Patents by Inventor Johan Rothman

Johan Rothman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11119251
    Abstract: The invention relates to a metasurface lens using a planar array of elementary resonators, each elementary resonator being the shape of a cross the arms of which are of unequal length. The phase shift applied by an elementary resonator is dependent on its orientation in the plane of the lens, the orientation of the various elementary resonators being determined depending on the shape of the desired wavefront. Such a lens has a substantially uniform transmission-coefficient distribution and a low chromatic aberration. Furthermore, it has a very good spectral selectivity.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: September 14, 2021
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Giacomo Badano, Johan Rothman
  • Publication number: 20200168756
    Abstract: An avalanche photodiode including an absorption region, a collection region and a multiplication region between the absorption region and the collection region that performs a carrier multiplication by impact ionisation of a single type of carrier. The multiplication region includes a plurality of multilayer structures where each multilayer structure includes, from the absorption region to the collection region, an acceleration layer having a first energy band gap then a multiplication layer having a second energy band gap. The first energy band gap is greater than the second energy band gap.
    Type: Application
    Filed: November 22, 2019
    Publication date: May 28, 2020
    Inventor: Johan Rothman
  • Patent number: 10608040
    Abstract: A photodetection device and a method for manufacturing the device, the device including a substrate and an array of diodes, the substrate including an absorption layer including a first type of doping, and each diode including, in the absorption layer, a collection region including a second type of doping opposite to the first type. The device further includes, under the surface of the substrate, a conductive mesh including at least one conductive channel inserted between the collection regions of two adjacent diodes, the at least one conductive channel including the first type of doping and a higher doping density than the absorption layer. The doping density of the at least one conductive channel is the result of a diffusion of metal in the absorption layer from a metal mesh provided on the surface of the substrate.
    Type: Grant
    Filed: November 25, 2016
    Date of Patent: March 31, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Johan Rothman
  • Patent number: 10566366
    Abstract: A photodetection device including a diode array and a method for production thereof. In the device, each diode of the array includes an absorption region having a first bandgap energy and a collection region having a first doping type, and adjacent diodes in a network are separated by a trench including sides and a bottom. The bottom and sides of the trench form a stabilization layer having a second doping type, opposite the first doping type, and a bandgap energy greater than the first bandgap energy of the absorption regions.
    Type: Grant
    Filed: November 25, 2016
    Date of Patent: February 18, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Johan Rothman, Florent Rochette
  • Patent number: 10559706
    Abstract: A structure of the avalanche photodiode type includes a first P doped semiconducting zone, a second multiplication semiconducting zone adapted to supply a multiplication that is preponderant for electrons, a fourth P doped semiconducting “collection” zone. One of the first and second semiconducting zones forms the absorption zone. The structure also includes a third semiconducting zone formed between the second semiconducting zone and the fourth semiconducting zone. The third semiconducting zone has an electric field in operation capable of supplying an acceleration of electrons between the second semiconducting zone and the fourth semiconducting zone without multiplication of carriers by impact ionisation.
    Type: Grant
    Filed: July 7, 2017
    Date of Patent: February 11, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ET AUX ENERGIES ALTERNATIVES
    Inventor: Johan Rothman
  • Patent number: 10546886
    Abstract: The invention relates to a photodetection device comprising a substrate and a diodes network, the substrate comprising an absorption layer and each diode comprising a collection region with a first type of doping in the absorption layer. The device comprises a conduction mesh under the surface of the substrate, comprising at least one conduction channel inserted between the collection regions of two adjacent diodes, the at least one conduction channel having a second doping type opposite the first type and a higher doping density than the absorption layer. The doping density of the at least one conduction channel is derived from metal diffusion in the absorption layer from a metal mesh present on the substrate surface. The absorption layer has the first doping type. The invention also relates to a method of making such a device.
    Type: Grant
    Filed: April 19, 2017
    Date of Patent: January 28, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Johan Rothman
  • Publication number: 20190383969
    Abstract: The invention relates to a metasurface lens using a planar array of elementary resonators, each elementary resonator being the shape of a cross the arms of which are of unequal length. The phase shift applied by an elementary resonator is dependent on its orientation in the plane of the lens, the orientation of the various elementary resonators being determined depending on the shape of the desired wavefront. Such a lens has a substantially uniform transmission-coefficient distribution and a low chromatic aberration. Furthermore, it has a very good spectral selectivity.
