Abstract: A boiler for heating a flow capable medium, especially for heating water, comprising a boiler housing made from plastic and a heater protruding through a mounting hole in the boiler housing into the interior of the boiler housing, being fixated in the mounting hole through a fixation means. Furthermore the interior diameter of the mounting hole in the boiler housing is at least in sections approximately identical to the outer diameter of the heater and the heater has an unheated section in the area of the mounting hole.

Abstract: A boiler for heating a flow capable medium, especially for heating water, comprising a boiler housing made from plastic and a heater protruding through a mounting hole in the boiler housing into the interior of the boiler housing, being fixated in the mounting hole through a fixation means. Furthermore the interior diameter of the mounting hole in the boiler housing is at least in sections approximately identical to the outer diameter of the heater and the heater has an unheated section in the area of the mounting hole.

Abstract: A power branching transmission suitable for motor vehicles having an internal-combustion engine which drives an input shaft of the power branching transmission has several branches comprising at least one power shift transmission with a number of gears and has an output shaft. For the comprehensive optimization of the power branching transmission, at least one of the branches is equipped with a control device by means of which, during the starting operation of the motor vehicle, the rotating direction of the output shaft can be changed, and during the starting operation and with shifted gears of the power shift transmission connected with the input shaft, by way of the control device, the rotational speed of the output shaft can be continuously influenced.

Abstract: A process for determining the effective doping agent content of hydrogen the production of semiconductors which comprises zone drawing a silicon rod of highest purity and having a known specific resistance, in the presence of hydrogen to be tested, subsequently redetermining the specific resistance of the silicon rod, and computing the concentration of the doping agent in the hydrogen used from the known relationship between the specific resistance and the amount of doping agent. By stepwise determination of the resistance along the longitudinal axis of the rod, the amount of doping agent built into the rod at different levels can thus be determined.

Abstract: Process for the manufacture of silicon of large surface area bonded to a substrate, which comprises depositing silicon to a thickness of from 30 to 500 .mu.m onto panel-shaped substrates of glassy carbon (a glass-like carbon obtained by carbonizing a spatially cross-linked synthetic resin) that are heated by direct passage of an electric current to temperatures above the melting point of silicon, and thereafter cooling the silicon to a temperature below its melting point in the direction from its free surface toward the substrate. The invention also comprises the silicon panels so made which are especially useful in the manufacture of solar cells.

Abstract: An improved process for the production of pure, elemental semiconductor material, especially silicon, of the type wherein the semiconductor material is produced by decomposition from the gaseous phase, is provided, which includes the initial step of maintaining a melt of the semiconductor material at a temperature of up to a maximum of 200.degree. C above the melting point of the material. Thereafter, at least a gaseous, decomposable compound of the semiconductor material is introduced into the melt, under a pressure of about 0.01 to 30 bar, to produce a pure, elemental semiconductor material in liquid form.

Abstract: Halogenosilanes and halogenogermanes which are contaminated by a boron-coining impurity are purified by treatment with an effective amount of a hydrated metal oxide or a hydrated silicate containing from about 3 to about 8% by weight of water, and then distilling the treated halogenosilane or halogenogermane at a temperature about 3.degree. to about 15.degree. C above its boiling temperature, and at atmosphere pressure.

Abstract: Process for determining the donor content of polycrystalline silicon of high purity to be used in the semiconductor industries, the silicon having a known acceptor content of up to 0.02 atomic % and a donor content of up to 0.1 atomic %, the determination comprising the steps of introducing a test rod into a gas-tight quartz tube of only slightly larger internal diameter than the test rod, converting the rod into the oligocrystalline state by zone drawing with a seed crystal within a streaming protective gas, forming a melting zone in the test rod travelling vertically over the entire length, measuring the resistance of the so formed oligocrystalline test rod, and calculating the donor concentration from the measured resistance, the protective gas being a noble gas with an admixture of 10 - 800 ppm of oxygen.

Abstract: Process for the determination of the boron content of pure halogensilanes pecially silicon tetrachloride and trichlorosilane, which contain up to 0.1% of atoms of acceptors and donors, which comprises the steps of converting the halogen silanes into the gaseous state in a testing apparatus by contacting said halogensilanes with an evaporator surface heated to a temperature ranging from 80.degree. C to 350.degree. C, passing the generated gases to a support heated to the decomposition temperature of the gases whereby the released silicon is deposited on the support, removing the support and the deposit thereon from the testing apparatus and determining the boron content by calculation from the measured value of the specific resistance of the support plus the deposited silicon. It should be understood that all parts of the testing apparatus which come into contact with the generated gas, with the exception of the support heated to the required deposition temperature, should be at the temperature above 80.