Patents by Inventor Johan Rothman
Johan Rothman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11322637Abstract: An avalanche photodiode including an absorption region, a collection region and a multiplication region between the absorption region and the collection region that performs a carrier multiplication by impact ionisation of a single type of carrier. The multiplication region includes a plurality of multilayer structures where each multilayer structure includes, from the absorption region to the collection region, an acceleration layer having a first energy band gap then a multiplication layer having a second energy band gap. The first energy band gap is greater than the second energy band gap.Type: GrantFiled: November 22, 2019Date of Patent: May 3, 2022Assignee: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVESInventor: Johan Rothman
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Patent number: 11119251Abstract: The invention relates to a metasurface lens using a planar array of elementary resonators, each elementary resonator being the shape of a cross the arms of which are of unequal length. The phase shift applied by an elementary resonator is dependent on its orientation in the plane of the lens, the orientation of the various elementary resonators being determined depending on the shape of the desired wavefront. Such a lens has a substantially uniform transmission-coefficient distribution and a low chromatic aberration. Furthermore, it has a very good spectral selectivity.Type: GrantFiled: January 11, 2018Date of Patent: September 14, 2021Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Giacomo Badano, Johan Rothman
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Publication number: 20200168756Abstract: An avalanche photodiode including an absorption region, a collection region and a multiplication region between the absorption region and the collection region that performs a carrier multiplication by impact ionisation of a single type of carrier. The multiplication region includes a plurality of multilayer structures where each multilayer structure includes, from the absorption region to the collection region, an acceleration layer having a first energy band gap then a multiplication layer having a second energy band gap. The first energy band gap is greater than the second energy band gap.Type: ApplicationFiled: November 22, 2019Publication date: May 28, 2020Inventor: Johan Rothman
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Patent number: 10608040Abstract: A photodetection device and a method for manufacturing the device, the device including a substrate and an array of diodes, the substrate including an absorption layer including a first type of doping, and each diode including, in the absorption layer, a collection region including a second type of doping opposite to the first type. The device further includes, under the surface of the substrate, a conductive mesh including at least one conductive channel inserted between the collection regions of two adjacent diodes, the at least one conductive channel including the first type of doping and a higher doping density than the absorption layer. The doping density of the at least one conductive channel is the result of a diffusion of metal in the absorption layer from a metal mesh provided on the surface of the substrate.Type: GrantFiled: November 25, 2016Date of Patent: March 31, 2020Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventor: Johan Rothman
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Patent number: 10566366Abstract: A photodetection device including a diode array and a method for production thereof. In the device, each diode of the array includes an absorption region having a first bandgap energy and a collection region having a first doping type, and adjacent diodes in a network are separated by a trench including sides and a bottom. The bottom and sides of the trench form a stabilization layer having a second doping type, opposite the first doping type, and a bandgap energy greater than the first bandgap energy of the absorption regions.Type: GrantFiled: November 25, 2016Date of Patent: February 18, 2020Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Johan Rothman, Florent Rochette
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Patent number: 10559706Abstract: A structure of the avalanche photodiode type includes a first P doped semiconducting zone, a second multiplication semiconducting zone adapted to supply a multiplication that is preponderant for electrons, a fourth P doped semiconducting “collection” zone. One of the first and second semiconducting zones forms the absorption zone. The structure also includes a third semiconducting zone formed between the second semiconducting zone and the fourth semiconducting zone. The third semiconducting zone has an electric field in operation capable of supplying an acceleration of electrons between the second semiconducting zone and the fourth semiconducting zone without multiplication of carriers by impact ionisation.Type: GrantFiled: July 7, 2017Date of Patent: February 11, 2020Assignee: COMMISSARIAT A L'ENERGIE ET AUX ENERGIES ALTERNATIVESInventor: Johan Rothman
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Patent number: 10546886Abstract: The invention relates to a photodetection device comprising a substrate and a diodes network, the substrate comprising an absorption layer and each diode comprising a collection region with a first type of doping in the absorption layer. The device comprises a conduction mesh under the surface of the substrate, comprising at least one conduction channel inserted between the collection regions of two adjacent diodes, the at least one conduction channel having a second doping type opposite the first type and a higher doping density than the absorption layer. The doping density of the at least one conduction channel is derived from metal diffusion in the absorption layer from a metal mesh present on the substrate surface. The absorption layer has the first doping type. The invention also relates to a method of making such a device.Type: GrantFiled: April 19, 2017Date of Patent: January 28, 2020Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventor: Johan Rothman
