Patents by Inventor Joffre Bernard

Joffre Bernard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to prevent alloy formation when forming layered metal oxides by metal oxidation
    Patent number: 7790497
    Abstract: The present method of fabricating a resistive memory device includes the steps of providing a first electrode, oxidizing a portion of the first electrode with an oxidizing agent, providing a metal body on the oxidized portion of the first electrode, oxidizing the entire metal body with an oxidizing agent, and providing a second electrode on the oxidized metal body.
    Type: Grant
    Filed: December 20, 2007
    Date of Patent: September 7, 2010
    Assignee: Spansion LLC
    Inventors: Steven Avanzino, Jeffrey A. Shields, Joffre Bernard, Suzette K. Pangrle
  • Method to prevent alloy formation when forming layered metal oxides by metal oxidation
    Publication number: 20090163018
    Abstract: The present method of fabricating a resistive memory device includes the steps of providing a first electrode, oxidizing a portion of the first electrode with an oxidizing agent, providing a metal body on the oxidized portion of the first electrode, oxidizing the entire metal body with an oxidizing agent, and providing a second electrode on the oxidized metal body.
    Type: Application
    Filed: December 20, 2007
    Publication date: June 25, 2009
    Inventors: Steven Avanzino, Jeffrey A. Shields, Joffre Bernard, Suzette K. Pangrle
  • Formation of self-aligned passivation for interconnect to minimize electromigration
    Patent number: 6309959
    Abstract: An interconnect opening of an integrated circuit is filled with a conductive fill with the interconnect opening being within an insulating layer on a semiconductor wafer. A seed layer of a first conductive material is deposited conformally onto sidewalls and a bottom wall of the interconnect opening. The interconnect opening is further filled with a second conductive material by growing the second conductive material from the seed layer to form a conductive fill of the first conductive material and the second conductive material within the interconnect opening. The first conductive material and the second conductive material are comprised of a bulk metal, and at least one of the first conductive material and the second conductive material is a metal alloy having an alloy dopant in the bulk metal. In addition, a plasma treatment process is performed to remove any metal oxide or metal hydroxide from a top surface of the conductive fill.
    Type: Grant
    Filed: August 3, 2000
    Date of Patent: October 30, 2001
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Pin-Chin C. Wang, Lu You, Joffre Bernard, Amit Marathe