Patents by Inventor Johann Luft
Johann Luft has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8592236Abstract: A method for manufacturing an optically pumped surface-emitting semiconductor laser device, wherein a surface-emitting semiconductor laser layer sequence having a quantum confinement structure is applied onto a common substrate. The surface-emitting semiconductor laser layer sequence outside an intended laser region is removed and a region is exposed. An edge-emitting semiconductor layer sequence is applied onto the exposed region over the common substrate, wherein the exposed region is exposed via the removing step, and the exposed region is suitable for transmitting pump radiation into the quantum confinement structure. A current injection path is then formed in the edge-emitting semiconductor layer sequence.Type: GrantFiled: November 27, 2007Date of Patent: November 26, 2013Assignee: OSRAM GmbHInventors: Tony Albrecht, Norbert Linder, Johann Luft
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Patent number: 8115909Abstract: A sensor system with a lighting device and a detector device is specified. The lighting device is provided for emitting laser radiation of a first wavelength and laser radiation of a second wavelength different from the first. The detector device is provided for detecting electromagnetic radiation of the first and the second wavelength.Type: GrantFiled: February 26, 2009Date of Patent: February 14, 2012Assignee: Osram Opto Semiconductors GmbHInventors: Martin Rudolf Behringer, Joerg Heerlein, Johann Luft
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Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof
Patent number: 7653111Abstract: The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.Type: GrantFiled: October 12, 2005Date of Patent: January 26, 2010Assignee: Osram GmbHInventors: Tony Albrecht, Norbert Linder, Johann Luft -
Patent number: 7646799Abstract: An edge emitting semiconductor laser containing a plurality of monolithically integrated laser diodes (1, 2, 3). Each laser diode (1, 2, 3) contains an active zone (11, 12, 13), with the active zones (11, 12, 13) being in each case arranged between waveguide layers (6), the waveguide layers (6) in each case adjoining a cladding layer (7, 8) at a side remote from the active zone (11, 12, 13). The cladding layers (7, 8) comprise inner cladding layers (7), which are arranged above a bottommost active zone (11) and below a topmost active zone (13), and outer cladding layers (8) which are arranged below the bottommost active zone (11) or above the topmost active zone (13). The inner cladding layers (7) have a smaller thickness than the outer cladding layers (8).Type: GrantFiled: September 25, 2007Date of Patent: January 12, 2010Assignee: Osram Opto Semiconductors GmbHInventors: Peter Brick, Johann Luft, Martin Müller, Marc Philippens
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Publication number: 20090244515Abstract: A sensor system with a lighting device and a detector device is specified. The lighting device is provided for emitting laser radiation of a first wavelength and laser radiation of a second wavelength different from the first. The detector device is provided for detecting electromagnetic radiation of the first and the second wavelength.Type: ApplicationFiled: February 26, 2009Publication date: October 1, 2009Inventors: Martin Rudolf Behringer, Joerg Heerlein, Johann Luft
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Patent number: 7529284Abstract: An optically pumped, radiation-emitting semiconductor device having a semiconductor body which includes at least one pump radiation source (20) and a surface-emitting quantum well structure (11), the pump radiation source (20) and the quantum well structure (11) being monolithically integrated. The pump radiation source (20) generates pump radiation (2) for optically pumping the quantum well structure (11), a recess (10) for introducing the pump radiation (2) in the quantum well structure (9) being formed in the semiconductor body between the pump radiation source (20) and the quantum well structure (11).Type: GrantFiled: August 13, 2003Date of Patent: May 5, 2009Assignee: Osram Opto Semiconductors GmbHInventors: Christian Karnutsch, Norbert Linder, Johann Luft, Stephan Lutgen, Wolfgang Schmid
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Publication number: 20080123710Abstract: An edge emitting semiconductor laser containing a plurality of monolithically integrated laser diodes (1, 2, 3). Each laser diode (1, 2, 3) contains an active zone (11, 12, 13), with the active zones (11, 12, 13) being in each case arranged between waveguide layers (6), the waveguide layers (6) in each case adjoining a cladding layer (7, 8) at a side remote from the active zone (11, 12, 13). The cladding layers (7, 8) comprise inner cladding layers (7), which are arranged above a bottommost active zone (11) and below a topmost active zone (13), and outer cladding layers (8) which are arranged below the bottommost active zone (11) or above the topmost active zone (13). The inner cladding layers (7) have a smaller thickness than the outer cladding layers (8).Type: ApplicationFiled: September 25, 2007Publication date: May 29, 2008Applicant: OSRAM Opto Semiconductors GmbHInventors: Peter Brick, Johann Luft, Martin Muller, Marc Philippens
