Abstract: The invention provides circuits and electronic devices which comprise an electrical flow path, at least part of which is formed by a body of a substrate material at least part of which is a doped part having a surface and implanted atoms at or below the surface, at least part of the surface defining a low resistance section of the electrical flow path.

Abstract: The invention provides circuits and electronic devices which comprise an electrical flow path, at least part of which is formed by a body of a substrate material at least part of which is a doped part having a surface and implanted atoms at or below the surface, at least part of the surface defining a low resistance section of the electrical flow path.

Abstract: The invention provides a method of making an ohmic contact to a n-type diamond or an injecting contact to a p-type diamond. The method includes the steps of implanting a surface of the diamond with a n-type dopant atom at a dose just below the amorphisation threshold of the diamond to create an implanted region below the surface and extending from the surface, annealing the implanted region to allow tunnelling of electrons into the diamond in the case of a n-type diamond and allow electrons to be injected into the diamond in the case of a p-type diamond, and metallising at least a portion of the surface through which implantation occurred.

Abstract: A crystalline substrate such as diamond, cubic boron nitride or silicon carbide is doped with a dopant atom such as boron, phosphorus or arsenic. The method includes the steps of creating a first damaged layer containing vacancies and interstitial atoms in the crystal lattice of the crystalline substrate, implanting the dopant atoms under conditions to create a second damaged layer separate from the first damaged layer and containing the dopant atoms, and causing the dopant atoms in the second layer to diffuse out of that layer and into vacancies in the first layer and thereby occupy substitutional positions in that layer.