Patents by Inventor Johanes S. Swenberg

Johanes S. Swenberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10971357
    Abstract: A method of modifying a layer in a semiconductor device is provided. The method includes depositing a low quality film on a semiconductor substrate, and exposing a surface of the low quality film to a first process gas comprising helium while the substrate is heated to a first temperature, and exposing a surface of the low quality film to a second process gas comprising oxygen gas while the substrate is heated to a second temperature that is different than the first temperature. The electrical properties of the film are improved by undergoing the aforementioned processes.
    Type: Grant
    Filed: October 4, 2018
    Date of Patent: April 6, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Wei Liu, Theresa Kramer Guarini, Linlin Wang, Malcolm Bevan, Johanes S. Swenberg, Vladimir Nagorny, Bernard L. Hwang, Kin Pong Lo, Lara Hawrylchak, Rene George
  • Publication number: 20200251331
    Abstract: Methods for conformal radical oxidation of structures are provided. The method comprises positioning a substrate in a processing region of a processing chamber. The method further comprises flowing hydrogen gas into a precursor activator at a first flow rate, wherein the precursor activator is fluidly coupled with the processing region. The method further comprises flowing oxygen gas into the precursor activator at a second flow rate. The method further comprises flowing argon gas into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the hydrogen gas, oxygen gas, and argon gas. The method further comprises flowing the plasma into the processing region. The method further comprises exposing the substrate to the plasma to form an oxide film on the substrate, wherein a growth rate of the oxide film is controlled by adjusting the third flow rate.
    Type: Application
    Filed: April 15, 2020
    Publication date: August 6, 2020
    Inventors: Hansel LO, Christopher S. OLSEN, Eric Kihara SHONO, Johanes S. SWENBERG, Erika HANSEN, Taewan KIM, Lara HAWRYLCHAK
  • Publication number: 20200194251
    Abstract: Embodiments described herein generally relate to conformal oxidation processes for flash memory devices. In conventional oxidation processes for gate structures, growth rates have become too fast, ultimately creating non-conformal films. To create a preferred growth rate for SiO2 on SiNx films, embodiments in this disclosure use a thermal combustion of a ternary mixture of H2+O2+N2O to gain SiO2 out of Si containing compounds. Using this mixture provides a lower growth in comparison with using only H2 and O2, resulting in a lower sticking coefficient. The lower sticking coefficient allows an optimal amount of atoms to reach the bottom of the gate, improving the conformality in 3D NAND SiO2 oxidation layers, specifically for ONO replacement tunneling gate formation.
    Type: Application
    Filed: October 22, 2019
    Publication date: June 18, 2020
    Inventors: Johanes F. SWENBERG, Taewan KIM, Christopher S. OLSEN, Erika HANSEN
  • Patent number: 10636650
    Abstract: Methods for conformal radical oxidation of structures are provided. In one implementation, the method comprises flowing hydrogen into a processing chamber at a first flow rate, wherein the processing chamber has a substrate positioned therein. The method further comprises flowing oxygen into a precursor activator at a second flow rate. The method further comprises flowing argon into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the oxygen and argon. The method further comprises flowing the plasma into the processing chamber, wherein the plasma mixes with the hydrogen gas to create an activated processing gas. The method further comprises exposing the substrate to the activated gas to form an oxide film on the substrate. A growth rate of the oxide film is controlled by adjusting the third flow rate.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: April 28, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Hansel Lo, Christopher S. Olsen, Eric Kihara Shono, Johanes S. Swenberg, Erika Hansen, Taewan Kim, Lara Hawrylchak
  • Publication number: 20200111659
    Abstract: A method of modifying a layer in a semiconductor device is provided. The method includes depositing a low quality film on a semiconductor substrate, and exposing a surface of the low quality film to a first process gas comprising helium while the substrate is heated to a first temperature, and exposing a surface of the low quality film to a second process gas comprising oxygen gas while the substrate is heated to a second temperature that is different than the first temperature. The electrical properties of the film are improved by undergoing the aforementioned processes.
    Type: Application
    Filed: October 4, 2018
    Publication date: April 9, 2020
    Inventors: Wei LIU, Theresa Kramer GUARINI, Linlin WANG, Malcolm BEVAN, Johanes S. SWENBERG, Vladimir NAGORNY, Bernard L. HWANG, Kin Pong LO, Lara HAWRYLCHAK, Rene GEORGE
  • Patent number: 10580643
    Abstract: Embodiments of the present disclosure generally relate to methods for forming a high-k gate dielectric in a transistor. The high-k gate dielectric may be formed by introducing a fluorine containing gas into a processing chamber during the deposition of the high-k gate dielectric in the processing chamber. In one embodiment, the high-k gate dielectric is formed by an ALD process in a processing chamber, and a fluorine containing gas is introduced into the processing chamber during one or more stages of the ALD process. Fluorine ions, molecules or radicals from the fluorine containing gas (may be activated by a plasma) can fill the oxygen vacancies in the high-k dielectric.