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Publication number: 20080089380Abstract: A laser arrangement comprises an optically pumped laser (2) and at least one semiconductor laser (1) which emits pump radiation (6) for pumping the optically pumped laser (2). The semiconductor laser (1) contains a plurality of monolithically integrated active zones (3, 4, 5) arranged one above another, at least two of the plurality of active zones (3, 4, 5) emitting pump radiation (6) of different wavelengths. In this way, it is possible to pump different absorption bands of the optically pumped laser (2) using a single semiconductor laser (1).Type: ApplicationFiled: September 26, 2007Publication date: April 17, 2008Applicant: OSRAM Opto Semiconductors GmbHInventors: Harald Konig, Johann Luft, Martin Muller, Marc Philippens
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Publication number: 20080090316Abstract: A method for manufacturing an optically pumped surface-emitting semiconductor laser device, wherein a surface-emitting semiconductor laser layer sequence having a quantum confinement structure is applied onto a common substrate. The surface-emitting semiconductor laser layer sequence outside an intended laser region is removed and a region is exposed. An edge-emitting semiconductor layer sequence is applied onto the exposed region over the common substrate, wherein the exposed region is exposed via the removing step, and the exposed region is suitable for transmitting pump radiation into the quantum confinement structure. A current injection path is then formed in the edge-emitting semiconductor layer sequence.Type: ApplicationFiled: November 27, 2007Publication date: April 17, 2008Inventors: Tony Albrecht, Norbert Linder, Johann Luft
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Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof
Patent number: 7300808Abstract: The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.Type: GrantFiled: July 29, 2004Date of Patent: November 27, 2007Assignee: Osram GmbHInventors: Tony Albrecht, Norbert Linder, Johann Luft -
Patent number: 7271419Abstract: A laser device having a semiconductor body (1), which has a plurality of active layers (5, 9) arranged vertically one above the other and serving for generating laser radiation. The active layers are subdivided in the transverse direction into a plurality of emission zones (15) and are electrically connected in series in the vertical direction. The semiconductor body (1) is formed in monolithic integrated fashion, and a cooling element (2) is provided on which the semiconductor body (1) is arranged.Type: GrantFiled: August 27, 2004Date of Patent: September 18, 2007Assignee: Osram Opto Semiconductor GmbHInventors: Martin Behringer, Johann Luft, Bruno Acklin
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Patent number: 7260129Abstract: A device for emission of laser radiation includes at least one semiconductor laser having a resonator and a pumped active zone disposed within the resonator. The zone is subdivided into at least two spatially separated active zones by free-radiation regions without lateral wave guidance. Preferably, the laser is at least two semiconductor lasers disposed in series, a row, or a line, each having an antireflection coating on at least one side. The lasers have outer mirror elements at an end of the lasers disposed in series and the outer mirror elements form the resonator. A laser configuration includes two opposite semiconductor lasers from which a fundamental mode is in each case imaged into the active zone of the opposite semiconductor laser. The laser configuration has an emerging laser beam with little divergence.Type: GrantFiled: February 9, 2004Date of Patent: August 21, 2007Assignee: Osram Opto Semiconductors GmbHInventors: Martin Behringer, Franz Eberhard, Johann Luft
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Publication number: 20060104327Abstract: An optically pumped, radiation-emitting semiconductor device having a semiconductor body which includes at least one pump radiation source (20) and a surface-emitting quantum well structure (11), the pump radiation source (20) and the quantum well structure (11) being monolithically integrated. The pump radiation source (20) generates pump radiation (2) for optically pumping the quantum well structure (11), a recess (10) for introducing the pump radiation (2) in the quantum well structure (9) being formed in the semiconductor body between the pump radiation source (20) and the quantum well structure (11).Type: ApplicationFiled: August 13, 2003Publication date: May 18, 2006Inventors: Christian Karnutsch, Norbert Linder, Johann Luft, Stephan Lutgen, Wolfgang Schmid
