Patents by Inventor Johanes Swenberg

Johanes Swenberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11271097
    Abstract: Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include forming a silicon layer over a semiconductor substrate. The semiconductor substrate may include silicon germanium. The methods may include oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The methods may include removing the sacrificial oxide. The methods may include oxidizing the portion of the silicon layer in contact with the semiconductor substrate to form an oxygen-containing material. The methods may include forming a high-k dielectric material overlying the oxygen-containing material.
    Type: Grant
    Filed: October 26, 2020
    Date of Patent: March 8, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Steven C. Hung, Benjamin Colombeau, Abhishek Dube, Sheng-Chin Kung, Patricia M. Liu, Malcolm J. Bevan, Johanes Swenberg
  • Publication number: 20210134986
    Abstract: Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include forming a silicon layer over a semiconductor substrate. The semiconductor substrate may include silicon germanium. The methods may include oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The methods may include removing the sacrificial oxide. The methods may include oxidizing the portion of the silicon layer in contact with the semiconductor substrate to form an oxygen-containing material. The methods may include forming a high-k dielectric material overlying the oxygen-containing material.
    Type: Application
    Filed: October 26, 2020
    Publication date: May 6, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Steven C. Hung, Benjamin Colombeau, Abhishek Dube, Sheng-Chin Kung, Patricia M. Liu, Malcolm J. Bevan, Johanes Swenberg
  • Patent number: 10872763
    Abstract: Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include delivering a nitrogen-containing precursor or an oxygen-containing precursor to a substrate contained in a semiconductor processing chamber. The methods may include forming reactive ligands on an exposed surface of the substrate with the nitrogen-containing precursor or the oxygen-containing precursor. The methods may also include forming a high-k dielectric material overlying the substrate.
    Type: Grant
    Filed: May 3, 2019
    Date of Patent: December 22, 2020
    Assignee: Applied Materials, Inc.
    Inventors: David Chu, Steven C. Hung, Malcolm J. Bevan, Charles Chu, Tatsuya E. Sato, Shih-Chung Chen, Patricia M. Liu, Johanes Swenberg
  • Publication number: 20200350157
    Abstract: Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include delivering a nitrogen-containing precursor or an oxygen-containing precursor to a substrate contained in a semiconductor processing chamber. The methods may include forming reactive ligands on an exposed surface of the substrate with the nitrogen-containing precursor or the oxygen-containing precursor. The methods may also include forming a high-k dielectric material overlying the substrate.
    Type: Application
    Filed: May 3, 2019
    Publication date: November 5, 2020
    Applicant: Applied Materials, Inc.
    Inventors: David Chu, Steven C. Hung, Malcolm J. Bevan, Charles Chu, Tatsuya E. Sato, Shih-Chung Chen, Patricia M. Liu, Johanes Swenberg
  • Publication number: 20200144397
    Abstract: Methods and apparatuses for processing substrates, such as during silicon-germanium pre-cleans, are provided. A method includes introducing the substrate into a processing system, where the substrate contains a plurality of silicon-containing (e.g., SiGe) fins and a contaminant disposed on the silicon-containing fins, and exposing the substrate to a plasma treatment to remove at least a portion of the contaminant disposed from the silicon-containing fins. The method also includes exposing the substrate to an oxidation treatment to produce an oxide layer on the silicon-containing fins and the remaining contaminant thereon, then exposing the substrate to a dry-clean treatment to remove the oxide layer and the remaining contaminant from the silicon-containing fins and produce a cleaned surface thereon, and depositing an epitaxial layer on the cleaned surface on the silicon-containing fins.
    Type: Application
    Filed: September 17, 2019
    Publication date: May 7, 2020
    Applicants: Applied Materials, Inc., Applied Materials, Inc.
    Inventors: Abhishek DUBE, Sheng-Chin KUNG, Malcolm BEVAN, Johanes SWENBERG
  • Patent number: 9530898
    Abstract: Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
    Type: Grant
    Filed: October 16, 2014
    Date of Patent: December 27, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Udayan Ganguly, Yoshitaka Yokota, Jing Tang, Sunderraj Thirupapuliyur, Christopher Sean Olsen, Shiyu Sun, Tze Wing Poon, Wei Liu, Johanes Swenberg, Vicky U. Nguyen, Swaminathar Srinivasan, Jacob Newman
  • Patent number: 9514968
    Abstract: Methods and apparatus for improving selective oxidation against metals in a process chamber are provided herein. In some embodiments, a method of oxidizing a first surface of a substrate disposed in a process chamber having a processing volume defined by one or more chamber walls may include exposing the substrate to an oxidizing gas to oxidize the first surface; and actively heating at least one of the one or more chamber walls to increase a temperature of the one or more chamber walls to a first temperature of at least the dew point of water while exposing the substrate to the oxidizing gas.
