Abstract: A method of backside processing of a transistor structure includes performing a substrate trench etch process to form a trench within a substrate and leave a portion of the substrate below a bottom of the trench un-etched, wherein the trench is aligned with a gate of the transistor structure, performing a nitridation process to nitride an inner surface of the trench to form a nitride layer at the inner surface, and after forming the nitride layer, performing a dielectric fill process to form a dielectric layer within the trench.

Abstract: A method of forming a semiconductor structure includes annealing a surface of a substrate in an ambient of hydrogen to smooth the surface, pre-cleaning the surface of the substrate, depositing a high-? dielectric layer on the pre-cleaned surface of the substrate, performing a re-oxidation process to thermally oxidize the surface of the substrate; performing a plasma nitridation process to insert nitrogen atoms in the deposited high-? dielectric layer, and performing a post-nitridation anneal process to passivate chemical bonds in the plasma nitridated high-? dielectric layer.

Abstract: A method of forming a semiconductor structure includes pre-cleaning a surface of a substrate, forming an interfacial layer on the pre-cleaned surface of the substrate, depositing a high-? dielectric layer on the interfacial layer, performing a plasma nitridation process to insert nitrogen atoms in the deposited high-? dielectric layer, and performing a post-nitridation anneal process to passivate chemical bonds in the plasma nitridated high-? dielectric layer.

Abstract: A method of forming a semiconductor structure includes performing a first deposition process to deposit a first high-K dielectric layer on a surface of a substrate, performing an interface formation process to form an interfacial layer on the surface of the substrate, performing a second deposition process to deposit a second high-K dielectric layer on the interfacial layer, performing a plasma nitridation process to insert nitrogen atoms in the first high-K dielectric layer and the second high-K dielectric layer, and performing an anneal process to passivate chemical bonds in the first high-K dielectric layer and the second high-K dielectric layer.

Abstract: A method of forming a semiconductor structure includes performing a pre-treatment process, including annealing a surface of a substrate in a hydrogen (H2) ambient, performing an interfacial formation process, including thermally oxidizing the pre-treated surface of the substrate to form an interfacial layer, and performing a post-treatment process, including annealing a surface of the formed interfacial layer in an ammonia (NH3) ambient.

Abstract: Described is a method of manufacturing a gate-all-around electronic device. The method includes forming a thermal oxide layer though an enhanced in situ steam generation process in combination with atomic layer deposition of a low-? layer. The thin thermal oxide layer passivates the interface between the silicon layer and the dielectric layer of the GAA. A passivation process after the deposition of the low-? layer reduces the bulk trap and enhances the breakdown performance of the GAA transistor.

Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.

Abstract: Described is a method of manufacturing a gate-all-around electronic device. The method includes forming a thermal oxide layer though an enhanced in situ steam generation process in combination with atomic layer deposition of a low-? layer. The thin thermal oxide layer passivates the interface between the silicon layer and the dielectric layer of the GAA. A passivation process after the deposition of the low-? layer reduces the bulk trap and enhances the breakdown performance of the GAA transistor.

Abstract: Processing methods may be performed to produce semiconductor structures. The methods may include forming a silicon layer over a semiconductor substrate. The forming may include forming a silicon layer incorporating a dopant. The methods may include oxidizing a portion of the silicon layer while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The oxidizing may drive a portion of the dopant through the silicon layer and into the semiconductor substrate.

Abstract: Described is a method of manufacturing a gate-all-around electronic device. The method includes forming a thermal oxide layer though an enhanced in situ steam generation process in combination with atomic layer deposition of a low-? layer. The thin thermal oxide layer passivates the interface between the silicon layer and the dielectric layer of the GAA. A passivation process after the deposition of the low-? layer reduces the bulk trap and enhances the breakdown performance of the GAA transistor.

Abstract: Embodiments described herein generally relate to conformal oxidation processes for flash memory devices. In conventional oxidation processes for gate structures, growth rates have become too fast, ultimately creating non-conformal films. To create a preferred growth rate for SiO2 on SiNx films, embodiments in this disclosure use a thermal combustion of a ternary mixture of H2+O2+N2O to gain SiO2 out of Si containing compounds. Using this mixture provides a lower growth in comparison with using only H2 and O2, resulting in a lower sticking coefficient. The lower sticking coefficient allows an optimal amount of atoms to reach the bottom of the gate, improving the conformality in 3D NAND SiO2 oxidation layers, specifically for ONO replacement tunneling gate formation.

Abstract: Processing methods may be performed to produce semiconductor structures. The methods may include forming a silicon layer over a semiconductor substrate. The forming may include forming a silicon layer incorporating a dopant. The methods may include oxidizing a portion of the silicon layer while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The oxidizing may drive a portion of the dopant through the silicon layer and into the semiconductor substrate.

Abstract: A method of forming an electronic device is disclosed. The method comprises forming a barrier layer on a silicon layer, and depositing a silicon oxide layer on the barrier layer. The formation of the barrier layer on the silicon layer minimizes parasitic oxidation of the underlying silicon layer and minimizes defects in the silicon layer.

Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.

Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.

Abstract: A method of forming a semiconductor structure includes annealing a surface of a substrate in an ambient of hydrogen to smooth the surface, pre-cleaning the surface of the substrate, depositing a high-? dielectric layer on the pre-cleaned surface of the substrate, performing a re-oxidation process to thermally oxidize the surface of the substrate; performing a plasma nitridation process to insert nitrogen atoms in the deposited high-? dielectric layer, and performing a post-nitridation anneal process to passivate chemical bonds in the plasma nitridated high-? dielectric layer.

Abstract: Described is a method of manufacturing a gate-all-around electronic device. The method includes forming a thermal oxide layer though an enhanced in situ steam generation process in combination with atomic layer deposition of a low-? layer. The thin thermal oxide layer passivates the interface between the silicon layer and the dielectric layer of the GAA. A passivation process after the deposition of the low-? layer reduces the bulk trap and enhances the breakdown performance of the GAA transistor.

Abstract: A method of forming an electronic device is disclosed. The method comprises forming a barrier layer on a silicon layer, and depositing a silicon oxide layer on the barrier layer. The formation of the barrier layer on the silicon layer minimizes parasitic oxidation of the underlying silicon layer and minimizes defects in the silicon layer.

Abstract: Embodiments described herein generally relate to conformal oxidation processes for flash memory devices. In conventional oxidation processes for gate structures, growth rates have become too fast, ultimately creating non-conformal films. To create a preferred growth rate for SiO2 on SiNx films, embodiments in this disclosure use a thermal combustion of a ternary mixture of H2+O2+N2O to gain SiO2 out of Si containing compounds. Using this mixture provides a lower growth in comparison with using only H2 and O2, resulting in a lower sticking coefficient. The lower sticking coefficient allows an optimal amount of atoms to reach the bottom of the gate, improving the conformality in 3D NAND SiO2 oxidation layers, specifically for ONO replacement tunneling gate formation.

Abstract: A method of forming a silicon cap which comprises substantially no germanium atoms nor oxygen atoms is disclosed. Methods for controlling the oxidation of a silicon cap layer are also disclosed. Methods of forming a metal gate replacement which utilize the disclosed silicon cap and controlled oxidation are also disclosed.