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Publication number: 20190383969Abstract: The invention relates to a metasurface lens using a planar array of elementary resonators, each elementary resonator being the shape of a cross the arms of which are of unequal length. The phase shift applied by an elementary resonator is dependent on its orientation in the plane of the lens, the orientation of the various elementary resonators being determined depending on the shape of the desired wavefront. Such a lens has a substantially uniform transmission-coefficient distribution and a low chromatic aberration. Furthermore, it has a very good spectral selectivity.Type: ApplicationFiled: January 11, 2018Publication date: December 19, 2019Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Giacomo BADANO, Johan ROTHMAN
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Publication number: 20180374881Abstract: A photodetection device including a diode array and a method for production thereof. In the device, each diode of the array includes an absorption region having a first bandgap energy and a collection region having a first doping type, and adjacent diodes in a network are separated by a trench including sides and a bottom. The bottom and sides of the trench form a stabilization layer having a second doping type, opposite the first doping type, and a bandgap energy greater than the first bandgap energy of the absorption regions.Type: ApplicationFiled: November 25, 2016Publication date: December 27, 2018Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Johan ROTHMAN, Florent ROCHETTE
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Publication number: 20180337210Abstract: A photodetection device and a method for manufacturing the device, the device including a substrate and an array of diodes, the substrate including an absorption layer including a first type of doping, and each diode including, in the absorption layer, a collection region including a second type of doping opposite to the first type. The device further includes, under the surface of the substrate, a conductive mesh including at least one conductive channel inserted between the collection regions of two adjacent diodes, the at least one conductive channel including the first type of doping and a higher doping density than the absorption layer. The doping density of the at least one conductive channel is the result of a diffusion of metal in the absorption layer from a metal mesh provided on the surface of the substrate.Type: ApplicationFiled: November 25, 2016Publication date: November 22, 2018Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventor: Johan ROTHMAN
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Patent number: 10128386Abstract: A semiconducting structure configured to receive electromagnetic radiation, a method for manufacturing such a structure, and a semiconductor component, the semiconductor structure including: a first semiconducting area of a first type of conductivity, a second semiconducting area of a second type of conductivity opposite to the first type of conductivity, the second area being in contact with the first area to form a semiconducting junction. The second area includes a portion for which a concentration of majority carriers is at least ten times less than a concentration of majority carriers of the first area. The second area and its portion are essentially made in a first cavity configured to focus in the first cavity at least one portion of the electromagnetic radiation.Type: GrantFiled: June 19, 2013Date of Patent: November 13, 2018Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventors: Francois Boulard, Roch Espiau De Lamaestre, David Fowler, Olivier Gravrand, Johan Rothman
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Publication number: 20180013030Abstract: A structure of the avalanche photodiode type includes a first P doped semiconducting zone, a second multiplication semiconducting zone adapted to supply a multiplication that is preponderant for electrons, a fourth P doped semiconducting “collection” zone. One of the first and second semiconducting zones forms the absorption zone. The structure also includes a third semiconducting zone formed between the second semiconducting zone and the fourth semiconducting zone. The third semiconducting zone has an electric field in operation capable of supplying an acceleration of electrons between the second semiconducting zone and the fourth semiconducting zone without multiplication of carriers by impact ionisation.Type: ApplicationFiled: July 7, 2017Publication date: January 11, 2018Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventor: Johan Rothman
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Publication number: 20170309663Abstract: The invention relates to a photodetection device comprising a substrate and a diodes network, the substrate comprising an absorption layer (1) and each diode comprising a collection region with a first type of doping in the absorption layer (2). The device comprises a conduction mesh (7) under the surface of the substrate, comprising at least one conduction channel inserted between the collection regions (2) of two adjacent diodes, the at least one conduction channel (7) having a second doping type opposite the first type and a higher doping density than the absorption layer. The doping density of the at least one conduction channel (7) is derived from metal diffusion in the absorption layer from a metal mesh present on the substrate surface. The absorption layer has the first doping type. The invention also relates to a method of making such a device.Type: ApplicationFiled: April 19, 2017Publication date: October 26, 2017Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventor: Johan ROTHMAN