    Type: Grant
    Filed: March 30, 2015
    Date of Patent: December 6, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Agus Tjandra, Christopher S. Olsen, Johanes Swenberg, Lara Hawrylchak
  • Publication number: 20150332941
    Abstract: Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate having a first layer may include disposing a substrate atop a substrate support in a lower processing volume of a process chamber beneath an ion shield having a bias power applied thereto, the ion shield comprising a substantially flat member supported parallel to the substrate support, and a plurality of apertures formed through the flat member, wherein the ratio of the aperture diameter to the thickness flat member ranges from about 10:1-1:10; flowing a process gas into an upper processing volume above the ion shield; forming a plasma from the process gas within the upper processing volume; treating the first layer with neutral radicals that pass through the ion shield; and heating the substrate to a temperature of up to about 550 degrees Celsius while treating the first layer.
    Type: Application
    Filed: May 22, 2015
    Publication date: November 19, 2015
    Inventors: JEFFREY TOBIN, BERNARD L. HWANG, CANFENG LAI, LARA HAWRYLCHAK, WEI LIU, JOHANES SWENBERG
  • Publication number: 20150206777
    Abstract: Methods and apparatus for improving selective oxidation against metals in a process chamber are provided herein. In some embodiments, a method of oxidizing a first surface of a substrate disposed in a process chamber having a processing volume defined by one or more chamber walls may include exposing the substrate to an oxidizing gas to oxidize the first surface; and actively heating at least one of the one or more chamber walls to increase a temperature of the one or more chamber walls to a first temperature of at least the dew point of water while exposing the substrate to the oxidizing gas.
    Type: Application
    Filed: March 30, 2015
    Publication date: July 23, 2015
    Inventors: AGUS TJANDRA, CHRISTOPHER S. OLSEN, JOHANES SWENBERG, LARA HAWRYLCHAK
  • Patent number: 9054048
    Abstract: Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes exposing a first layer of a substrate to a plasma formed from a process gas comprising predominantly a mixture of ammonia (NH3) and a noble gas, wherein ammonia is about 0.5 to about 15 percent of the process gas; and maintaining the process chamber at a pressure of about 10 mTorr to about 80 mTorr while exposing the first layer to the plasma to transform at least an upper portion of the first layer into a nitrogen-containing layer.
    Type: Grant
    Filed: July 5, 2012
    Date of Patent: June 9, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Wei Liu, Malcolm J. Bevan, Christopher S. Olsen, Johanes Swenberg
  • Patent number: 9048190
    Abstract: Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate having a first layer may include disposing a substrate atop a substrate support in a lower processing volume of a process chamber beneath an ion shield having a bias power applied thereto, the ion shield comprising a substantially flat member supported parallel to the substrate support, and a plurality of apertures formed through the flat member, wherein the ratio of the aperture diameter to the thickness flat member ranges from about 10:1-1:10; flowing a process gas into an upper processing volume above the ion shield; forming a plasma from the process gas within the upper processing volume; treating the first layer with neutral radicals that pass through the ion shield; and heating the substrate to a temperature of up to about 550 degrees Celsius while treating the first layer.
    Type: Grant
    Filed: October 2, 2013
    Date of Patent: June 2, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jeffrey Tobin, Bernard L. Hwang, Canfeng Lai, Lara Hawrylchak, Wei Liu, Johanes Swenberg
  • Publication number: 20150102396
    Abstract: Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
    Type: Application
    Filed: October 16, 2014
    Publication date: April 16, 2015
    Inventors: UDAYAN GANGULY, YOSHITAKA YOKOTA, JING TANG, SUNDERRAJ THIRUPAPULIYUR, CHRISTOPHER SEAN OLSEN, SHIYU SUN, TZE WING POON, WEI LIU, JOHANES SWENBERG, VICKY U. NGUYEN, SWAMINATHAR SRINIVASAN, JACOB NEWMAN
  • Patent number: 8993458
    Abstract: Methods and apparatus for improving selective oxidation against metals in a process chamber are provided herein. In some embodiments, a method of oxidizing a first surface of a substrate disposed in a process chamber having a processing volume defined by one or more chamber walls may include exposing the substrate to an oxidizing gas to oxidize the first surface; and actively heating at least one of the one or more chamber walls to increase a temperature of the one or more chamber walls to a first temperature of at least the dew point of water while exposing the substrate to the oxidizing gas.