    Type: Application
    Filed: January 11, 2018
    Publication date: December 19, 2019
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Giacomo BADANO, Johan ROTHMAN
  • Publication number: 20180374881
    Abstract: A photodetection device including a diode array and a method for production thereof. In the device, each diode of the array includes an absorption region having a first bandgap energy and a collection region having a first doping type, and adjacent diodes in a network are separated by a trench including sides and a bottom. The bottom and sides of the trench form a stabilization layer having a second doping type, opposite the first doping type, and a bandgap energy greater than the first bandgap energy of the absorption regions.
    Type: Application
    Filed: November 25, 2016
    Publication date: December 27, 2018
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Johan ROTHMAN, Florent ROCHETTE
  • Publication number: 20180337210
    Abstract: A photodetection device and a method for manufacturing the device, the device including a substrate and an array of diodes, the substrate including an absorption layer including a first type of doping, and each diode including, in the absorption layer, a collection region including a second type of doping opposite to the first type. The device further includes, under the surface of the substrate, a conductive mesh including at least one conductive channel inserted between the collection regions of two adjacent diodes, the at least one conductive channel including the first type of doping and a higher doping density than the absorption layer. The doping density of the at least one conductive channel is the result of a diffusion of metal in the absorption layer from a metal mesh provided on the surface of the substrate.
    Type: Application
    Filed: November 25, 2016
    Publication date: November 22, 2018
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Johan ROTHMAN
  • Patent number: 10128386
    Abstract: A semiconducting structure configured to receive electromagnetic radiation, a method for manufacturing such a structure, and a semiconductor component, the semiconductor structure including: a first semiconducting area of a first type of conductivity, a second semiconducting area of a second type of conductivity opposite to the first type of conductivity, the second area being in contact with the first area to form a semiconducting junction. The second area includes a portion for which a concentration of majority carriers is at least ten times less than a concentration of majority carriers of the first area. The second area and its portion are essentially made in a first cavity configured to focus in the first cavity at least one portion of the electromagnetic radiation.
    Type: Grant
    Filed: June 19, 2013
    Date of Patent: November 13, 2018
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Francois Boulard, Roch Espiau De Lamaestre, David Fowler, Olivier Gravrand, Johan Rothman
  • Publication number: 20180013030
    Abstract: A structure of the avalanche photodiode type includes a first P doped semiconducting zone, a second multiplication semiconducting zone adapted to supply a multiplication that is preponderant for electrons, a fourth P doped semiconducting “collection” zone. One of the first and second semiconducting zones forms the absorption zone. The structure also includes a third semiconducting zone formed between the second semiconducting zone and the fourth semiconducting zone. The third semiconducting zone has an electric field in operation capable of supplying an acceleration of electrons between the second semiconducting zone and the fourth semiconducting zone without multiplication of carriers by impact ionisation.
    Type: Application
    Filed: July 7, 2017
    Publication date: January 11, 2018
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Johan Rothman
  • Publication number: 20170309663
    Abstract: The invention relates to a photodetection device comprising a substrate and a diodes network, the substrate comprising an absorption layer (1) and each diode comprising a collection region with a first type of doping in the absorption layer (2). The device comprises a conduction mesh (7) under the surface of the substrate, comprising at least one conduction channel inserted between the collection regions (2) of two adjacent diodes, the at least one conduction channel (7) having a second doping type opposite the first type and a higher doping density than the absorption layer. The doping density of the at least one conduction channel (7) is derived from metal diffusion in the absorption layer from a metal mesh present on the substrate surface. The absorption layer has the first doping type. The invention also relates to a method of making such a device.
    Type: Application
    Filed: April 19, 2017
    Publication date: October 26, 2017
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Johan ROTHMAN
  • Patent number: 9640701
    Abstract: A method of manufacturing a photodiode including a useful layer made of a semi-conductor alloy. The useful layer has a band gap value which decreases from its upper face to its lower face. A step of producing a first doped region forming a PN junction with a second doped region of the useful layer, said production of a first doped region including a first doping step, so as to produce a base portion; and a second doping step, so as to produce at least one protuberance protruding from the base portion and in the direction of the lower face.