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Patent number: 9640701Abstract: A method of manufacturing a photodiode including a useful layer made of a semi-conductor alloy. The useful layer has a band gap value which decreases from its upper face to its lower face. A step of producing a first doped region forming a PN junction with a second doped region of the useful layer, said production of a first doped region including a first doping step, so as to produce a base portion; and a second doping step, so as to produce at least one protuberance protruding from the base portion and in the direction of the lower face.Type: GrantFiled: October 21, 2015Date of Patent: May 2, 2017Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventors: Olivier Gravrand, Johan Rothman
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Patent number: 9406831Abstract: A semiconductor structure, and method for manufacturing, of avalanche photodiode type for receiving electromagnetic radiation in a given wavelength range and including a first semiconductor area configured for absorption of the electromagnetic radiation, a second area configured for providing a multiplication of carriers, and a third semiconductor area in contact with the second semiconductor area. The second area includes at least two subparts with the second subpart configured to have a mean carrier multiplication rate that is more substantial than that of the first subpart.Type: GrantFiled: December 27, 2013Date of Patent: August 2, 2016Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventor: Johan Rothman
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Publication number: 20160111580Abstract: A method of manufacturing a photodiode including a useful layer made of a semi-conductor alloy. The useful layer has a band gap value which decreases from its upper face to its lower face. A step of producing a first doped region forming a PN junction with a second doped region of the useful layer, said production of a first doped region including a first doping step, so as to produce a base portion; and a second doping step, so as to produce at least one protuberance protruding from the base portion and in the direction of the lower face.Type: ApplicationFiled: October 21, 2015Publication date: April 21, 2016Applicant: Commissariat a L'Energie Atomique et aux Energies AlternativesInventors: Olivier GRAVRAND, Johan ROTHMAN
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Patent number: 9269739Abstract: A device includes a substrate carrying an array of diodes, organized in rows and columns, and a peripheral substrate contact is arranged on at least one side of the array. The substrate includes one or more buried conducting lines electrically connected to the peripheral substrate contact and being positioned between at least two neighboring columns of diodes and/or between at least two neighboring rows of diodes.Type: GrantFiled: November 26, 2012Date of Patent: February 23, 2016Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventors: Laurent Mollard, Nicolas Baier, Johan Rothman
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Patent number: 9236415Abstract: The invention relates to a device comprising a substrate supporting a matrix of diodes organized in rows and columns, and a peripheral substrate contact is arranged on at least one side of the matrix, characterized in that the substrate comprises one or several buried conducting lines having no direct electrical connection with the peripheral substrate contact and being positioned between at least two adjacent columns of diodes and between at least two adjacent rows of diodes.Type: GrantFiled: May 20, 2014Date of Patent: January 12, 2016Assignee: Commissariat a l'energie atomique et aux energies alternativesInventors: Laurent Mollard, Nicolas Baier, Johan Rothman
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Publication number: 20150340537Abstract: A semiconductor structure, and method for manufacturing, of avalanche photodiode type for receiving electromagnetic radiation in a given wavelength range and including a first semiconductor area configured for absorption of the electromagnetic radiation, a second area configured for providing a multiplication of carriers, and a third semiconductor area in contact with the second semiconductor area. The second area includes at least two subparts with the second subpart configured to have a mean carrier multiplication rate that is more substantial than that of the first subpart.Type: ApplicationFiled: December 27, 2013Publication date: November 26, 2015Applicant: Commissariat a l'energie atomique et aux energies alternativesInventor: Johan ROTHMAN
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Patent number: 9178101Abstract: A device including at least one heterostructure p/n diode, including a substrate based on HgCdTe including for each diode: a first part having a first cadmium concentration; a concentrated part, having a second cadmium concentration, greater than the first concentration, forming a heterostructure with the first part; a p+ doped zone situated in the concentrated part and extending into the first part, forming a p/n junction with an n-doped position of the first part, or a base plate; and the concentrated part is only located in the p+ doped zone and forms a substantially constant cadmium concentration well.Type: GrantFiled: November 26, 2012Date of Patent: November 3, 2015Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventors: Laurent Mollard, Nicolas Baier, Johan Rothman