Abstract: A method for producing an optical element (2), in particular for a projection exposure system (400), according to which a protective layer (11) consisting of a protective material is applied to a surface of a main body (7) until a protective layer thickness is obtained. The main body (7) has a substrate (17) and a reflective layer (18) applied to the substrate (17). The protective layer (11) is at least substantially defect-free.

Abstract: In a method for producing an optical element for an EUV projection exposure apparatus, a shaping layer (221) is applied onto a substrate (20) so as to have a surface roughness of at most 0.5 nm rms directly after the application of the shaping layer onto the substrate.

Abstract: Treating a reflective optical element (104) for the EUV wavelength range that has a reflective coating on a substrate. The reflective optical element in a holder (106) is irradiated with at least one radiation pulse of a radiation source (102) having a duration of between 1 ?s and 1 s. At least one radiation source (102) and the reflective optical element move relative to one another. Preferably, this is carried out directly after applying the reflective coating in a coating chamber (100). Reflective optical elements of this type are suitable in particular for use in EUV lithography or in EUV inspection of masks or wafers, for example.

Abstract: An optical element (14), in particular for EUV lithography, includes a substrate (15), a reflective coating (16) arranged on the substrate (15), and an electrically conductive coating (19) extending between the substrate and the reflective coating, and having at least one first layer (22a) under tensile stress and at least one second layer (22b) under compressive stress. The electrically conductive coating has at least one section (20) that extends on the substrate laterally beyond the reflective coating. Also disclosed is an optical assembly, in particular an EUV lithography system, provided with at least one optical element of this type.

Abstract: Treating a reflective optical element (104) for the EUV wavelength range that has a reflective coating on a substrate. The reflective optical element in a holder (106) is irradiated with at least one radiation pulse of a radiation source (102) having a duration of between 1 ?s and 1 s. At least one radiation source (102) and the reflective optical element move relative to one another. Preferably, this is carried out directly after applying the reflective coating in a coating chamber (100). Reflective optical elements of this type are suitable in particular for use in EUV lithography or in EUV inspection of masks or wafers, for example.

Abstract: A reflective optical element, in particular for a microlithographic projection exposure apparatus has a substrate (101), a reflection layer system (110) and a defect structure (120) of channel-shaped defects (121) which extend inward from the optical effective surface (100a), or from an interface oriented toward the substrate as far as the reflection layer system, and permit egress of hydrogen from the reflection layer system. The channel-shaped defects (121) increase a diffusion coefficient that is characteristic for the egress of the hydrogen from the reflection layer system (110) by at least 20%, in comparison to a similar layer construction without these channel-shaped defects.

Abstract: A reflective optical element (50) having a substrate (52) and a multilayer system (51) that has a plurality of partial stacks (53), each with a first layer (54) of a first material and a second layer (55) of a second material. The first material and the second material differ from one another in refractive index at an operating wavelength of the optical element. Each of the partial stacks has a thickness (Di) and a layer thickness ratio (?i), wherein the layer thickness ratio is the quotient of the thickness of the respective first layer and the partial stack thickness (Di). In a first section of the multilayer system, for at least one of the two variables of partial stack thickness (Di) and layer thickness ratio (?i), the mean square deviation from the respective mean values therefor is at least 10% less than in a second section of the multilayer system.

Abstract: A reflective optical element, in particular for a microlithographic projection exposure apparatus has a substrate (101), a reflection layer system (110) and a defect structure (120) of channel-shaped defects (121) which extend inward from the optical effective surface (100a), or from an interface oriented toward the substrate as far as the reflection layer system, and permit egress of hydrogen from the reflection layer system. The channel-shaped defects (121) increase a diffusion coefficient that is characteristic for the egress of the hydrogen from the reflection layer system (110) by at least 20%, in comparison to a similar layer construction without these channel-shaped defects.

Abstract: A mirror (1a; 1a?; 1b; 1b?; 1c; 1c?) for the EUV wavelength range and having a substrate (S) and a layer arrangement, wherein the layer arrangement includes at least one surface layer system (P??) consisting of a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) include two individual layers composed of different materials for a high refractive index layer (H??) and a low refractive index layer (L??), wherein the layer arrangement includes at least one surface protecting layer (SPL, Lp) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm, and preferably greater than 50 nm.

