Abstract: A method for manufacturing an optically pumped surface-emitting semiconductor laser device, wherein a surface-emitting semiconductor laser layer sequence having a quantum confinement structure is applied onto a common substrate. The surface-emitting semiconductor laser layer sequence outside an intended laser region is removed and a region is exposed. An edge-emitting semiconductor layer sequence is applied onto the exposed region over the common substrate, wherein the exposed region is exposed via the removing step, and the exposed region is suitable for transmitting pump radiation into the quantum confinement structure. A current injection path is then formed in the edge-emitting semiconductor layer sequence.

Abstract: A sensor system with a lighting device and a detector device is specified. The lighting device is provided for emitting laser radiation of a first wavelength and laser radiation of a second wavelength different from the first. The detector device is provided for detecting electromagnetic radiation of the first and the second wavelength.

Abstract: Methods and apparatus to support dynamic allocation of traffic management resources in a network element. Shared pools of traffic management resources comprising an aggregation of local line card resources distributed across the line cards or a network element maintained by apparatus software. Incoming packets are classified into subscriber flows using a hierarchical classification scheme. In view of subscriber services and flow application types, traffic management resources are dynamically allocated from the shared pools, and traffic management policies associated with the subscriber services and application types are applied to the subscriber flows via the allocated resources. In response to detecting a subscriber flow has terminated, the allocated resources are release and made available to be dynamically re-allocated to subsequent subscriber flows.

Abstract: A method and apparatus for an application aware traffic shaping service node architecture is described. One embodiment of the invention, the service node architecture includes a set of one or more line cards, a set of one or more processor cards and a full mesh communication infrastructure coupling the sets of line and processor cards. Each link coupling the sets of line and processor cards is of equal capacity. A line card includes a physical interface and a set of one or policy network processors, with the network processors performing deep packet inspection on incoming traffic and shaping outgoing traffic. Processors cards include a set of one or more policy generating processors. According to another embodiment of the invention, the service node generates a set of statistics based on the incoming traffic and continually updates, in real-time, traffic shaping policies based on the set of statistics.

Abstract: The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.

Abstract: An edge emitting semiconductor laser containing a plurality of monolithically integrated laser diodes (1, 2, 3). Each laser diode (1, 2, 3) contains an active zone (11, 12, 13), with the active zones (11, 12, 13) being in each case arranged between waveguide layers (6), the waveguide layers (6) in each case adjoining a cladding layer (7, 8) at a side remote from the active zone (11, 12, 13). The cladding layers (7, 8) comprise inner cladding layers (7), which are arranged above a bottommost active zone (11) and below a topmost active zone (13), and outer cladding layers (8) which are arranged below the bottommost active zone (11) or above the topmost active zone (13). The inner cladding layers (7) have a smaller thickness than the outer cladding layers (8).

Abstract: A method and apparatus for an application aware traffic shaping service node positioned between the access and core networks is described. One embodiment of the invention enforces a per subscriber, per application traffic policy for network traffic between one or more subscribers communicatively connected through an access network and a set of one or more service providers communicatively connected through a core network. According to another embodiment of the invention enforcement of the per subscriber, per application traffic policy comprises classifying the network traffic into application level subscriber flows, maintaining real-time statistics on the application level subscriber flows and overall network element congestion, updating, in real-time, the per subscriber, per application traffic policy based on the real-time statistics and restricting bandwidth and dropping packets on the application level subscriber flows as necessary to enforce the per subscriber, per application traffic policy.

Abstract: A sensor system with a lighting device and a detector device is specified. The lighting device is provided for emitting laser radiation of a first wavelength and laser radiation of a second wavelength different from the first. The detector device is provided for detecting electromagnetic radiation of the first and the second wavelength.

Abstract: An optically pumped, radiation-emitting semiconductor device having a semiconductor body which includes at least one pump radiation source (20) and a surface-emitting quantum well structure (11), the pump radiation source (20) and the quantum well structure (11) being monolithically integrated. The pump radiation source (20) generates pump radiation (2) for optically pumping the quantum well structure (11), a recess (10) for introducing the pump radiation (2) in the quantum well structure (9) being formed in the semiconductor body between the pump radiation source (20) and the quantum well structure (11).

Abstract: Methods and apparatus for optimum matching of a traffic profile with an individual traffic flow using flow bifurcation and analysis. Bifurcation and duplication of packets that make up a flow received at an ingress element are forwarded to each of egress traffic and computation processor resources, such that egress traffic operations and traffic analysis operations may be performed concurrently without introducing jitter or delay in either bifurcated processing path. The traffic analysis includes maintaining flow statistics, flow stateful information and classifying the flow as a particular application traffic type. The optimum traffic profile for this application traffic type is then selected and applied to the individual flow. The traffic analysis data is forwarded to ingress and egress processing elements in real time, and ingress and egress traffic processing operations are dynamically adjusted in view of the traffic analysis data.

