates to a method for calibrating a pyrometer, a method for determining the temperature of a semiconducting wafer and a system for determining the temperature of a semiconducting wafer. It is an object of the present invention to provide a method for calibrating a pyrometer which overcomes the disadvantages of the prior art.

Abstract: The present invention relates to a method and an apparatus for determining the layer thickness and the refractive index of a sample. It is an object of the present invention to provide a method for determining the layer thickness of a sample (layer) having high light scattering characteristics that allows a fast (real-time process) and cost-effective measurement having a high accuracy.

Abstract: A method for the determination of characteristic layer parameters by means of spectral-optical measurements, that allow for precise measurements of the sample temperature even under the conditions of industrial growth processes and furthermore avoids the detection of thermal radiation and reflected radiation by means of twofold phase sensitive frequency modulation by using so called chopper and lock-in amplifier respectively. The wobbling and/or rotating of the sample to be measured is compensated and/or the pyrometer optical path and the optical path of the spectral-optical system are guided separately of each other and/or a separation of the radiation signal for the temperature measurement and the radiation signal for the spectral-optical measurement is implemented by blanking of the irradiated light.