Abstract: A display system includes a first die configured to emit light of a first color, a second die configured to emit light of a second color and a third die configured to emit light of a third color. The display system also includes a lens system and an optical waveguide system. The optical waveguide system includes a first grating portion configured to couple in an incident light to the optical waveguide and a second grating portion configured to couple out a transmitting light from the optical waveguide. The first die, the second die and the third die are contained in one package. The lens system is arranged between the package and the optical waveguide system, and is configured to collimate the light of the first color, the light of the second color and the light of the third color onto the first grating portion of the optical waveguide system.

Abstract: A method is provided to produce dies for a wafer reconstitution. The method comprises steps of inspecting an epitaxial wafer to detect one or more defects, overlaying a dicing scheme on the epitaxial wafer with the detected defects, classifying the dies in the dicing scheme as good dies or bad dies, and dicing the good dies and transferring the good dies onto a carrier wafer or a target wafer to wafer reconstitution.

Abstract: The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve silicon-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce a silicon-to-metal interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a layer of a metal on a silicon or polysilicon surface of the substrate to form a metal silicide in an integrated system is provided.

Abstract: The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve silicon-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce a silicon-to-metal interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a layer of a metal on a silicon or polysilicon surface of the substrate to form a metal silicide in an integrated system is provided.