Patents by Inventor Johanes F. Swenberg

Johanes F. Swenberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9012336
    Abstract: Disclosed are apparatus and methods for processing a substrate. The substrate having a feature with a layer thereon is exposed to an inductively coupled plasma which forms a substantially conformal layer.
    Type: Grant
    Filed: April 8, 2013
    Date of Patent: April 21, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Heng Pan, Matthew Scott Rogers, Johanes F. Swenberg, Christopher S. Olsen, Wei Liu, David Chu, Malcom J. Bevan
  • Patent number: 8999106
    Abstract: The present invention generally provides methods and apparatus for controlling edge performance during process. One embodiment of the present invention provides an apparatus comprising a chamber body defining a process volume, a gas inlet configured to flow a process gas into the process volume, and a supporting pedestal disposed in the process volume. The supporting pedestal comprises a top plate having a substrate supporting surface configured to receive and support the substrate on a backside, and an edge surface configured to circumscribe the substrate along an outer edge of the substrate, and a height difference between a top surface of the substrate and the edge surface is used to control exposure of an edge region of the substrate to the process gas.
    Type: Grant
    Filed: December 19, 2007
    Date of Patent: April 7, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Wei Liu, Johanes F. Swenberg, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini, Michael J. Mark
  • Publication number: 20140302686
    Abstract: Disclosed are apparatus and methods for processing a substrate. The substrate having a feature with a layer thereon is exposed to an inductively coupled plasma which forms a substantially conformal layer.
    Type: Application
    Filed: April 8, 2013
    Publication date: October 9, 2014
    Inventors: Heng Pan, Matthew Scott Rogers, Johanes F. Swenberg, Christopher S. Olsen, Wei Liu, David Chu, Malcolm J. Bevan
  • Publication number: 20140273530
    Abstract: Provided are methods post deposition treatment of films comprising SiN. Certain methods pertain to providing a film comprising SiN; and exposing the film to an inductively coupled plasma, capacitively coupled plasma or a microwave plasma to provide a treated film with a modulated film stress and/or wet etch rate in dilute HF. Certain other methods comprise depositing a PEALD SiN film followed by exposure to a plasma nitridation process or a UV treatment to provide a treated film.
    Type: Application
    Filed: March 14, 2014
    Publication date: September 18, 2014
    Inventors: Victor Nguyen, Isabelita Roflox, Mihaela Balseanu, Li-Qun Xia, Heng Pan, Wei Liu, Malcolm J. Bevan, Christopher S. Olsen, Johanes F. Swenberg
  • Patent number: 8435906
    Abstract: Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, plasma oxidation is used to form a conformal oxide layer by controlling the temperature of the semiconductor substrate at below about 100° C. Methods for controlling the temperature of the semiconductor substrate according to one or more embodiments include utilizing an electrostatic chuck and a coolant and gas convection.
    Type: Grant
    Filed: January 22, 2010
    Date of Patent: May 7, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Agus S. Tjandra, Christopher S. Olsen, Johanes F. Swenberg, Yoshitaka Yokota
  • Patent number: 8062472
    Abstract: The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus comprises a chamber body defining a process volume configured to process the substrate therein, and a coil assembly coupled to the chamber body outside the process volume, wherein the coil assembly comprises a coil mounting plate, a first coil antenna mounted on the coil mounting plate, and a coil adjusting mechanism configured to adjust the alignment of the first coil antenna relative to the process volume.
    Type: Grant
    Filed: December 19, 2007
    Date of Patent: November 22, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Wei Liu, Johanes F. Swenberg, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini
  • Publication number: 20110061812
    Abstract: Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
    Type: Application
    Filed: March 10, 2010
    Publication date: March 17, 2011
    Applicant: Applied Materials, Inc.
    Inventors: Udayan Ganguly, Yoshitaka Yokota, Christopher S. Olsen, Matthew D. Scotney-Castle, Vicky Nguyen, Swaminathan Srinivasan, Wei Liu, Johanes F. Swenberg, Jose A. Marin, Aijit Balakrishna, Jacob Newman, Stephen C. Hickerson
  • Publication number: 20110061810
    Abstract: Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
    Type: Application
    Filed: March 10, 2010
    Publication date: March 17, 2011
    Applicant: Applied Materials, Inc.
    Inventors: Udayan Ganguly, Joseph M. Ranish, Aaron M. Hunter, Jing Tang, Christopher S. Olsen, Matthew D. Scotney-Castle, Vicky Nguyen, Swaminathan Srinivasan, Johanes F. Swenberg, Anchuan Wang, Nitin K. Ingle, Manish Hemkar, Jose A. Marin
  • Publication number: 20110065276
    Abstract: Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
    Type: Application
    Filed: March 10, 2010
    Publication date: March 17, 2011
    Applicant: Applied Materials, Inc.
    Inventors: Udayan Ganguly, Joseph M. Ranish, Aaron M. Hunter, Jing Tang, Christopher S. Olsen, Matthew D. Scotney-Castle, Vicky Nguyen, Swaminathan Srinivasan, Wei Liu, Johanes F. Swenberg, Shiyu Sun
  • Publication number: 20100216317
    Abstract: Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, plasma oxidation is used to form a conformal oxide layer by controlling the temperature of the semiconductor substrate at below about 100° C. Methods for controlling the temperature of the semiconductor substrate according to one or more embodiments include utilizing an electrostatic chuck and a coolant and gas convection.
    Type: Application
    Filed: January 22, 2010
    Publication date: August 26, 2010
    Applicant: Applied Materials, Inc.
    Inventors: Agus S. Tjandra, Christopher S. Olsen, Johanes F. Swenberg, Yoshitaka Yokota
  • Publication number: 20090159425
    Abstract: The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus comprises a chamber body defining a process volume configured to process the substrate therein, and a coil assembly coupled to the chamber body outside the process volume, wherein the coil assembly comprises a coil mounting plate, a first coil antenna mounted on the coil mounting plate, and a coil adjusting mechanism configured to adjust the alignment of the first coil antenna relative to the process volume.
    Type: Application
    Filed: December 19, 2007
    Publication date: June 25, 2009
    Inventors: Wei Liu, Johanes F. Swenberg, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini
  • Publication number: 20090162570
    Abstract: The present invention generally provides apparatus and methods for processing a semiconductor substrate. Particularly, the present invention provides an inductively coupled plasma reactor having improved process uniformity. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a process volume configured to process the substrate therein, an adjustable coil assembly coupled to the chamber body outside the process volume, a supporting pedestal disposed in the process volume and configured to support the substrate therein, and a gas injection assembly configured to supply a process gas towards a first process zone and a second process zone independently.
    Type: Application
    Filed: December 19, 2007
    Publication date: June 25, 2009
    Inventors: Johanes F. Swenberg, Wei Liu, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini, Michael J. Mark, Theresa Kramer Guarini, Woong Choi
  • Publication number: 20090162952
    Abstract: The present invention generally provides methods and apparatus for controlling edge performance during process. One embodiment of the present invention provides an apparatus comprising a chamber body defining a process volume, a gas inlet configured to flow a process gas into the process volume, and a supporting pedestal disposed in the process volume. The supporting pedestal comprises a top plate having a substrate supporting surface configured to receive and support the substrate on a backside, and an edge surface configured to circumscribe the substrate along an outer edge of the substrate, and a height difference between a top surface of the substrate and the edge surface is used to control exposure of an edge region of the substrate to the process gas.
    Type: Application
    Filed: December 19, 2007
    Publication date: June 25, 2009
    Inventors: Wei Liu, Johanes F. Swenberg, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini, Michael J. Mark