Abstract: A reflective optical element (50) having a substrate (52) and a multilayer system (51) that has a plurality of partial stacks (53), each with a first layer (54) of a first material and a second layer (55) of a second material. The first material and the second material differ from one another in refractive index at an operating wavelength of the optical element. Each of the partial stacks has a thickness (Di) and a layer thickness ratio (?i), wherein the layer thickness ratio is the quotient of the thickness of the respective first layer and the partial stack thickness (Di). In a first section of the multilayer system, for at least one of the two variables of partial stack thickness (Di) and layer thickness ratio (?i), the mean square deviation from the respective mean values therefor is at least 10% less than in a second section of the multilayer system.

Abstract: A stress-reduced reflective optical element for a working wavelength in the soft X-ray and extreme ultraviolet wavelength range includes a first multilayer system (4) of at least two alternating materials (41, 42) having different real parts of the refractive index at the working wavelength on a substrate (2), which exerts a layer stress on the substrate (2), and comprising a second multilayer system (6) of at least two alternating materials (61, 62) on a substrate (2), which exerts an opposed layer stress on the substrate (2) and is arranged between the first multilayer system (4) and the substrate (2), wherein a first (61) of the at least two materials of the second multilayer system (6) is interrupted by layers (62) having a thickness of up to 1 nm of the at least one further material of the second multilayer system (6) at such distances that the first material is present in an amorphous state.

Abstract: A stress-reduced reflective optical element for a working wavelength in the soft X-ray and extreme ultraviolet wavelength range includes a first multilayer system (4) of at least two alternating materials (41, 42) having different real parts of the refractive index at the working wavelength on a substrate (2), which exerts a layer stress on the substrate (2), and comprising a second multilayer system (6) of at least two alternating materials (61, 62) on a substrate (2), which exerts an opposed layer stress on the substrate (2) and is arranged between the first multilayer system (4) and the substrate (2), wherein one of the materials (61) of the second multilayer system (6) is nickel-vanadium-silicon, and wherein the ratio (G) of the overall thickness of nickel-vanadium-silicon layers (61) within one period (60) of the second multilayer system (6) to the overall thickness of the period (60) of the second multilayer system (6) is at least 0.25.

Abstract: A mirror (1a; 1a?; 1b; 1b?; 1c; 1c?) for the EUV wavelength range and having a substrate (S) and a layer arrangement, wherein the layer arrangement includes at least one surface layer system (P??) consisting of a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) include two individual layers composed of different materials for a high refractive index layer (H??) and a low refractive index layer (L??), wherein the layer arrangement includes at least one surface protecting layer (SPL, Lp) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm, and preferably greater than 50 nm.

Abstract: A stress-reduced reflective optical element for a working wavelength in the soft X-ray and extreme ultraviolet wavelength range includes a first multilayer system (4) of at least two alternating materials (41, 42) having different real parts of the refractive index at the working wavelength on a substrate (2), which exerts a layer stress on the substrate (2), and comprising a second multilayer system (6) of at least two alternating materials (61, 62) on a substrate (2), which exerts an opposed layer stress on the substrate (2) and is arranged between the first multilayer system (4) and the substrate (2), wherein a first (61) of the at least two materials of the second multilayer system (6) is interrupted by layers (62) having a thickness of up to 1 nm of the at least one further material of the second multilayer system (6) at such distances that the first material is present in an amorphous state.

Abstract: A stress-reduced reflective optical element for a working wavelength in the soft X-ray and extreme ultraviolet wavelength range includes a first multilayer system (4) of at least two alternating materials (41, 42) having different real parts of the refractive index at the working wavelength on a substrate (2), which exerts a layer stress on the substrate (2), and comprising a second multilayer system (6) of at least two alternating materials (61, 62) on a substrate (2), which exerts an opposed layer stress on the substrate (2) and is arranged between the first multilayer system (4) and the substrate (2), wherein one of the materials (61) of the second multilayer system (6) is nickel-vanadium-silicon, and wherein the ratio (G) of the overall thickness of nickel-vanadium-silicon layers (61) within one period (60) of the second multilayer system (6) to the overall thickness of the period (60) of the second multilayer system (6) is at least 0.25.