Abstract: An edge emitting semiconductor laser containing a plurality of monolithically integrated laser diodes (1, 2, 3). Each laser diode (1, 2, 3) contains an active zone (11, 12, 13), with the active zones (11, 12, 13) being in each case arranged between waveguide layers (6), the waveguide layers (6) in each case adjoining a cladding layer (7, 8) at a side remote from the active zone (11, 12, 13). The cladding layers (7, 8) comprise inner cladding layers (7), which are arranged above a bottommost active zone (11) and below a topmost active zone (13), and outer cladding layers (8) which are arranged below the bottommost active zone (11) or above the topmost active zone (13). The inner cladding layers (7) have a smaller thickness than the outer cladding layers (8).

Abstract: A laser arrangement comprises an optically pumped laser (2) and at least one semiconductor laser (1) which emits pump radiation (6) for pumping the optically pumped laser (2). The semiconductor laser (1) contains a plurality of monolithically integrated active zones (3, 4, 5) arranged one above another, at least two of the plurality of active zones (3, 4, 5) emitting pump radiation (6) of different wavelengths. In this way, it is possible to pump different absorption bands of the optically pumped laser (2) using a single semiconductor laser (1).

Abstract: A method for manufacturing an optically pumped surface-emitting semiconductor laser device, wherein a surface-emitting semiconductor laser layer sequence having a quantum confinement structure is applied onto a common substrate. The surface-emitting semiconductor laser layer sequence outside an intended laser region is removed and a region is exposed. An edge-emitting semiconductor layer sequence is applied onto the exposed region over the common substrate, wherein the exposed region is exposed via the removing step, and the exposed region is suitable for transmitting pump radiation into the quantum confinement structure. A current injection path is then formed in the edge-emitting semiconductor layer sequence.

Abstract: The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.

Abstract: A laser device having a semiconductor body (1), which has a plurality of active layers (5, 9) arranged vertically one above the other and serving for generating laser radiation. The active layers are subdivided in the transverse direction into a plurality of emission zones (15) and are electrically connected in series in the vertical direction. The semiconductor body (1) is formed in monolithic integrated fashion, and a cooling element (2) is provided on which the semiconductor body (1) is arranged.

Abstract: A device for emission of laser radiation includes at least one semiconductor laser having a resonator and a pumped active zone disposed within the resonator. The zone is subdivided into at least two spatially separated active zones by free-radiation regions without lateral wave guidance. Preferably, the laser is at least two semiconductor lasers disposed in series, a row, or a line, each having an antireflection coating on at least one side. The lasers have outer mirror elements at an end of the lasers disposed in series and the outer mirror elements form the resonator. A laser configuration includes two opposite semiconductor lasers from which a fundamental mode is in each case imaged into the active zone of the opposite semiconductor laser. The laser configuration has an emerging laser beam with little divergence.

Abstract: An optically pumped, radiation-emitting semiconductor device having a semiconductor body which includes at least one pump radiation source (20) and a surface-emitting quantum well structure (11), the pump radiation source (20) and the quantum well structure (11) being monolithically integrated. The pump radiation source (20) generates pump radiation (2) for optically pumping the quantum well structure (11), a recess (10) for introducing the pump radiation (2) in the quantum well structure (9) being formed in the semiconductor body between the pump radiation source (20) and the quantum well structure (11).

Abstract: The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.

Abstract: In an optically pumpable surface-emitting semiconductor laser device with a vertical emitter with a radiation-generating active layer, at least one modulation radiation source for modulating the output power of the surface-emitting semiconductor device is provided. The modulation radiation source is formed by an edge-emitting semiconductor structure with an active layer, and which is disposed such that during operation it radiates into the radiation-generating active layer of the vertical emitter. This produces an easily modulatable surface-emitting laser source of high power and high beam quality. A pumping radiation source for optically pumping the active layer of the vertical emitter is preferably provided in the semiconductor laser device.

Abstract: The present invention relates to an arrangement of semiconductor diode lasers stacked on top of one another, which is arranged on a substrate (1). A first diode laser (12) is arranged on the substrate (1), and a second diode laser (13) is arranged on the first diode laser (12). Between the first diode laser (12) and the second diode laser (13) there is a contact layer (6). The contact layer (6) comprises a first conductive layer (18) of a first conduction type and a second conductive layer (20) of a second conduction type and an interlayer (19) which is arranged between the first and second conductive layers (18, 20).