Abstract: The invention relates to a device (102) for optical beam expansion of an optical system having a guide tube (220), a first guide cylinder (222) having a first lens (226), wherein the first guide cylinder (202) is arranged within the guide tube (220) so as to be displaceable along the longitudinal axis of the guide tube (220), and a second guide cylinder (224) having a second lens (228), wherein the second guide cylinder (224) is arranged within the guide tube (220) so as to be displaceable along the longitudinal axis of the guide tube (220). A first displacement device is provided to displace the first guide cylinder (222) along the longitudinal axis (340) of the guide tube (220), and a second displacement device is provided to displace the second guide cylinder (224) along the longitudinal axis of the guide tube (220).

Abstract: The invention relates to a device (102) for optical beam expansion of an optical system having a guide tube (220), a first guide cylinder (222) having a first lens (226), wherein the first guide cylinder (202) is arranged within the guide tube (220) so as to be displaceable along the longitudinal axis of the guide tube (220), and a second guide cylinder (224) having a second lens (228), wherein the second guide cylinder (224) is arranged within the guide tube (220) so as to be displaceable along the longitudinal axis of the guide tube (220). A first displacement device is provided to displace the first guide cylinder (222) along the longitudinal axis (340) of the guide tube (220), and a second displacement device is provided to displace the second guide cylinder (224) along the longitudinal axis of the guide tube (220).

Abstract: An F-theta objective is provided that has five individual lenses with a first individual lens as biconcave lens with a focal length, a second individual lens as meniscus with a focal length, a third individual lens as meniscus with a focal length, a fourth individual lens as a biconvex lens with a focal length and a fifth individual lens as a plano-convex lens with a focal length and a total focal length f of the F-theta objective. A ratio between the focal lengths to the total focal length satisfies predetermined conditions.

Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.

Abstract: A device comprising a channel for charge carriers comprising non-ferromagnetic semiconducting in which charge carriers exhibit spin-orbit coupling, a region of semiconducting material of opposite conductivity type to the channel and configured so as to form a junction with the channel for injecting spin-polarized charge carriers into an end of the channel and at least one lead connected to the channel for measuring a transverse voltage across the channel.

Abstract: An F-theta objective is provided that has five individual lenses with a first individual lens as biconcave lens with a focal length, a second individual lens as meniscus with a focal length, a third individual lens as meniscus with a focal length, a fourth individual lens as a biconvex lens with a focal length and a fifth individual lens as a plano-convex lens with a focal length and a total focal length f of the F-theta objective. A ratio between the focal lengths to the total focal lengthsatisfies predetermined conditions.

Abstract: An F-theta objective which is color-corrected for a wavelength range of 1065-1075 nm and is suitable for high laser outputs of more than 1 kW, having sixth individual lenses L1-L6, wherein the lenses are formed of at least two different materials.

Abstract: A memory device is described. The memory device comprises an antiferromagnet. The device may comprise an insulator and an electrode arranged in a tunnel junction configuration. Alternatively, the device may comprise first and second contacts to the antiferromagnet for measuring ohmic resistance of the antiferromagnet. The antiferromagnet is not coupled to any ferromagnet. The state of the antiferromagnet can be set by heating the junction to a temperature at or above a critical temperature at which is possible to re-orientate magnetic moments in the antiferromagnet, applying an external magnetic field and then cooling the antiferromagnet to a temperature below the critical temperature.

Abstract: An F-theta objective which is color-corrected for a wavelength range of 1065-1075 nm and is suitable for high laser outputs of more than 1 kW, having sixth individual lenses L1-L6, wherein the lenses are formed of at least two different materials.

Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.

Abstract: A Lorentz Magnetoresistive sensor having an extremely small lead width and lead spacing is disclosed. The sensor can be constructed by a novel fabrication method that allows the leads to be deposited in such a manner that lead width and spacing between the leads is determined by the as deposited thicknesses of the lead layers and electrically insulating spacer layers between the leads rather than by photolithography. Because the lead thicknesses and lead spacings are not defined photolithograhically, the lead thickness and lead spacing are not limited by photolithographic resolution limits.

Abstract: A Lorentz magnetoresistive sensor having integrated signal amplification. The sensor is constructed upon a substrate such as a semiconductor material, and an amplification circuit such as transistor is constructed directly into the substrate on which the magnetoresistive device is constructed. This integrated signal amplification greatly enhances sensor performance by eliminating a great deal of signal noise that would otherwise be added to the read signal.

Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.

Abstract: A magnetoresistive device comprises a ferromagnetic region, a non-ferromagnetic region, an insulating region and a conductive region. The insulating region is arranged between the ferromagnetic region and the conductive region so as to provide a tunnel barrier. The non-ferromagnetic region separates the insulating region and the ferromagnetic region.

Abstract: A device comprising a channel for charge carriers comprising non-ferromagnetic semiconducting in which charge carriers exhibit spin-orbit coupling, a region of semiconducting material of opposite conductivity type to the channel and configured so as to form a junction with the channel for injecting spin-polarised charge carriers into an end of the channel and at least one lead connected to the channel for measuring a transverse voltage across the channel.

Abstract: A magnetoresistive device comprises a ferromagnetic region, a non-ferromagnetic region, an insulating region and a conductive region. The insulating region is arranged between the ferromagnetic region and the conductive region so as to provide a tunnel barrier. The non-ferromagnetic region separates the insulating region and the ferromagnetic region.

Abstract: A Lorentz magnetoresistive sensor having integrated signal amplification. The sensor is constructed upon a substrate such as a semiconductor material, and an amplification circuit such as transistor is constructed directly into the substrate on which the magnetoresistive device is constructed. This integrated signal amplification greatly enhances sensor performance by eliminating a great deal of signal noise that would otherwise be added to the read signal.

Abstract: A Lorentz Magnetoresistive sensor having an extremely small lead width and lead spacing is disclosed. The sensor can be constructed by a novel fabrication method that allows the leads to be deposited in such a manner that lead width and spacing between the leads is determined by the as deposited thicknesses of the lead layers and electrically insulating spacer layers between the leads rather than by photolithography. Because the lead thicknesses and lead spacings are not defined photolithograhically, the lead thickness and lead spacing are not limited by photolithographic resolution limits.

Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.

Abstract: A magnetic memory device based on easy domain wall propagation and the extraordinary Hall effect includes a perpendicular-to-plane a magnetic electrically conductive element (2) that includes a memory node (3). Electrical conductors (12-15) surround the node (3) so that when energised, a magnetic field is produced to change the magnetization state of the node (3). In memory state “0” a magnetic domain is pinned within tapered portion (5) of the element (2). When a magnetic field is applied to the device, the domain (D) becomes unpinned and extends into the node (3) to produce a “1” state. The state of magnetization is sensed by means of a Hall contact (11). The current pulse (Jc) is applied through the element (2) so that the Hall voltage can be detected.