Abstract: A spin oscillator device including a first spin Hall effect nano-oscillator, SHNO, having an extended multilayered magnetic thin-film stack, wherein a nano-constriction, NC, is provided in the magnetic film stack providing an SHNO including a magnetic free-layer and a spin Hall effect layer, and having a nanoscopic region, wherein the NC is configured to focus electric current to the nanoscopic region, configured to generate the necessary current densities needed to excite magnetization auto-oscillations, MAO, in the magnetic free layer, wherein a circumferential magnetic field surrounds the NC, wherein an externally applied field with a substantial out-of-plane component is configured to control the spatial extension of the MAO towards a second spin oscillator device, which is arranged in MAO communication and synchronized to the first NC.

Abstract: A circuit comprising a DC current source and at least two spin torque oscillators, the at least two spin torque oscillators being electrically coupled to each other and to the DC current source. A circuit comprising phase shifting means is connected in such a way as to cause a phase shift between current and voltage through the spin torque oscillators. An advantage is that the controlled phase shift significantly increases the tolerance for deviating anisotropy fields, which makes manufacturing of spin torque oscillator devices much more feasible in practice.