Patents by Inventor Johanes S. Swenberg
Johanes S. Swenberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11081340Abstract: Methods for conformal radical oxidation of structures are provided. The method comprises positioning a substrate in a processing region of a processing chamber. The method further comprises flowing hydrogen gas into a precursor activator at a first flow rate, wherein the precursor activator is fluidly coupled with the processing region. The method further comprises flowing oxygen gas into the precursor activator at a second flow rate. The method further comprises flowing argon gas into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the hydrogen gas, oxygen gas, and argon gas. The method further comprises flowing the plasma into the processing region. The method further comprises exposing the substrate to the plasma to form an oxide film on the substrate, wherein a growth rate of the oxide film is controlled by adjusting the third flow rate.Type: GrantFiled: April 15, 2020Date of Patent: August 3, 2021Assignee: Applied Materials, Inc.Inventors: Hansel Lo, Christopher S. Olsen, Eric Kihara Shono, Johanes S. Swenberg, Erika Hansen, Taewan Kim, Lara Hawrylchak
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Patent number: 10971357Abstract: A method of modifying a layer in a semiconductor device is provided. The method includes depositing a low quality film on a semiconductor substrate, and exposing a surface of the low quality film to a first process gas comprising helium while the substrate is heated to a first temperature, and exposing a surface of the low quality film to a second process gas comprising oxygen gas while the substrate is heated to a second temperature that is different than the first temperature. The electrical properties of the film are improved by undergoing the aforementioned processes.Type: GrantFiled: October 4, 2018Date of Patent: April 6, 2021Assignee: Applied Materials, Inc.Inventors: Wei Liu, Theresa Kramer Guarini, Linlin Wang, Malcolm Bevan, Johanes S. Swenberg, Vladimir Nagorny, Bernard L. Hwang, Kin Pong Lo, Lara Hawrylchak, Rene George
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Publication number: 20200251331Abstract: Methods for conformal radical oxidation of structures are provided. The method comprises positioning a substrate in a processing region of a processing chamber. The method further comprises flowing hydrogen gas into a precursor activator at a first flow rate, wherein the precursor activator is fluidly coupled with the processing region. The method further comprises flowing oxygen gas into the precursor activator at a second flow rate. The method further comprises flowing argon gas into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the hydrogen gas, oxygen gas, and argon gas. The method further comprises flowing the plasma into the processing region. The method further comprises exposing the substrate to the plasma to form an oxide film on the substrate, wherein a growth rate of the oxide film is controlled by adjusting the third flow rate.Type: ApplicationFiled: April 15, 2020Publication date: August 6, 2020Inventors: Hansel LO, Christopher S. OLSEN, Eric Kihara SHONO, Johanes S. SWENBERG, Erika HANSEN, Taewan KIM, Lara HAWRYLCHAK
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Patent number: 10636650Abstract: Methods for conformal radical oxidation of structures are provided. In one implementation, the method comprises flowing hydrogen into a processing chamber at a first flow rate, wherein the processing chamber has a substrate positioned therein. The method further comprises flowing oxygen into a precursor activator at a second flow rate. The method further comprises flowing argon into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the oxygen and argon. The method further comprises flowing the plasma into the processing chamber, wherein the plasma mixes with the hydrogen gas to create an activated processing gas. The method further comprises exposing the substrate to the activated gas to form an oxide film on the substrate. A growth rate of the oxide film is controlled by adjusting the third flow rate.Type: GrantFiled: December 20, 2018Date of Patent: April 28, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Hansel Lo, Christopher S. Olsen, Eric Kihara Shono, Johanes S. Swenberg, Erika Hansen, Taewan Kim, Lara Hawrylchak
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Publication number: 20200111659Abstract: A method of modifying a layer in a semiconductor device is provided. The method includes depositing a low quality film on a semiconductor substrate, and exposing a surface of the low quality film to a first process gas comprising helium while the substrate is heated to a first temperature, and exposing a surface of the low quality film to a second process gas comprising oxygen gas while the substrate is heated to a second temperature that is different than the first temperature. The electrical properties of the film are improved by undergoing the aforementioned processes.Type: ApplicationFiled: October 4, 2018Publication date: April 9, 2020Inventors: Wei LIU, Theresa Kramer GUARINI, Linlin WANG, Malcolm BEVAN, Johanes S. SWENBERG, Vladimir NAGORNY, Bernard L. HWANG, Kin Pong LO, Lara HAWRYLCHAK, Rene GEORGE
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Patent number: 10580643Abstract: Embodiments of the present disclosure generally relate to methods for forming a high-k gate dielectric in a transistor. The high-k gate dielectric may be formed by introducing a fluorine containing gas into a processing chamber during the deposition of the high-k gate dielectric in the processing chamber. In one embodiment, the high-k gate dielectric is formed by an ALD process in a processing chamber, and a fluorine containing gas is introduced into the processing chamber during one or more stages of the ALD process. Fluorine ions, molecules or radicals from the fluorine containing gas (may be activated by a plasma) can fill the oxygen vacancies in the high-k dielectric.Type: GrantFiled: January 23, 2017Date of Patent: March 3, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Johanes S. Swenberg, Linlin Wang, Wei Liu
