Abstract: Circuits, structures and techniques for independently connecting a surrounding material in a part of a semiconductor device to a contact of its respective device. To achieve this, a combination of one or more conductive wells that are electrically isolated in at least one bias polarity are provided.

Abstract: Circuits, structures and techniques for independently connecting a surrounding material in a part of a semiconductor device to a contact of its respective device. To achieve this, a combination of one or more conductive wells that are electrically isolated in at least one bias polarity are provided.

Abstract: Circuits, structures and techniques for independently connecting a surrounding material in a part of a semiconductor device to a contact of its respective device. To achieve this, a combination of one or more conductive wells that are electrically isolated in at least one bias polarity are provided.

Abstract: A high efficiency voltage mode class D amplifier and energy transfer system is provided. The amplifier and system includes a pair of transistors connected in series between a voltage source and a ground connection. Further, a ramp current tank circuit is coupled in parallel with one of the pair of transistors and a resonant tuned load circuit is coupled to the ramp current tank circuit. The ramp current tank circuit can include an inductor that absorbs an output capacitance COSS of the pair of transistors and a capacitor the provides DC blocking.

Abstract: An electrical circuit arranged in a half bridge topology. The electrical circuit includes a high side transistor; a low side transistor; a gate driver and level shifter electrically coupled to a gate of the high side transistor; a gate driver electrically coupled to a gate of the low side transistor; a capacitor electrically coupled in parallel with the gate driver and level shifter; a voltage source electrically coupled to an input of the gate driver and level shifter and an input of the gate driver; and, a bootstrap transistor electrically coupled between the voltage source and the capacitor. A GaN field-effect transistor is synchronously switched with a low side device of the half bridge circuit.

Abstract: A high efficiency voltage mode class D amplifier and energy transfer system is provided. The amplifier and system includes a pair of transistors connected in series between a voltage source and a ground connection. Further, a ramp current tank circuit is coupled in parallel with one of the pair of transistors and a resonant tuned load circuit is coupled to the ramp current tank circuit. The ramp current tank circuit can include an inductor that absorbs an output capacitance COSS of the pair of transistors and a capacitor the provides DC blocking.

Abstract: A high efficiency voltage mode class D amplifier and energy transfer system is provided. The amplifier and system includes a pair of transistors connected in series between a voltage source and a ground connection. Further, a ramp current tank circuit is coupled in parallel with one of the pair of transistors and a resonant tuned load circuit is coupled to the ramp current tank circuit. The ramp current tank circuit can include an inductor that absorbs an output capacitance COSS of the pair of transistors and a capacitor the provides DC blocking.

Abstract: An electrical circuit arranged in a half bridge topology. The electrical circuit includes a high side transistor; a low side transistor; a gate driver and level shifter electrically coupled to a gate of the high side transistor; a gate driver electrically coupled to a gate of the low side transistor; a capacitor electrically coupled in parallel with the gate driver and level shifter; a voltage source electrically coupled to an input of the gate driver and level shifter and an input of the gate driver; and, a bootstrap transistor electrically coupled between the voltage source and the capacitor. A GaN field-effect transistor is synchronously switched with a low side device of the half bridge circuit.

Abstract: Circuits, structures and techniques for independently connecting a surrounding material in a part of a semiconductor device to a contact of its respective device. To achieve this, a combination of one or more conductive wells that are electrically isolated in at least one bias polarity are provided.

Abstract: An electrical circuit arranged in a half bridge topology. The electrical circuit includes a high side transistor; a low side transistor; a gate driver and level shifter electrically coupled to a gate of the high side transistor; a gate driver electrically coupled to a gate of the low side transistor; a capacitor electrically coupled in parallel with the gate driver and level shifter; a voltage source electrically coupled to an input of the gate driver and level shifter and an input of the gate driver; and, a bootstrap transistor electrically coupled between the voltage source and the capacitor. A GaN field-effect transistor is synchronously switched with a low side device of the half bridge circuit.

Abstract: A circuit and technique are provided to control bias setting to an FET based common source RF amplifier that can operate with large signals present. The circuit and technique described herein use a second FET in an identical circuit having the gate circuits connected in parallel and being sourced by the same drain voltage that serves as a reference to a first circuit bias setting. The drain current in a first FET will include both the bias and RF amplification current, whereas the second FET only carries the bias current. Because the devices and circuits are matched, the gate voltage variations will appear in both FETs thereby providing regulation of the drain current.

Abstract: An electrical circuit arranged in a half bridge topology. The electrical circuit includes a high side transistor; a low side transistor; a gate driver and level shifter electrically coupled to a gate of the high side transistor; a gate driver electrically coupled to a gate of the low side transistor; a capacitor electrically coupled in parallel with the gate driver and level shifter; a voltage source electrically coupled to an input of the gate driver and level shifter and an input of the gate driver; and, a bootstrap transistor electrically coupled between the voltage source and the capacitor. A GaN field-effect transistor is synchronously switched with a low side device of the half bridge circuit.

Abstract: A high efficiency voltage mode class D amplifier and energy transfer system is provided. The amplifier and system includes a pair of transistors connected in series between a voltage source and a ground connection. Further, a ramp current tank circuit is coupled in parallel with one of the pair of transistors and a resonant tuned load circuit is coupled to the ramp current tank circuit. The ramp current tank circuit can include an inductor that absorbs an output capacitance COSS of the pair of transistors and a capacitor the provides DC blocking.

Abstract: A circuit and technique are provided to control bias setting to an FET based common source RF amplifier that can operate with large signals present. The circuit and technique described herein use a second FET in an identical circuit having the gate circuits connected in parallel and being sourced by the same drain voltage that serves as a reference to a first circuit bias setting. The drain current in a first FET will include both the bias and RF amplification current, whereas the second FET only carries the bias current. Because the devices and circuits are matched, the gate voltage variations will appear in both FETs thereby providing regulation of the drain current.