Abstract: A computer system processing heterogeneous measurements from various metrology apparatuses includes a processor, a storage, and a software platform. The storage includes a recording of direct models expressing the heterogeneous measurements as a function of predefined features of electronic devices or parameters for processing the measurements. The software platform includes a functional cost calculation module and an interface selecting one of plural cost functions. The functional module provides an estimation of a cost by comparison of the heterogeneous measurements with an estimation of the measurements obtained by an application of the direct models to values of predefined features or processing parameters. The software platform includes a functional solver module and an interface selecting one of plural solvers, for an iterative optimization by the solver of the values based on the output of the cost calculation module and by inversion of the direct models.

Abstract: A calibration method for a CD-SEM technique, includes determining a match function converting at least one parameter obtained by modelling a measurement supplied by the CD-SEM technique into a function of at least one parameter representative of a measurement supplied by a characterisation technique different from the CD-SEM technique, the match function being characterised by a plurality of coefficients; performing measurements on a plurality of patterns chosen to cover the desired validity range for the calibration, the measurements being done using both the CD-SEM technique to be calibrated and the reference technique; determining, from the measurements, a set of coefficients of the match function minimising the distance between the functions of the parameters measured using the reference technique and applying the match function to the parameters obtained by modelling measurements supplied by the CD-SEM; using the set of coefficients during the implementation of the calibrated CD-SEM technique.

Abstract: A computer system processing heterogeneous measurements from various metrology apparatuses includes a processor, a storage, and a software platform. The storage includes a recording of direct models expressing the heterogeneous measurements as a function of predefined features of electronic devices or parameters for processing the measurements. The software platform includes a functional cost calculation module and an interface selecting one of plural cost functions. The functional module provides an estimation of a cost by comparison of the heterogeneous measurements with an estimation of the measurements obtained by an application of the direct models to values of predefined features or processing parameters. The software platform includes a functional solver module and an interface selecting one of plural solvers, for an iterative optimization by the solver of the values based on the output of the cost calculation module and by inversion of the direct models.

Abstract: A calibration method for a CD-SEM technique, includes determining a match function converting at least one parameter obtained by modelling a measurement supplied by the CD-SEM technique into a function of at least one parameter representative of a measurement supplied by a characterisation technique different from the CD-SEM technique, the match function being characterised by a plurality of coefficients; performing measurements on a plurality of patterns chosen to cover the desired validity range for the calibration, the measurements being done using both the CD-SEM technique to be calibrated and the reference technique; determining, from the measurements, a set of coefficients of the match function minimising the distance between the functions of the parameters measured using the reference technique and applying the match function to the parameters obtained by modelling measurements supplied by the CD-SEM; using the set of coefficients during the implementation of the calibrated CD-SEM technique.

Abstract: A method of characterizing a pattern includes determining an image of the contour of the pattern to be characterized with an imagining instrumentation; processing the image, the processing including determining a plurality of points located along the contour and sampled according to a given sampling interval; for each point, identifying a point located on a reference contour and corresponding to the same sampling interval number and determining a dimensionless intermediate coefficient representative of the deviation between the point and the corresponding point on the reference contour; determining a final dimensionless coefficient on the basis of the set of intermediate coefficients corresponding to the plurality of points, the final coefficient being representative of the deviation between the contour of the pattern to be characterized and the reference contour.

Abstract: A structure for the characterization of a tip of an atomic force microscope, the structure being produced on a substrate and including a first support element located above the substrate; a first characterization element with a constant thickness, the first characterization element being located above the first support element and having an upper flat surface and a lower flat surface covering the upper surface of the first support element with two zones extending beyond the upper surface of the first support element, each zone having a characterization surface at one end which is capable of coming into contact with a tip to be characterized, the upper surface and the lower surface of said first characterization element being parallel to the upper surface of the substrate.

Abstract: A method of determining an applicable threshold for determining the critical dimension of a category of patterns imaged by atomic force scanning electron microscopy is presented. The method includes acquiring, from a plurality of patterns, a pair of images for each pattern; for each pair of images determining a reference critical dimension via an image obtained by a reference instrumentation and determining an empirical threshold applicable to an image obtained by a CD-SEM instrumentation such that the empirical threshold substantially corresponds to the reference critical dimension; determining a threshold applicable to a category of patterns, the threshold being determined from a plurality of empirical thresholds.

Abstract: A structure for the characterization of a tip of an atomic force microscope, the structure being produced on a substrate and including a first support element located above the substrate; a first characterization element with a constant thickness, the first characterization element being located above the first support element and having an upper flat surface and a lower flat surface covering the upper surface of the first support element with two zones extending beyond the upper surface of the first support element, each zone having a characterization surface at one end which is capable of coming into contact with a tip to be characterized, the upper surface and the lower surface of said first characterization element being parallel to the upper surface of the substrate.

Abstract: A method for characterizing an atomic force microscopy tip using a characterization structure having two inclined sidewalls opposite one another and of which at least one actual lateral distance separating the two inclined sidewalls corresponding to a given height is known, the method including scanning the surfaces of the inclined sidewalls by the tip, the scanning being carried out while the tip oscillates solely vertically; measuring, for the given height, the lateral distance separating the two inclined sidewalls, the measurement incorporating the convolution of the shape of the tip with the shape of the characterization structure; and determining a characteristic dimension of the tip as a function of the measured lateral distance, and of the actual lateral distance.

Abstract: A method for characterising an atomic force microscopy tip using a characterisation structure having two inclined sidewalls opposite one another and of which at least one actual lateral distance separating the two inclined sidewalls corresponding to a given height is known, the method including scanning the surfaces of the inclined sidewalls by the tip, the scanning being carried out while the tip oscillates solely vertically; measuring, for the given height, the lateral distance separating the two inclined sidewalls, the measurement incorporating the convolution of the shape of the tip with the shape of the characterisation structure; and determining a characteristic dimension of the tip as a function of the measured lateral distance, and of the actual lateral distance.

Abstract: The invention relates to an atomic force microscope tip characterization tool. An atomic force microscope uses a very fine exploration tip placed at the end of an elastic cantilever beam and an optical system for exploring movements of the beam in contact with a relief to be explored. The shape of the exploration tip must be known, and to this end a tool is used, placed in an atomic force microscope, the known shapes whereof are used to derive the shape of the tip. The tool of the invention includes a thin silicon beam (50) placed between two separated studs, formed on a support plate. The tip to be measured is moved between the studs remaining in contact with the beam and the measurement of the position of the tip during these movements enables the shape of the tip to be derived. The very small thickness (less than 5 nm) of the beam allows great accuracy and great reproducibility of measurement.

Abstract: The invention relates to a process for making a gate for a CMOS transistor structure, made from a stack realized on a face in a semi-conducting material of a substrate, said stack comprising a gate isolation layer, a gate material layer and a gate mask in sequence, the process comprising the following steps: a) anisotropic etching of the top part of the gate material layer not masked by the gate mask, this etching step leaving the bottom part of the gate material layer and leading to the formation of a deposit composed of etching products on the etching sides resulting from the anisotropic etching, b) treatment of the deposit composed of etching products, to make a protection layer reinforced against subsequent etching of the gate material, c) etching of the bottom part of the gate material layer as far as the gate isolation layer, this etching comprising isotropic etching of the gate material layer to make the gate shorter at the bottom than at the top.

Abstract: The invention relates to a process for making a gate for a CMOS transistor structure, made from a stack realized on a face in a semi-conducting material of a substrate, said stack comprising a gate isolation layer, a gate material layer and a gate mask in sequence, the process comprising the following steps: