Patents by Inventor Johan F. Prins

Johan F. Prins has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5609926
    Abstract: A method of doping diamond with relatively large atoms such as aluminium, phosphorus, arsenic and antimony is provided. The method involves implanting the dopant atoms at a low temperature to create a damaged region of point defects in the form of vacancies and interstitial dopant atoms within the crystal lattice of the diamond, and annealing the diamond to reduce the lattice damage and cause dopant interstitial atoms to diffuse into lattice positions. The implantation dose will be low and such as to create density of implanted dopant atoms of no greater than 2.5.times.10.sup.18 cm.sup.3.
    Type: Grant
    Filed: March 20, 1995
    Date of Patent: March 11, 1997
    Inventor: Johan F. Prins
  • Patent number: 5527565
    Abstract: A method of manufacturing a radiation sensor element. The method includes providing a diamond body which comprises crystalline diamond material which has a nitrogen impurity concentration of less than 150 ppm. The body is typically a synthetic diamond manufactured by a high temperature/high pressure process, or by a chemical vapour deposition process. The body is hydrogenated to cause atomic hydrogen to be incorporated into the diamond crystal lattice. Hydrogenation can be carried out by ion implantation, or by exposing the body to a hydrogen plasma. Where the sensor element is to be used as a counting diamond, electrical contacts are formed on the body, for example by ion implantation.
    Type: Grant
    Filed: August 12, 1994
    Date of Patent: June 18, 1996
    Inventors: Leong T. Nam, Rex J. Keddy, Johan F. Prins
  • Patent number: 5385762
    Abstract: A method of producing a doped diamond, typically a boron doped diamond, is provided. The method involves multiple cold implantation/rapid annealing steps. A doped diamond can be produced containing a high concentration of dopant atoms.
    Type: Grant
    Filed: June 7, 1993
    Date of Patent: January 31, 1995
    Inventor: Johan F. Prins
  • Patent number: 4997636
    Abstract: A diamond film is grown on a substrate by providing a non-diamond substrate which has a face-centered cubic (fcc) crystal structure and small crystal lattice mismatch with the lattice of diamond, implanting carbon atoms into the crystal lattice of the substrate and causing the implanted carbon atoms to diffuse out of the substrate and grow epitaxially on the surface of the substrate. The preferred substrate is an fcc metal such as copper, nickel, fcc iron, fcc cobalt or fcc chromium.
    Type: Grant
    Filed: February 15, 1990
    Date of Patent: March 5, 1991
    Inventor: Johan F. Prins
  • Patent number: 4833328
    Abstract: The invention provides a method of preparing a detector which is sensitive to ionizing radiation or atomic emissions. The method includes the steps of forming at least two discrete conductive regions on a counting diamond by ion implantation, at a temperature below 500.degree. C. Subsequently, contacts are applied to the conductive regions to allow charged carriers liberated by the radiation to be detected by an electronic circuit. The invention extends to a detector prepared according to the method. An example of a detector according to the invention comprised a synthetic diamond having a paramagnetic nitrogen impurity concentration of less than 150 parts per million. Two conductive regions were formed on the diamond by bombardment with carbon ions, and contacts were formed on the conductive regions by the applications of silver-loaded epoxy paint.
    Type: Grant
    Filed: June 22, 1987
    Date of Patent: May 23, 1989
    Inventors: Johan F. Prins, Tom L. Nam, Rex J. Keddy
  • Patent number: 4571447
    Abstract: A diamond or diamond-like material containing a p-type semi-conducting layer, an n-type semi-conducting layer and a p-n junction for use as a photovoltaic cell, particularly a solar cell. The material may be included in a suitable unit for generating electric power when exposed to appropriate radiation.
    Type: Grant
    Filed: June 22, 1984
    Date of Patent: February 18, 1986
    Inventor: Johan F. Prins