    Type: Grant
    Filed: October 21, 2015
    Date of Patent: May 2, 2017
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Olivier Gravrand, Johan Rothman
  • Patent number: 9406831
    Abstract: A semiconductor structure, and method for manufacturing, of avalanche photodiode type for receiving electromagnetic radiation in a given wavelength range and including a first semiconductor area configured for absorption of the electromagnetic radiation, a second area configured for providing a multiplication of carriers, and a third semiconductor area in contact with the second semiconductor area. The second area includes at least two subparts with the second subpart configured to have a mean carrier multiplication rate that is more substantial than that of the first subpart.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: August 2, 2016
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventor: Johan Rothman
  • Publication number: 20160111580
    Abstract: A method of manufacturing a photodiode including a useful layer made of a semi-conductor alloy. The useful layer has a band gap value which decreases from its upper face to its lower face. A step of producing a first doped region forming a PN junction with a second doped region of the useful layer, said production of a first doped region including a first doping step, so as to produce a base portion; and a second doping step, so as to produce at least one protuberance protruding from the base portion and in the direction of the lower face.
    Type: Application
    Filed: October 21, 2015
    Publication date: April 21, 2016
    Applicant: Commissariat a L'Energie Atomique et aux Energies Alternatives
    Inventors: Olivier GRAVRAND, Johan ROTHMAN
  • Patent number: 9269739
    Abstract: A device includes a substrate carrying an array of diodes, organized in rows and columns, and a peripheral substrate contact is arranged on at least one side of the array. The substrate includes one or more buried conducting lines electrically connected to the peripheral substrate contact and being positioned between at least two neighboring columns of diodes and/or between at least two neighboring rows of diodes.
    Type: Grant
    Filed: November 26, 2012
    Date of Patent: February 23, 2016
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Laurent Mollard, Nicolas Baier, Johan Rothman
  • Patent number: 9236415
    Abstract: The invention relates to a device comprising a substrate supporting a matrix of diodes organized in rows and columns, and a peripheral substrate contact is arranged on at least one side of the matrix, characterized in that the substrate comprises one or several buried conducting lines having no direct electrical connection with the peripheral substrate contact and being positioned between at least two adjacent columns of diodes and between at least two adjacent rows of diodes.
    Type: Grant
    Filed: May 20, 2014
    Date of Patent: January 12, 2016
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Laurent Mollard, Nicolas Baier, Johan Rothman
  • Publication number: 20150340537
    Abstract: A semiconductor structure, and method for manufacturing, of avalanche photodiode type for receiving electromagnetic radiation in a given wavelength range and including a first semiconductor area configured for absorption of the electromagnetic radiation, a second area configured for providing a multiplication of carriers, and a third semiconductor area in contact with the second semiconductor area. The second area includes at least two subparts with the second subpart configured to have a mean carrier multiplication rate that is more substantial than that of the first subpart.
    Type: Application
    Filed: December 27, 2013
    Publication date: November 26, 2015
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventor: Johan ROTHMAN
  • Patent number: 9178101
    Abstract: A device including at least one heterostructure p/n diode, including a substrate based on HgCdTe including for each diode: a first part having a first cadmium concentration; a concentrated part, having a second cadmium concentration, greater than the first concentration, forming a heterostructure with the first part; a p+ doped zone situated in the concentrated part and extending into the first part, forming a p/n junction with an n-doped position of the first part, or a base plate; and the concentrated part is only located in the p+ doped zone and forms a substantially constant cadmium concentration well.
    Type: Grant
    Filed: November 26, 2012
    Date of Patent: November 3, 2015
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Laurent Mollard, Nicolas Baier, Johan Rothman
  • Publication number: 20150303320
    Abstract: A semiconducting structure configured to receive electromagnetic radiation, a method for manufacturing such a structure, and a semiconductor component, the semiconductor structure including: a first semiconducting area of a first type of conductivity, a second semiconducting area of a second type of conductivity opposite to the first type of conductivity, the second area being in contact with the first area to form a semiconducting junction. The second area includes a portion for which a concentration of majority carriers is at least ten times less than a concentration of majority carriers of the first area. The second area and its portion are essentially made in a first cavity configured to focus in the first cavity at least one portion of the electromagnetic radiation.
    Type: Application
    Filed: June 19, 2013
    Publication date: October 22, 2015
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Francois BOULARD, Roch ESPIAU DE LAMAESTRE, David FOWLER, Olivier GRAVRAND, Johan ROTHMAN