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Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof
Publication number: 20060039437Abstract: The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.Type: ApplicationFiled: October 12, 2005Publication date: February 23, 2006Inventors: Tony Albrecht, Norbert Linder, Johann Luft -
Publication number: 20050259700Abstract: In an optically pumpable surface-emitting semiconductor laser device with a vertical emitter with a radiation-generating active layer, at least one modulation radiation source for modulating the output power of the surface-emitting semiconductor device is provided. The modulation radiation source is formed by an edge-emitting semiconductor structure with an active layer, and which is disposed such that during operation it radiates into the radiation-generating active layer of the vertical emitter. This produces an easily modulatable surface-emitting laser source of high power and high beam quality. A pumping radiation source for optically pumping the active layer of the vertical emitter is preferably provided in the semiconductor laser device.Type: ApplicationFiled: July 22, 2005Publication date: November 24, 2005Inventors: Werner Spath, Johann Luft, Stephan Lutgen, Norbert Linder, Tony Albrecht, Ulrich Steegmuller
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Patent number: 6956881Abstract: The present invention relates to an arrangement of semiconductor diode lasers stacked on top of one another, which is arranged on a substrate (1). A first diode laser (12) is arranged on the substrate (1), and a second diode laser (13) is arranged on the first diode laser (12). Between the first diode laser (12) and the second diode laser (13) there is a contact layer (6). The contact layer (6) comprises a first conductive layer (18) of a first conduction type and a second conductive layer (20) of a second conduction type and an interlayer (19) which is arranged between the first and second conductive layers (18, 20).Type: GrantFiled: November 20, 2001Date of Patent: October 18, 2005Assignee: Osram Opto Semiconductors GmbHInventors: Martin Behringer, Karl Ebeling, Thomas Knödl, Johann Luft
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Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof
Patent number: 6954479Abstract: The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.Type: GrantFiled: April 2, 2001Date of Patent: October 11, 2005Assignee: OSRAM GmbHInventors: Tony Albrecht, Norbert Linder, Johann Luft -
Patent number: 6947460Abstract: In an optically pumpable surface-emitting semiconductor laser device with a vertical emitter with a radiation-generating active layer, at least one modulation radiation source for modulating the output power of the surface-emitting semiconductor device is provided. The modulation radiation source is formed by an edge-emitting semiconductor structure with an active layer, and which is disposed such that during operation it radiates into the radiation-generating active layer of the vertical emitter. This produces an easily modulatable surface-emitting laser source of high power and high beam quality. A pumping radiation source for optically pumping the active layer of the vertical emitter is preferably provided in the semiconductor laser device.Type: GrantFiled: March 28, 2003Date of Patent: September 20, 2005Assignee: Osram GmbHInventors: Werner Späth, Johann Luft, Stephan Lutgen, Norbert Linder, Tony Albrecht, Ulrich Steegmüller
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Patent number: 6944199Abstract: A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.Type: GrantFiled: June 12, 2003Date of Patent: September 13, 2005Assignee: Osram GmbHInventors: Bruno Acklin, Martin Behringer, Karl Ebeling, Christian Hanke, Jörg Heerlein, Lutz Korte, Johann Luft, Karl-Heinz Schlereth, Werner Späth, Zeljko Spika
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Publication number: 20050087735Abstract: A laser device having a semiconductor body (1), which has a plurality of active layers (5, 9) arranged vertically one above the other and serving for generating laser radiation. The active layers are subdivided in the transverse direction into a plurality of emission zones (15) and are electrically connected in series in the vertical direction. The semiconductor body (1) is formed in monolithic integrated fashion, and a cooling element (2) is provided on which the semiconductor body (1) is arranged.Type: ApplicationFiled: August 27, 2004Publication date: April 28, 2005Applicant: Osram Opto Semiconductors GmbHInventors: Martin Behringer, Johann Luft, Bruno Acklin