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Patent number: 10510545Abstract: Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process, or a single-step plasma hydrogenation and nitridization process, is performed on a metal nitride layer in a film stack, thereby, according to some embodiments, removing oxygen atoms disposed within layers of the film stack and, in some embodiments, adding nitrogen atoms to the layers of the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift.Type: GrantFiled: January 9, 2019Date of Patent: December 17, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Houda Graoui, Johanes S. Swenberg, Wei Liu, Steven C. H. Hung
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Patent number: 10504779Abstract: Embodiments described herein generally relate to a sequential hydrogenation and nitridization process for reducing interfacial and bulk O atoms in a conductive structure in a semiconductor device. A hydrogenation and plasma nitridization process is performed on a metal nitride layer in a conductive structure prior to deposition of a second metal layer, thereby reducing interfacial oxygen atoms formed on a surface of the metal nitride and oxygen atoms present in the bulk metal layers of the conductive structure. As a result, adhesion of the second metal layer to the metal nitride layer is improved and the electrical resistance of the contact structure is reduced.Type: GrantFiled: January 28, 2019Date of Patent: December 10, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Johanes S. Swenberg, Wei Liu, Houda Graoui, Shashank Sharma, Shankar Muthukrishnan, Rene George
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Patent number: 10431466Abstract: Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process is performed on a metal nitride layer in a film stack, thereby removing oxygen atoms disposed within layers of the film stack and, in some embodiments eliminating an oxygen-containing interfacial layer disposed within the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift. Further, the metal gate structure operates with an increased leakage current that is as little as one quarter the increase in leakage current associated with a similar metal gate structure formed via conventional techniques.Type: GrantFiled: October 12, 2018Date of Patent: October 1, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Johanes S. Swenberg, Wei Liu, Houda Graoui, Steven C. H. Hung
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Publication number: 20190287805Abstract: A sequential plasma process is employed to enable the modification of the work function of a p-type metal layer in a metal gate structure. The sequential plasma process includes a plasma hydrogenation and a plasma process that includes electronegative species. The sequential plasma process is performed on a p-type metal layer in a film stack, thereby replacing suboxides and/or other non-stoichiometrically combined electronegative atoms disposed on or within layers of the film stack with stoichiometrically combined electronegative atoms, such as O atoms. As a result, the work function of the p-type metal layer can be modified without changing a thickness of the p-type metal layer.Type: ApplicationFiled: May 24, 2019Publication date: September 19, 2019Inventors: Steven C. H. HUNG, Johanes S. SWENBERG, Wei LIU, Houda GRAOUI
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Publication number: 20190221427Abstract: Methods for conformal radical oxidation of structures are provided. In one implementation, the method comprises flowing hydrogen into a processing chamber at a first flow rate, wherein the processing chamber has a substrate positioned therein. The method further comprises flowing oxygen into a precursor activator at a second flow rate. The method further comprises flowing argon into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the oxygen and argon. The method further comprises flowing the plasma into the processing chamber, wherein the plasma mixes with the hydrogen gas to create an activated processing gas. The method further comprises exposing the substrate to the activated gas to form an oxide film on the substrate. A growth rate of the oxide film is controlled by adjusting the third flow rate.Type: ApplicationFiled: December 20, 2018Publication date: July 18, 2019Inventors: Hansel LO, Christopher S. OLSEN, Eric Kihara SHONO, Johanes S. SWENBERG, Erika HANSEN, Taewan KIM, Lara HAWRYLCHAK
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Patent number: 10347492Abstract: A sequential plasma process is employed to enable the modification of the work function of a p-type metal layer in a metal gate structure. The sequential plasma process includes a plasma hydrogenation and a plasma process that includes electronegative species. The sequential plasma process is performed on a p-type metal layer in a film stack, thereby replacing suboxides and/or other non-stoichiometrically combined electronegative atoms disposed on or within layers of the film stack with stoichiometrically combined electronegative atoms, such as O atoms. As a result, the work function of the p-type metal layer can be modified without changing a thickness of the p-type metal layer.Type: GrantFiled: January 18, 2018Date of Patent: July 9, 2019Assignee: Applied Materials, Inc.Inventors: Steven C. H. Hung, Johanes S. Swenberg, Wei Liu, Houda Graoui
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Publication number: 20190172716Abstract: Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process, or a single-step plasma hydrogenation and nitridization process, is performed on a metal nitride layer in a film stack, thereby, according to some embodiments, removing oxygen atoms disposed within layers of the film stack and, in some embodiments, adding nitrogen atoms to the layers of the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift.Type: ApplicationFiled: January 9, 2019Publication date: June 6, 2019Inventors: Houda Graoui, Johanes S. Swenberg, Wei Liu, Shashank Sharma