    Type: Grant
    Filed: January 23, 2017
    Date of Patent: March 3, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Johanes S. Swenberg, Linlin Wang, Wei Liu
  • Patent number: 10510545
    Abstract: Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process, or a single-step plasma hydrogenation and nitridization process, is performed on a metal nitride layer in a film stack, thereby, according to some embodiments, removing oxygen atoms disposed within layers of the film stack and, in some embodiments, adding nitrogen atoms to the layers of the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift.
    Type: Grant
    Filed: January 9, 2019
    Date of Patent: December 17, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Houda Graoui, Johanes S. Swenberg, Wei Liu, Steven C. H. Hung
  • Patent number: 10504779
    Abstract: Embodiments described herein generally relate to a sequential hydrogenation and nitridization process for reducing interfacial and bulk O atoms in a conductive structure in a semiconductor device. A hydrogenation and plasma nitridization process is performed on a metal nitride layer in a conductive structure prior to deposition of a second metal layer, thereby reducing interfacial oxygen atoms formed on a surface of the metal nitride and oxygen atoms present in the bulk metal layers of the conductive structure. As a result, adhesion of the second metal layer to the metal nitride layer is improved and the electrical resistance of the contact structure is reduced.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: December 10, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Johanes S. Swenberg, Wei Liu, Houda Graoui, Shashank Sharma, Shankar Muthukrishnan, Rene George
  • Patent number: 10431466
    Abstract: Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process is performed on a metal nitride layer in a film stack, thereby removing oxygen atoms disposed within layers of the film stack and, in some embodiments eliminating an oxygen-containing interfacial layer disposed within the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift. Further, the metal gate structure operates with an increased leakage current that is as little as one quarter the increase in leakage current associated with a similar metal gate structure formed via conventional techniques.
    Type: Grant
    Filed: October 12, 2018
    Date of Patent: October 1, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Johanes S. Swenberg, Wei Liu, Houda Graoui, Steven C. H. Hung
  • Publication number: 20190287805
    Abstract: A sequential plasma process is employed to enable the modification of the work function of a p-type metal layer in a metal gate structure. The sequential plasma process includes a plasma hydrogenation and a plasma process that includes electronegative species. The sequential plasma process is performed on a p-type metal layer in a film stack, thereby replacing suboxides and/or other non-stoichiometrically combined electronegative atoms disposed on or within layers of the film stack with stoichiometrically combined electronegative atoms, such as O atoms. As a result, the work function of the p-type metal layer can be modified without changing a thickness of the p-type metal layer.
    Type: Application
    Filed: May 24, 2019
    Publication date: September 19, 2019
    Inventors: Steven C. H. HUNG, Johanes S. SWENBERG, Wei LIU, Houda GRAOUI
  • Publication number: 20190221427
    Abstract: Methods for conformal radical oxidation of structures are provided. In one implementation, the method comprises flowing hydrogen into a processing chamber at a first flow rate, wherein the processing chamber has a substrate positioned therein. The method further comprises flowing oxygen into a precursor activator at a second flow rate. The method further comprises flowing argon into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the oxygen and argon. The method further comprises flowing the plasma into the processing chamber, wherein the plasma mixes with the hydrogen gas to create an activated processing gas. The method further comprises exposing the substrate to the activated gas to form an oxide film on the substrate. A growth rate of the oxide film is controlled by adjusting the third flow rate.
    Type: Application
    Filed: December 20, 2018
    Publication date: July 18, 2019
    Inventors: Hansel LO, Christopher S. OLSEN, Eric Kihara SHONO, Johanes S. SWENBERG, Erika HANSEN, Taewan KIM, Lara HAWRYLCHAK
  • Patent number: 10347492
    Abstract: A sequential plasma process is employed to enable the modification of the work function of a p-type metal layer in a metal gate structure. The sequential plasma process includes a plasma hydrogenation and a plasma process that includes electronegative species. The sequential plasma process is performed on a p-type metal layer in a film stack, thereby replacing suboxides and/or other non-stoichiometrically combined electronegative atoms disposed on or within layers of the film stack with stoichiometrically combined electronegative atoms, such as O atoms. As a result, the work function of the p-type metal layer can be modified without changing a thickness of the p-type metal layer.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: July 9, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Steven C. H. Hung, Johanes S. Swenberg, Wei Liu, Houda Graoui
  • Publication number: 20190172716
    Abstract: Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process, or a single-step plasma hydrogenation and nitridization process, is performed on a metal nitride layer in a film stack, thereby, according to some embodiments, removing oxygen atoms disposed within layers of the film stack and, in some embodiments, adding nitrogen atoms to the layers of the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift.