    Type: Grant
    Filed: February 11, 2013
    Date of Patent: March 31, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Agus Tjandra, Christopher S. Olsen, Johanes Swenberg, Lara Hawrylchak
  • Patent number: 8871645
    Abstract: Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
    Type: Grant
    Filed: September 11, 2009
    Date of Patent: October 28, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Udayan Ganguly, Yoshita Yokota, Jing Tang, Sunderraj Thirupapuliyur, Christopher Sean Olsen, Shiyu Sun, Tze Wing Poon, Wei Liu, Johanes Swenberg, Vicky U. Nguyen, Swaminathan Srinivasan, Jacob Newman
  • Publication number: 20140099795
    Abstract: Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate having a first layer may include disposing a substrate atop a substrate support in a lower processing volume of a process chamber beneath an ion shield having a bias power applied thereto, the ion shield comprising a substantially flat member supported parallel to the substrate support, and a plurality of apertures formed through the flat member, wherein the ratio of the aperture diameter to the thickness flat member ranges from about 10:1-1:10; flowing a process gas into an upper processing volume above the ion shield; forming a plasma from the process gas within the upper processing volume; treating the first layer with neutral radicals that pass through the ion shield; and heating the substrate to a temperature of up to about 550 degrees Celsius while treating the first layer.
    Type: Application
    Filed: October 2, 2013
    Publication date: April 10, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: JEFFREY TOBIN, BERNARD L. HWANG, CANFENG LAI, LARA HAWRYLCHAK, WEI LIU, JOHANES SWENBERG
  • Patent number: 8546273
    Abstract: Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method of forming a nitrogen-containing layer may include placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas consisting essentially of ammonia (NH3) and an inert gas while maintaining the process chamber at a pressure of about 10 mTorr to about 40 mTorr to transform at least an upper portion of the first layer into a nitrogen-containing layer.
    Type: Grant
    Filed: July 27, 2011
    Date of Patent: October 1, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Malcolm J. Bevan, Johanes Swenberg, Son T. Nguyen, Wei Liu, Jose Antonio Marin, Jian Li
  • Patent number: 8481433
    Abstract: Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas comprising nitrogen while maintaining the process chamber at a pressure of about 10 mTorr to about 40 mTorr to transform at least an upper portion of the first layer into a nitrogen-containing layer. In some embodiments, the process gas includes ammonia (NH3).
    Type: Grant
    Filed: March 29, 2010
    Date of Patent: July 9, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Malcolm J. Bevan, Johanes Swenberg, Son T. Nguyen, Wei Liu, Jose Antonio Marin, Jian Li
  • Publication number: 20130012032
    Abstract: Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes exposing a first layer of a substrate to a plasma formed from a process gas comprising predominantly a mixture of ammonia (NH3) and a noble gas, wherein ammonia is about 0.5 to about 15 percent of the process gas; and maintaining the process chamber at a pressure of about 10 mTorr to about 80 mTorr while exposing the first layer to the plasma to transform at least an upper portion of the first layer into a nitrogen-containing layer.
    Type: Application
    Filed: July 5, 2012
    Publication date: January 10, 2013
    Applicant: APPLIED MATERIALS, INC.
    Inventors: WEI LIU, MALCOLM J. BEVAN, CHRISTOPHER S. OLSEN, JOHANES SWENBERG
  • Patent number: 8309440
    Abstract: Embodiments described herein provide methods for processing a substrate. One embodiment comprises positioning a substrate in a processing region of a processing chamber, exposing a surface of the substrate disposed in the processing chamber to an oxygen containing gas to form a first oxygen containing layer on the surface, removing at least a portion of the first oxygen containing layer to expose at least a portion of the surface of the substrate, and exposing the surface of the substrate to an oxygen containing gas to form a second oxygen containing layer on the surface.
    Type: Grant
    Filed: July 1, 2011
    Date of Patent: November 13, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Errol Antonio C. Sanchez, Johanes Swenberg, David K. Carlson, Roisin L. Doherty
  • Patent number: 8198671
    Abstract: A flash memory device comprises a substrate comprising silicon with a silicon dioxide layer thereon. A silicon-oxygen-nitrogen layer is on the silicon dioxide layer, and the silicon-oxygen-nitrogen layer comprises a shaped concentration level profile of oxygen through the thickness of the layer. A blocking dielectric layer is on the silicon-oxygen-nitrogen layer, and a gate electrode is on the blocking dielectric layer. Oxygen ions can be implanted into a silicon nitride layer to form the silicon-oxygen-nitrogen layer.
    Type: Grant
    Filed: April 22, 2010
    Date of Patent: June 12, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Christopher Sean Olsen, Tze Wing Poon, Udayan Ganguly, Johanes Swenberg