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Publication number: 20190157143Abstract: Embodiments described herein generally relate to a sequential hydrogenation and nitridization process for reducing interfacial and bulk O atoms in a conductive structure in a semiconductor device. A hydrogenation and plasma nitridization process is performed on a metal nitride layer in a conductive structure prior to deposition of a second metal layer, thereby reducing interfacial oxygen atoms formed on a surface of the metal nitride and oxygen atoms present in the bulk metal layers of the conductive structure. As a result, adhesion of the second metal layer to the metal nitride layer is improved and the electrical resistance of the contact structure is reduced.Type: ApplicationFiled: January 28, 2019Publication date: May 23, 2019Inventors: Johanes S. SWENBERG, Wei LIU, Houda GRAOUI, Shashank SHARMA, Shankar MUTHUKRISHNAN, Rene GEORGE
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Publication number: 20190115219Abstract: Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process is performed on a metal nitride layer in a film stack, thereby removing oxygen atoms disposed within layers of the film stack and, in some embodiments eliminating an oxygen-containing interfacial layer disposed within the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift. Further, the metal gate structure operates with an increased leakage current that is as little as one quarter the increase in leakage current associated with a similar metal gate structure formed via conventional techniques.Type: ApplicationFiled: October 12, 2018Publication date: April 18, 2019Inventors: Johanes S. SWENBERG, Wei LIU, Houda GRAOUI, Shashank SHARMA
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Publication number: 20190105614Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.Type: ApplicationFiled: August 29, 2018Publication date: April 11, 2019Inventors: Vishwas Kumar PANDEY, Lara HAWRYLCHAK, Eric Kihara SHONO, Kartik SHAH, Christopher S. OLSEN, Sairaju TALLAVARJULA, Kailash PRADHAN, Rene GEORGE, Johanes S. SWENBERG, Stephen MOFFATT
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Patent number: 10236207Abstract: Embodiments described herein generally relate to a sequential hydrogenation and nitridization process for reducing interfacial and bulk O atoms in a conductive structure in a semiconductor device. A hydrogenation and plasma nitridization process is performed on a metal nitride layer in a conductive structure prior to deposition of a second metal layer, thereby reducing interfacial oxygen atoms formed on a surface of the metal nitride and oxygen atoms present in the bulk metal layers of the conductive structure. As a result, adhesion of the second metal layer to the metal nitride layer is improved and the electrical resistance of the contact structure is reduced.Type: GrantFiled: February 21, 2017Date of Patent: March 19, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Johanes S. Swenberg, Wei Liu, Houda Graoui, Shashank Sharma, Shankar Muthukrishnan, Rene George
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Patent number: 10103027Abstract: Embodiments described herein generally relate to enable the formation of a metal gate structure with a reduced effective oxide thickness over a similar structure formed via conventional methods. A plasma hydrogenation process followed by a plasma nitridization process is performed on a metal nitride layer in a film stack, thereby removing oxygen atoms disposed within layers of the film stack and, in some embodiments eliminating an oxygen-containing interfacial layer disposed within the film stack. As a result, an effective oxide thickness of the metal gate structure is reduced with little or no accompanying flatband voltage shift. Further, the metal gate structure operates with an increased leakage current that is as little as one quarter the increase in leakage current associated with a similar metal gate structure formed via conventional techniques.Type: GrantFiled: February 24, 2017Date of Patent: October 16, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Johanes S. Swenberg, Wei Liu, Houda Graoui, Shashank Sharma
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Publication number: 20180218911Abstract: A sequential plasma process is employed to enable the modification of the work function of a p-type metal layer in a metal gate structure. The sequential plasma process includes a plasma hydrogenation and a plasma process that includes electronegative species. The sequential plasma process is performed on a p-type metal layer in a film stack, thereby replacing suboxides and/or other non-stoichiometrically combined electronegative atoms disposed on or within layers of the film stack with stoichiometrically combined electronegative atoms, such as O atoms. As a result, the work function of the p-type metal layer can be modified without changing a thickness of the p-type metal layer.Type: ApplicationFiled: January 18, 2018Publication date: August 2, 2018Inventors: Steven C. H. HUNG, Johanes S. SWENBERG, Wei LIU, Houda GRAOUI
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Publication number: 20170365512Abstract: Embodiments described herein generally relate to a sequential hydrogenation and nitridization process for reducing interfacial and bulk O atoms in a conductive structure in a semiconductor device. A hydrogenation and plasma nitridization process is performed on a metal nitride layer in a conductive structure prior to deposition of a second metal layer, thereby reducing interfacial oxygen atoms formed on a surface of the metal nitride and oxygen atoms present in the bulk metal layers of the conductive structure. As a result, adhesion of the second metal layer to the metal nitride layer is improved and the electrical resistance of the contact structure is reduced.Type: ApplicationFiled: February 21, 2017Publication date: December 21, 2017Inventors: Johanes S. SWENBERG, Wei LIU, Houda GRAOUI, Shashank SHARMA, Shankar MUTHUKRISHNAN, Rene GEORGE