Abstract: A component for a projection exposure apparatus for semiconductor lithography, comprises an optical element and an actuator, which are force-fittingly connected to each other. The actuator at least locally deforms the optical element. The actuator can be configured to minimize the loss in rigidity at the peripheries delimiting the actuator on the imaging quality. A method for designing a component of projection exposure apparatus is provided.

Abstract: In a method for improving imaging properties of an illumination system or a projection objective of a microlithographic projection exposure apparatus, which comprises an optical element having a surface, the shape of the surface is measured directly at various points. To this end, a measuring beam is directed on the points, and the reflected or refracted beam is measured, e.g. using an interferometer. Based on deviations of the measured shape from a target shape, corrective measures are derived so that the imaging errors of the optical system are improved. The corrective measures may comprise a change in the position or the shape of the optical element being analyzed, or another optical element of the optical system. The target shape of the surface may, for example, be determined so that the optical element at least partially corrects imaging errors caused by other optical elements.

Abstract: In a method for improving imaging properties of an illumination system or a projection objective of a microlithographic projection exposure apparatus, which comprises an optical element having a surface, the shape of the surface is measured directly at various points. To this end, a measuring beam is directed on the points, and the reflected or refracted beam is measured, e.g. using an interferometer. Based on deviations of the measured shape from a target shape, corrective measures are derived so that the imaging errors of the optical system are improved. The corrective measures may comprise a change in the position or the shape of the optical element being analyzed, or another optical element of the optical system. The target shape of the surface may, for example, be determined so that the optical element at least partially corrects imaging errors caused by other optical elements.

Abstract: In a method for improving imaging properties of an illumination system or a projection objective of a microlithographic projection exposure apparatus, which comprises an optical element having a surface, the shape of the surface is measured directly at various points. To this end, a measuring beam is directed on the points, and the reflected or refracted beam is measured, e.g. using an interferometer. Based on deviations of the measured shape from a target shape, corrective measures are derived so that the imaging errors of the optical system are improved. The corrective measures may comprise a change in the position or the shape of the optical element being analyzed, or another optical element of the optical system. The target shape of the surface may, for example, be determined so that the optical element at least partially corrects imaging errors caused by other optical elements.

Abstract: A method of manufacturing an integrated circuit provides a metrology mark (e.g., alignment mark or overlay mark). The method includes forming a first plurality of first structures arranged in a matrix in a substrate. Portions of the matrix are covered with a mask such that first portions of the matrix are left exposed and second portions of the matrix are covered. Signal response properties of exposed ones of the first structures in the matrix are altered to form a metrology mark. The metrology mark includes first and second mark portions with different signal response properties and which are aligned to a virtual grid. The evaluation of precisely positioned metrology marks may be improved with low impact on process complexity.

Abstract: A lithography apparatus includes a condenser system and a projection system. The condenser system is configured to irradiate a mask with non-telecentric incident radiation. The projection system is configured to collect and focus a radiation diffracted at an absorber pattern on the mask to a sample. The projection system is further configured to compensate, in the diffracted radiation, a phase and/or intensity variation resulting from the diffraction of the non-telecentric incident radiation, wherein the diffraction results from an absorber pattern provided on the mask.

Abstract: In a method for improving imaging properties of an illumination system or a projection objective of a microlithographic projection exposure apparatus, which comprises an optical element having a surface, the shape of the surface is measured directly at various points. To this end, a measuring beam is directed on the points, and the reflected or refracted beam is measured, e.g. using an interferometer. Based on deviations of the measured shape from a target shape, corrective measures are derived so that the imaging errors of the optical system are improved. The corrective measures may comprise a change in the position or the shape of the optical element being analyzed, or another optical element of the optical system. The target shape of the surface may, for example, be determined so that the optical element at least partially corrects imaging errors caused by other optical elements.

Abstract: A method of focus variation is described herein to achieve a one-step exposure of a wafer without the limitation of applying a complex y-tilt to a wafer stage. The position of the wafer surface to be exposed is periodically varied with respect to the focal plane, or vice versa. This relative movement between the focal plane, or best focus position along the optical axis and the wafer stage, or the wafer surface, is achieved by applying a movement to at least one of the reticle stage, one or more of the optical elements of the projection lens, and the wafer stage. The frequency of the movement is selected in dependence of the laser frequency (upper limit) or the scanning frequency (lower limit).

Abstract: In a method for improving imaging properties of an illumination system or a projection objective of a microlithographic projection exposure apparatus, which comprises an optical element having a surface, the shape of the surface is measured directly at various points. To this end, a measuring beam is directed on the points, and the reflected or refracted beam is measured, e.g. using an interferometer. Based on deviations of the measured shape from a target shape, corrective measures are derived so that the imaging errors of the optical system are improved. The corrective measures may comprise a change in the position or the shape of the optical element being analyzed, or another optical element of the optical system. The target shape of the surface may, for example, be determined so that the optical element at least partially corrects imaging errors caused by other optical elements.

Abstract: An arrangement for the transfer of structural elements of a photomask onto a substrate includes an illumination device, a photomask with a plurality of structural elements, wherein radiation from the illumination device transfers the structural elements of the photomask onto a photoresist placed on a substrate, and an optical element, wherein the optical element produces a local variation in the degree of transmission of the radiation.

Abstract: A method of focus variation is described herein to achieve a one-step exposure of a wafer without the limitation of applying a complex y-tilt to a wafer stage. The position of the wafer surface to be exposed is periodically varied with respect to the focal plane, or vice versa. This relative movement between the focal plane, or best focus position along the optical axis and the wafer stage, or the wafer surface, is achieved by applying a movement to at least one of the reticle stage, one or more of the optical elements of the projection lens, and the wafer stage. The frequency of the movement is selected in dependence of the laser frequency (upper limit) or the scanning frequency (lower limit).

Abstract: In a method for improving imaging properties of an illumination system or a projection objective of a microlithographic projection exposure apparatus, which comprises an optical element having a surface, the shape of the surface is measured directly at various points. To this end, a measuring beam is directed on the points, and the reflected or refracted beam is measured, e.g. using an interferometer. Based on deviations of the measured shape from a target shape, corrective measures are derived so that the imaging errors of the optical system are improved. The corrective measures may comprise a change in the position or the shape of the optical element being analyzed, or another optical element of the optical system. The target shape of the surface may, for example, be determined so that the optical element at least partially corrects imaging errors caused by other optical elements.