Abstract: A multi-time programmable memory cell is provided. The multi-time programmable memory cell includes a floating gate formed on a field oxide region formed on a semiconductor substrate. A control gate is formed on the field oxide region and located parallel to a first portion of the floating gate. A program-erase electrode is formed on the field oxide region and proximate to a second portion of the floating gate. A first well region and a second well region are formed in the semiconductor substrate such that a channel region is formed between the first well region and the second well region with a third portion of the floating gate overlaying the channel region.

Abstract: Non-volatile floating gate devices and approaches involve setting or maintaining threshold voltage characteristics relative to thermal processing. In connection with various embodiments, a floating gate device includes a polycrystalline silicon material having an impurity therein. The impurity interacts with the polycrystalline material to resist changes in grain size of the polycrystalline silicon material during thermal processing, and setting charge storage characteristics relative to threshold voltages for the floating gate device.

Abstract: Non-volatile floating gate devices and approaches involve setting or maintaining threshold voltage characteristics relative to thermal processing. In connection with various embodiments, a floating gate device includes a polycrystalline silicon material having an impurity therein. The impurity interacts with the polycrystalline material to resist changes in grain size of the polycrystalline silicon material during thermal processing, and setting charge storage characteristics relative to threshold voltages for the floating gate device.

Abstract: A non-volatile memory cell (200) comprising a floating gate transistor (206) comprising a floating gate (10) positioned between a control gate (14) and a first channel region (232) and an access gate transistor (208) comprising an access gate (22) and a second channel region (234), the first channel region (232) comprising a first implant (242) with a first dosage level (234), and the second channel region comprising a second implant (244) having a second dosage level, the first dosage level being less than the second dosage level.