Abstract: An integrated circuit is disclosed, the integrated circuit comprises: a vertically integrated bipolar transistor; and at least one emitter resistor, which is connected conductively to an emitter semiconductor region of the vertically integrated bipolar transistor. A collector semiconductor region, a base semiconductor region, and the emitter semiconductor region are placed vertically one over another at least in areas and formed as a single crystal. A resistance region of the emitter resistor is placed above the emitter semiconductor region and formed as a single crystal, and the resistance region, at least in areas, has a higher film resistance than the emitter semiconductor region.

Abstract: A method for manufacturing integrated circuits with silicon-germanium heterobipolar transistors is provided, wherein the manufacturing process is divided into several process modules, whereby at least one collector module for the production of a collector region, one base module for the production of a base region, and one emitter module for the production of an emitter region are defined as process modules and whereby the process modules have such process interfaces relative to each other, that to develop a technology version different from the existing technology version at least one process step of a process module is changed independent of the process steps of the other process modules while the process interface is maintained.