    Type: Application
    Filed: January 9, 2019
    Publication date: June 6, 2019
    Inventors: Houda Graoui, Johanes S. Swenberg, Wei Liu, Shashank Sharma
  • Publication number: 20190157143
    Abstract: Embodiments described herein generally relate to a sequential hydrogenation and nitridization process for reducing interfacial and bulk O atoms in a conductive structure in a semiconductor device. A hydrogenation and plasma nitridization process is performed on a metal nitride layer in a conductive structure prior to deposition of a second metal layer, thereby reducing interfacial oxygen atoms formed on a surface of the metal nitride and oxygen atoms present in the bulk metal layers of the conductive structure. As a result, adhesion of the second metal layer to the metal nitride layer is improved and the electrical resistance of the contact structure is reduced.
    Type: Application
    Filed: January 28, 2019
    Publication date: May 23, 2019
    Inventors: Johanes S. SWENBERG, Wei LIU, Houda GRAOUI, Shashank SHARMA, Shankar MUTHUKRISHNAN, Rene GEORGE
  • Publication number: 20190115219
    Abstract: Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process is performed on a metal nitride layer in a film stack, thereby removing oxygen atoms disposed within layers of the film stack and, in some embodiments eliminating an oxygen-containing interfacial layer disposed within the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift. Further, the metal gate structure operates with an increased leakage current that is as little as one quarter the increase in leakage current associated with a similar metal gate structure formed via conventional techniques.
    Type: Application
    Filed: October 12, 2018
    Publication date: April 18, 2019
    Inventors: Johanes S. SWENBERG, Wei LIU, Houda GRAOUI, Shashank SHARMA
  • Publication number: 20190105614
    Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.
    Type: Application
    Filed: August 29, 2018
    Publication date: April 11, 2019
    Inventors: Vishwas Kumar PANDEY, Lara HAWRYLCHAK, Eric Kihara SHONO, Kartik SHAH, Christopher S. OLSEN, Sairaju TALLAVARJULA, Kailash PRADHAN, Rene GEORGE, Johanes S. SWENBERG, Stephen MOFFATT
  • Patent number: 10236207
    Abstract: Embodiments described herein generally relate to a sequential hydrogenation and nitridization process for reducing interfacial and bulk O atoms in a conductive structure in a semiconductor device. A hydrogenation and plasma nitridization process is performed on a metal nitride layer in a conductive structure prior to deposition of a second metal layer, thereby reducing interfacial oxygen atoms formed on a surface of the metal nitride and oxygen atoms present in the bulk metal layers of the conductive structure. As a result, adhesion of the second metal layer to the metal nitride layer is improved and the electrical resistance of the contact structure is reduced.
    Type: Grant
    Filed: February 21, 2017
    Date of Patent: March 19, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Johanes S. Swenberg, Wei Liu, Houda Graoui, Shashank Sharma, Shankar Muthukrishnan, Rene George
  • Patent number: 10103027
    Abstract: Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process is performed on a metal nitride layer in a film stack, thereby removing oxygen atoms disposed within layers of the film stack and, in some embodiments eliminating an oxygen-containing interfacial layer disposed within the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift. Further, the metal gate structure operates with an increased leakage current that is as little as one quarter the increase in leakage current associated with a similar metal gate structure formed via conventional techniques.
    Type: Grant
    Filed: February 24, 2017
    Date of Patent: October 16, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Johanes S. Swenberg, Wei Liu, Houda Graoui, Shashank Sharma
  • Publication number: 20180218911
    Abstract: A sequential plasma process is employed to enable the modification of the work function of a p-type metal layer in a metal gate structure. The sequential plasma process includes a plasma hydrogenation and a plasma process that includes electronegative species. The sequential plasma process is performed on a p-type metal layer in a film stack, thereby replacing suboxides and/or other non-stoichiometrically combined electronegative atoms disposed on or within layers of the film stack with stoichiometrically combined electronegative atoms, such as O atoms. As a result, the work function of the p-type metal layer can be modified without changing a thickness of the p-type metal layer.
    Type: Application
    Filed: January 18, 2018
    Publication date: August 2, 2018
    Inventors: Steven C. H. HUNG, Johanes S. SWENBERG, Wei LIU, Houda GRAOUI
  • Publication number: 20170365512
    Abstract: Embodiments described herein generally relate to a sequential hydrogenation and nitridization process for reducing interfacial and bulk O atoms in a conductive structure in a semiconductor device. A hydrogenation and plasma nitridization process is performed on a metal nitride layer in a conductive structure prior to deposition of a second metal layer, thereby reducing interfacial oxygen atoms formed on a surface of the metal nitride and oxygen atoms present in the bulk metal layers of the conductive structure. As a result, adhesion of the second metal layer to the metal nitride layer is improved and the electrical resistance of the contact structure is reduced.
    Type: Application
    Filed: February 21, 2017
    Publication date: December 21, 2017
    Inventors: Johanes S. SWENBERG, Wei LIU, Houda GRAOUI, Shashank SHARMA, Shankar MUTHUKRISHNAN, Rene GEORGE