Abstract: A method for capturing CO2 includes mixing pulverized coal in an alkali solution to produce a solution comprising humic acid, an alkali, and water, and capturing CO2 according to a process comprising at least one of: (1) spray drying the solution with CO2-containing gases to produce a solid carbonated sorbent comprising humic acid and carbonated alkali, (2) spray drying the solution with inert gas to produce a sorbent comprising humic acid and alkali species, and contacting the sorbent with CO2-containing gases, and (3) spray drying the solution with inert gas to produce the sorbent, chemically activating the sorbent to produce an activated sorbent, and contacting the activated sorbent with CO2-containing gases.

Abstract: A power semiconductor device having a barrier region is provided. A power unit cell of the power semiconductor device has at least two trenches that may both extend into the barrier region. The at least two trenches may both have a respective trench electrode coupled to a control terminal of the power semiconductor device. For example, the trench electrodes are structured to reduce the total gate charge of the power semiconductor device. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The barrier region can be electrically floating.

Abstract: A power semiconductor device having a barrier region is provided. A power unit cell of the power semiconductor device has at least two trenches that may both extend into the barrier region. The at least two trenches may both have a respective trench electrode coupled to a control terminal of the power semiconductor device. For example, the trench electrodes are structured to reduce the total gate charge of the power semiconductor device. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The barrier region can be electrically floating.

Abstract: The invention relates to a measuring device for absorption-spectroscopic gas measurement, the use of spinel, polycrystalline aluminum oxide or aluminum oxynitride and a method for absorption-spectroscopic gas measurement.

Abstract: A lever mechanism for sealing a telecommunications closure includes a plurality of hinge elements; a leveraging element extending upwardly from each hinge element; an arm section extending from the leveraging element; a biasing element downwardly extending from the arm section; and a handle coupled to the biasing element such that upon application of a compressive force to at least a portion of the handle, each hinge element, each leveraging element, each arm section, and each biasing element moves, allowing the lever mechanism to change from a non-actuated position to an actuated position. The lever mechanism is further configured to couple with a spring-activated element and environmentally seal the telecommunications closure.

Abstract: The disclosure relates to means and methods of treating a subject for a CLEC12A positive cancer. In some embodiments the method comprises treating the subject in need thereof with two or more administrations of a bispecific antibody that binds CD3 and CLEC12A, wherein in a first administration an first amount of the bispecific antibody is administered and wherein in each of the subsequent administrations the amount of bispecific antibody is higher than the amount of bispecific antibody in the first administration. In some embodiments CLEC12A positive cancer treatment methods are provided at intervals and dosing regimens that spare hemopoietic stem cell compartment allowing for recovery of normal CLEC12A positive hemopoietic cells.

Abstract: A power semiconductor device includes: a drift region; a plurality of IGBT cells each having a plurality of trenches extending into the drift region along a vertical direction and laterally confining at least one active mesa which includes an upper section of the drift region; and an electrically floating barrier region of an opposite conductivity type as the drift region and spatially confined, in and against the vertical direction, by the drift region. A total volume of all active mesas is divided into first and second shares, the first share not laterally overlapping with the barrier region and the second share laterally overlapping with the barrier region. The first share carries the load current at least within a range of 0% to 100% of a nominal load current. The second share carries the load current if the load current exceeds at least 0.5% of the nominal load current.

Abstract: The invention relates to a fuse, in particular SMD fuse and/or miniature fuse, with an insulating body having a cavity, a fusible conductor arranged in the insulating body and outer contact caps placed on the insulating body on the front side and electrically connected to the fusible conductor. According to the invention, the fusible conductor is fixed for positionally stable arrangement in the insulating body by means of at least one fixing means assigned to a contact cap, the fixing means is placed on the front side of the insulating body, and the fixing means is put over at least in regions from the assigned contact cap.

Abstract: The invention relates to a binder polymer obtainable by copolymerizing a monomer mixture comprising a vinyl monomer M1 and a butenolide monomer M2, wherein the vinyl monomer M1 is a vinyl ether, a vinyl ester, or a combination thereof, and wherein the butenolide monomer M2 is a 5-alkoxy-2(5H)-furanone. The invention further relates to a coating composition comprising such binder polymer and to a substrate coated with a coating deposited from such coating composition.

Abstract: A power semiconductor device includes: first and second trenches extending from a surface of a semiconductor body along a vertical direction and laterally confining a mesa region along a first lateral direction; source and body regions in the mesa region electrically connected to a first load terminal; and a first insulation layer having a plurality of insulation blocks, two of which laterally confine a contact hole. The first load terminal extends into the contact hole to contact the source and body regions at the mesa region surface. A first insulation block laterally overlaps with the first trench. A second insulation block laterally overlaps with the second trench. The first insulation block has a first lateral concentration profile of a first implantation material of the source region along the first lateral direction that is different from a corresponding second lateral concentration profile for the second insulation block.

