Abstract: A calibration standard comprises a supporting structure (1) of single crystal material with at least one pair of different kinds of structures consisting of a raised line (2) and a trench (3). These structures have the identical width in the range of about 500 nm. The single crystal material preferably is silicon with (110)-orientation.

Abstract: A calibration standard comprises a supporting structure (1) of single crystal material with at least one pair of different kinds of structures consisting of a raised line (2) and a trench (3). These structures have the identical width in the range of about 500 nm. The single crystal material preferably is silicon with (110)-orientation.

Abstract: A method for measuring the width of a tip in an Atomic Force Microscope/Scanning Tunneling Microscope using a calibration standard is provided. The method incorporates the steps of providing a tip, measuring the width b1 of a first kind of structure, and measuring the width b2 of a second kind of structure. The steps of measuring comprise the steps of profiling the first and second kinds of structures with a tip and calculating the width of the tip as a function of the measured widths b1 and b2. The calibration standard comprises the first and second kinds of structures and may be, for example, a trench and a raised line which have substantially the same width.

Abstract: A calibration standard comprises a supporting structure (1) of single crystal material with at least one pair of different kinds of structures consisting of a raised line (2) and a trench (3). These structures have the identical width in the range of about 500 nm. The single crystal material preferably is silicon with (110)-orientation.

Abstract: The present invention relates to a process for fabricating silicon carbide films and membranes with a predetermined stress via control of the deposition parameters which comprises the following steps:a) introducing a gas mixture of silane (SiH.sub.4)/helium and ethylene at flow rates of about 1000 sccm/min. and about 10 sccm/min. into a reaction chamber;b) reacting the silane and ethylene at a temperature >400.degree. C., and in a total pressure range of about 26.6 to 266 Pa, at an RF power <100 W at 13.56, MHz, the reaction between said silane and ethylene being initiated and enhanced by glow discharge.In a preferred embodiment, the intrinsic film stress is tensile, and the silane and ethylene are reacted at a temperature of about 500.degree. C., in a total pressure range exceeding 106.4, Pa, and at an RF power of 75 W at 13.56 MHz.

Abstract: A micromechanical sensor is described for the AFM/STM profilometry, incorporating a cantilever beam with at least one tip at its end and a mounting block at the opposite end. A method is described incorporating the steps of coating a wafer substrate with an insulating layer, forming a mask in the insulating layer, etching a trench in the wafer substrate, removing the insulating layer, coating the desired cantilever beam and tip material, respectively, etching the cantilever beam and tip material, and removing at least a portion of the supporting wafer material from the bottom side. The invention overcomes the problem of forming a micromechanical sensor having a cantilever beam, a tip with a predetermined shape and a mounting block.

Abstract: The apparatus comprises a plasma deposition chamber having a port through which a fluoro compound etch gas is introduced into the chamber and a port through which the chamber is evacuated, refractory metal cathode configuration within the chamber, an anode within the chamber, and energy impression means for ionizing the etch gas in the chamber, whereby the etch gas reacts with the refractory metal cathode configuration to convert the metal to gaseous refractory metal fluorides which decompose to form a deposited layer on a semiconductor substrate positioned on the anode.

Abstract: The invention comprises a PECVD method for the deposition of refractory metal layers or layers containing refractory metal by the in situ formation of refractory metal fluorides. For this purpose, an etch gas, such as CF.sub.4, NF.sub.3, SF.sub.6 etc., is introduced into a plasma deposition chamber which comprises a cathode, with a refractory metal sheet electrically connected thereto, and an anode carrying wafers.In a preferred example, CF.sub.6 is introduced into the chamber and, via a gas shower, into a cathode region. After ignition of a plasma, the ionized etch gas acts on a tungsten sheet, generating WF.sub.x ions that diffuse towards a target with wafers. The WF.sub.x ions thus produced are suitable for the deposition of a tungsten layer or a layer containing tungsten on silicon wafers.

Abstract: According to a preferred embodiment, arbitrarily shaped holes are fabricated in 0.1 to 2 mm thick plates of polyoxymethylene homo- or copolymers. For that purpose, the polymeric substrate is photoresist-coated on either side; the desired pattern is simultaneously applied to both the front and the back side of the photoresist layers by imagewise exposure at optimum mask alignment; the photoresist layers are developed and blanket-exposed; the resultant photoresist structures are treated with a cyclic organosilicon compound and postbaked; the through holes are produced by sequential reactive ion etching of the polyoxymethylene from the front and the back side, each time down to a depth of about 2/3 of the substrate thickness; and the silylated photoresist masks are stripped from the front and the back side of the substrate.