Abstract: The present invention pertains to methods, apparatuses and computer programs for processing an object for lithography. A method for processing an object for lithography comprises: (a) providing a first gas; (b) providing a second gas, the second gas including second molecules capable of performing an inversion oscillation; (c) providing a particle beam in a working region of the object for production of a deposition material in the working region based at least partly on the first gas and the second gas. The second gas is provided with a gas flow rate of less than 5 sccm, preferably less than 2 sccm, more preferably less than 0.5 sccm.

Abstract: The scintillation material has a maximum oxygen content of 2,500 ppm and is a compound of formula LnX3 or LnX3:D, wherein Ln is at least one rare earth element, X is F, Cl, Br, or I; and D is at least one cationic dopant of one or more of the elements Y, Zr, Pd, Hf and Bi and, if present, is present in an amount of 10 ppm to 10,000 ppm. The process of making the scintillation material includes optionally mixing the compound of the formula LnX3 with the at least one cationic dopant, heating the compound or the mixture so obtained to a melting temperature to form a melt, adding one or more carbon halides and then cooling the melt to form a crystal or crystalline structure. The maximum oxygen content of the scintillation material is preferably 1000 ppm.

Abstract: The scintillation materials may exist in single crystalline, polycrystalline or ceramic form. Preferably, the scintillation materials are in single crystalline form. According to the present invention all cation-forming elements are present in the scintillation material in an amount, which is higher than stoichiometric (hyper- or over-stoichiometric) with respect to the anion-forming elements.

Abstract: The scintillation material is a compound of the general formula LnX3:D, in which Ln is Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu; X is F, Cl, Br or I, and D is at least one cation of elements Y, Zr, Pd, Hf and Bi as dopant and is contained in the material in an amount of 10 ppm to 10,000 ppm. When the scintillation material includes the preferred CeBr3 and Bi as a cationic dopant, it also includes at least one other cation of the elements Y, Zr, Pd and Hf. The scintillation material may be in single crystal or polycrystalline form.

Abstract: The process produces a scintillation material of formula LnX3 or LnX3:D, wherein Ln is at least one rare earth element, X is F, Cl, Br, or I; and D is at least one cationic dopant selected from the group consisting of Y, Zr, Pd, Hf and Bi. The at least one cationic dopant is present in the scintillation material in an amount of 10 ppm to 10,000 ppm. The process includes optionally mixing the compound of the general empirical formula LnX3 with the at least one cationic dopant, heating the compound or the mixture obtained by the optional mixing to a melting temperature thereof, then growing the crystal or crystalline structure and cooling the resulting crystal or crystalline structure from a growing temperature to a temperature of 100° C. at a cooling rate of less than 20 K/h.

Abstract: A large-volume scintillation crystal affording a high scintillation yield and having high mechanical strength is obtained by growing a crystal from a melt containing strontium iodide, barium iodide or a mixture thereof and by doping with an activator. To this end, the melt is enclosed in a closed volume. Before and/or during the growing, the melt is in diffusion-permitting connection, via the enclosed volume, with an oxygen getter which sets a constant oxygen potential in the closed volume and the melt. Such a scintillation crystal is suitable for detecting UV-, gamma-, beta-, alpha- and/or positron radiation.

Abstract: The scintillation material has a maximum oxygen content of 2,500 ppm and is a compound of formula LnX3 or LnX3:D, wherein Ln is at least one rare earth element, X is F, Cl, Br, or I; and D is at least one cationic dopant of one or more of the elements Y, Zr, Pd, Hf and Bi and, if present, is present in an amount of 10 ppm to 10,000 ppm. The process of making the scintillation material includes optionally mixing the compound of the formula LnX3 with the at least one cationic dopant, heating the compound or the mixture so obtained to a melting temperature to form a melt, adding one or more carbon halides and then cooling the melt to form a crystal or crystalline structure. The maximum oxygen content of the scintillation material is preferably 1000 ppm.

Abstract: The process for growing a rare earth aluminum or gallium garnet crystal from a melt includes melting an aluminum or gallium garnet of at least one rare earth, preferably Lu or Y, or a mixture of oxides of formula Me2O3, wherein Me represents the rare earth or aluminum or gallium. The melt also includes a fluoride anion acting as a counter ion for the rare earth and the aluminum or gallium. The components comprising the rare earth and aluminum or gallium are introduced in the melt so that the amounts of the rare earth and aluminum or gallium are defined by the formula: SE(3-x)X(5-y)O(12-2x-2y)F(x+y), wherein 0?x?0.2 and 0?y?0.2 and 0<x+y?0.4, and X is aluminum or gallium. The resulting crystals are used for optical elements at 193 nm, such as lenses, and as scintillation materials.

Abstract: The scintillation materials may exist in single crystalline, polycrystalline or ceramic form. Preferably, the scintillation materials are in single crystalline form. According to the present invention all cation-forming elements are present in the scintillation material in an amount, which is higher than stoichiometric (hyper- or over-stoichiometric) with respect to the anion-forming elements.

Abstract: A method of selecting suitable laser-stable optical material for making an optical element, especially for transmission at wavelengths under 200 nm, is described. It includes a first pre-irradiation to produce radiation damage, subsequent excitation of induced fluorescence with light at between 350 to 700 nm at least ten minutes after the first pre-irradiation and measurement of induced fluorescence intensities at one or more wavelengths between 550 nm and 810 nm. After the fluorescence intensity measurement a second pre-irradiation is performed with an at least 1000-fold higher energy than in the first pre-irradiation and then induced fluorescence intensities are again measured to determine the increase in the fluorescence intensities.