Abstract: The invention is relates to multispecific antibodies that comprise an antigen binding site that binds an extracellular part of CD137 and an antigen binding site that binds an extracellular part of a second membrane protein for use in a method of treatment of a cancer in a subject in need thereof. The invention further relates to such multispecific antibodies and methods and other aspects related thereto.

Abstract: The disclosure relates to means and methods of treating a subject for a CLEC12A positive cancer. In some embodiments the method comprises treating the subject in need thereof with two or more administrations of a bispecific antibody that binds CD3 and CLEC12A, wherein in a first administration an first amount of the bispecific antibody is administered and wherein in each of the subsequent administrations the amount of bispecific antibody is higher than the amount of bispecific antibody in the first administration. In some embodiments CLEC12A positive cancer treatment methods are provided at intervals and dosing regimens that spare hemopoietic stem cell compartment allowing for recovery of normal CLEC12A positive hemopoietic cells.

Abstract: A method is disclosed for recording medical images of the human body or that of an animal. The method includes scanning for acquiring data and signaling the start and/or end of a manual administration of a contrast medium in temporal relation to the scan for acquiring data.

Abstract: A power semiconductor device includes a semiconductor body coupled to first and second load terminals. The body includes: at least a diode structure configured to conduct a load current between the terminals and including an anode port electrically connected to the first load terminal and a cathode port electrically connected to the second load terminal; and drift and field stop regions of the same conductivity type. The cathode port includes first port sections and second port sections with dopants of the opposite conductivity type. A transition between each of the second port sections and the field stop region forms a respective pn-junction that extends along a first lateral direction. A lateral separation distance between immediately adjacent ones of second port sections in a second group is smaller than in a first group.

Abstract: A locking ring for assembly onto a cable closure includes a locking ring includes at least two ring sections, with each ring section having at least one locking structure; and a lever that couples with the at least two ring sections. The lever includes at least one locking rib disposed therein, and the at least one locking rib is configured to engage and disengage from the at least one locking structure such that the lever moves from a closed position in which proximal ends of each ring section are substantially adjacent to an open position in which proximal ends of each ring section are separate.

Abstract: A power semiconductor device having a barrier region is provided. A power unit cell of the power semiconductor device has at least two trenches that may both extend into the barrier region. The at least two trenches may both have a respective trench electrode coupled to a control terminal of the power semiconductor device. For example, the trench electrodes are structured to reduce the total gate charge of the power semiconductor device. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The barrier region can be electrically floating.

Abstract: A method for fabricating a semiconductor device includes: forming a trench in a first major surface of a semiconductor body having a first conductivity type; forming a gate in the trench; forming a body region of a second conductivity type in the semiconductor body; implanting a second dopant species into a first region of the body region and a first dopant species into a second region of the body region, the first dopant species providing the first conductivity type, the second dopant species being different from the first dopant species and reducing the diffusion of the first dopant species in the semiconductor body; and thermally annealing the semiconductor body to form a source region that includes the first and second dopant species, and to produce a pn-junction between the source and body regions at a depth dpn from the first major surface, wherein 50 nm<dpn<300 nm.

Abstract: The invention relates to a radiation-curable coating composition comprising a 5-hydroxy or 5-alkoxy-2(5H)-furanone compound A, a compound B with two or more vinyl ether or vinyl ester groups, wherein the molar ratio of vinyl moieties in compound B and furanone moieties in compound A is at least 0.5, and wherein the coating composition is free of a compound with two or more acryloyl or methacryloyl groups. The invention further relates to a method of coating a substrate comprising applying such coating composition to a substrate and radiation-curing the coating composition to form a cured coating, and to a coated substrate obtainable by such method.

Abstract: The invention proposes a method for operating a metering system (32) with a plurality of metering valves (34, 35) for an SCR catalyst system, in which opening times for the injection of reducing agent are calculated for the metering valves (34, 35) based on a metering amount requirement. In the calculations of the opening times, a metering-valve-specific adaptation factor is used, w herein a deviation (?p) of a system pressure (pist) in the metering system (32) from a target pressure (psoll) and a weighting factor are used for calculation of the metering-valve-specific adaptation factor. The weighting factor depends on a proportion (r34, r35) of the required metering amount ((formula (I)), (formula (II)) of the respective metering valve (34,35) in relation to a total metering amount ((formula (I)), (formula (II)) of all metering valves (34, 35).

Abstract: A semiconductor device includes: a semiconductor region having charge carriers of a first conductivity type; a transistor cell in the semiconductor region; a semiconductor channel region in the transistor cell and having a first doping concentration of charge carriers of a second conductivity type, wherein a transition between the semiconductor channel region and the semiconductor region forms a first pn-junction; a semiconductor auxiliary region in the semiconductor region and having a second doping concentration of charge carriers of the second conductivity type. A transition between the semiconductor auxiliary region and semiconductor region forms a second pn-junction positioned deeper in the semiconductor region as compared to the first pn-junction.