Abstract: A frequency-chirped integrated silicon-photonic laser may be provided with separate gain and phase-tuning sections in the laser cavity, one or two wavelength filters forming part of the reflective structures defining the cavity, and electro-optic and optionally thermo-optic intra-cavity and filter phase tuners. The electro-optic phase tuners may be driven with synchronized voltage waveforms, at amplitudes determined, based on measurements of the laser output power and chirp, to achieve mode-hop-free frequency chirping with a target chirp amplitude. The waveforms may be predistorted to improve chirp linearity.

Abstract: A frequency-chirped integrated silicon-photonic laser may be provided with separate gain and phase-tuning sections in the laser cavity, one or two wavelength filters forming part of the reflective structures defining the cavity, and electro-optic and optionally thermo-optic intra-cavity and filter phase tuners. The electro-optic phase tuners may be driven with synchronized voltage waveforms, at amplitudes determined, based on measurements of the laser output power and chirp, to achieve mode-hop-free frequency chirping with a target chirp amplitude. The waveforms may be predistorted to improve chirp linearity.

Abstract: A DFB laser includes a III-V semiconductor structure having a laser active region and a grating etched on a bonding surface to provide optical feedback to generate output light. The DFB laser includes a silicon structure having a silicon waveguide configured to receive the output light from a first end of the laser active region. The bonding surface of the III-V semiconductor structure is bonded to a surface of the silicon structure. The silicon structure includes a DFB region having surfaces defining at least two laterally separated silicon portions extending longitudinally and overlapping, with respect to a lamination direction, two lobes of a second lateral mode of the output light in the laser active region, to suppress lasing of a second order mode of the output light.

Abstract: A photonic integrated circuit device can comprise one or more layers having different refraction indices that cause optical coupling issues and losses from layer variations. A film of material can be applied to a layer of the photonic integrated circuit to avoid the issues to increase the optical bandwidth of the photonic integrated circuit device and decrease sensitivity to manufacturing and design processes.

Abstract: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

Abstract: A device for thin-film silicon photonics with an integrated III-V waveguide structure includes a substrate containing a silicon layer and a III-V waveguide structure bonded to the substrate. The device also includes a waveguide transition structure, enabling light to be coupled between the silicon layer and the III-V waveguide structure. The waveguide transition structure may include a first section, a second section, and a third section, each section including one or more tapered segments.

Abstract: A device comprises a substrate having lower and upper silicon layers separated by a lower dielectric layer and a III-V structure bonded to the substrate, with first, second, and third sections along an optical axis. The first section comprises a first upper waveguide segment of the upper silicon layer, increasing in width from a first width to a second width at an interface between the first and second sections, the III-V structure overlapping with a tapered portion of the first upper waveguide segment. The second section comprises a second upper waveguide segment of the upper silicon layer decreasing in width, and a first lower waveguide segment of the lower silicon layer wider than the second upper waveguide segment at the interface between the second and third sections. The third section comprises a second lower waveguide segment of the lower silicon layer.

Abstract: A hybrid distributed feedback (DFB) laser formed from III-V and silicon materials can include a grating in the III-V material to provide optical feedback for mode selection. The grating can include a shift feature in a middle or other parts of the grating to change light output from the gain region. The grating can be a top-surface grating or regrowth can be applied to the III-V structure, which can then be bonded to a silicon structure to couple DFB laser light from the III-V structure to one or more silicon waveguides in the silicon structure.

Abstract: In radio-frequency (RF) devices integrated on semiconductor-on-insulator (e.g., silicon-based) substrates, RF losses may be reduced by increasing the resistivity of the semiconductor device layer in the vicinity of (e.g., underneath and/or in whole or in part surrounding) the metallization structures of the RF device, such as, e.g., transmission lines, contacts, or bonding pads. Increased resistivity can be achieved, e.g., by ion-implantation, or by patterning the device layer to create disconnected semiconductor islands.

Abstract: Described herein are photonic integrated circuits (PICs) comprising a semiconductor optical amplifier (SOA) to output a signal comprising a plurality of wavelengths, a sensor to detect data associated with a power value of each wavelength of the output signal of the SOA, a filter to filter power values of one or more of the wavelengths of the output signal of the SOA, and control circuitry to control the filter to reduce a difference between a pre-determined power value of each filtered wavelength of the output signal of the SOA and the detected power value of each filtered wavelength of the output signal of the SOA.

Abstract: Described are various configurations of optical structures having asymmetric-width waveguides. A photodetector can include parallel waveguides that have different widths, which can be connected via passive waveguide. One or more light absorbing regions can be proximate to the waveguides to absorb light propagating through one or more of the parallel waveguides. Multiple photodetectors having asymmetric width waveguides can operate to transduce light in different modes in a polarization diversity optical receiver.

Abstract: A photonic integrated circuit device can comprise one or more layers having different refraction indices that cause optical coupling issues and losses from layer variations. A film of material can be applied to a layer of the photonic integrated circuit to avoid the issues to increase the optical bandwidth of the photonic integrated circuit device and decrease sensitivity to manufacturing and design processes.

Abstract: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

Abstract: Described are various configurations of optical structures having asymmetric-width waveguides. A photodetector can include parallel waveguides that have different widths, which can be connected via passive waveguide. One or more light absorbing regions can be proximate to the waveguides to absorb light propagating through one or more of the parallel waveguides. Multiple photodetectors having asymmetric width waveguides can operate to transduce light in different modes in a polarization diversity optical receiver.

Abstract: Embodiments of the invention describe polarization insensitive optical devices utilizing polarization sensitive components. Light comprising at least one polarization state is received, and embodiments of the invention select a first optical path for light comprising a first polarization state or a second optical path for light comprising a second polarization state orthogonal to the first polarization state. The optical paths include components to at least amplify and/or modulate light comprising the first polarization state; the second optical path includes a polarization rotator to rotate light comprising the second polarization state to the first polarization state.

Abstract: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

Abstract: Optical fabrication monitor structures can be included in a design fabricated on a wafer from a mask or fabrication reticle. A first set of components can be formed in an initial fabrication cycle, where the first set includes functional components and monitor structures. A second set of components can be formed by subsequent fabrication processes that can potentially cause errors or damage to the first set of components. The monitor structures can be implemented during fabrication (e.g., in a cleanroom) to detect fabrication errors without pulling or scrapping the wafer.

Abstract: Described are various configurations of optical structures having asymmetric-width waveguides. A photodetector can include parallel waveguides that have different widths, which can be connected via passive waveguide. One or more light absorbing regions can be proximate to the waveguides to absorb light propagating through one or more of the parallel waveguides. Multiple photodetectors having asymmetric width waveguides can operate to transduce light in different modes in a polarization diversity optical receiver.

Abstract: Optical fabrication monitor structures can be included in a design fabricated on a wafer from a mask or fabrication reticle. A first set of components can be formed in an initial fabrication cycle, where the first set includes functional components and monitor structures. A second set of components can be formed by subsequent fabrication processes that can potentially cause errors or damage to the first set of components. The monitor structures can be implemented during fabrication (e.g., in a cleanroom) to detect fabrication errors without pulling or scrapping the wafer.

Abstract: In radio-frequency (RF) devices integrated on semiconductor-on-insulator (e.g., silicon-based) substrates, RF losses may be reduced by increasing the resistivity of the semiconductor device layer in the vicinity of (e.g., underneath and/or in whole or in part surrounding) the metallization structures of the RF device, such as, e.g., transmission lines, contacts, or bonding pads. Increased resistivity can be achieved, e.g., by ion-implantation, or by patterning the device layer to create disconnected semiconductor islands.