Abstract: The invention describes a light emitting semiconductor device (100) comprising a substrate (120), a light emitting layer structure (155) and an AlGaAs getter layer (190) for reducing an impurity in the light emitting layer structure (155), the light emitting layer structure (155) comprising an active layer (140) and layers of varying Aluminum content, wherein the growth conditions of the layers of the light emitting layer structure (155) comprising Aluminum are different in comparison to the growth conditions of the AlGaAs getter layer (190). The AlGaAs getter layer (190) enables a reduction of the concentration of impurities like Sulfur etc. in the gas phase of a deposition equipment or growth reactor. The reduction of such impurities reduces the probability of incorporation of the impurities in the light emitting layer structure (155) which may affect the lifetime of the light emitting semiconductor device (100).

Abstract: The invention describes a heating system (100) and a corresponding method of heating a heating surface (180) of an object (150, 950) to a processing temperature of at least 100° C., wherein the heating system (100) comprises semiconductor light sources (115), and wherein the heating system (100) is adapted to heat an area element of the heating surface (180) with at least 50 semiconductor light sources (115) at the same time. The heating system (100) may be part of a reactor for processing semiconductor structures. The light emitted by means of the semiconductor light sources (115) overlaps at the heating surface (180). Differences of the characteristic of one single semiconductor light source (115) may be blurred at the heating surface (180) such that a homogeneous temperature distribution across a processing surface of a, for example, wafer may be enabled.

Abstract: The invention describes a light emitting semiconductor device (100) comprising a substrate (120), a light emitting layer structure (155) and an AlGaAs getter layer (190) for reducing an impurity in the light emitting layer structure (155), the light emitting layer structure (155) comprising an active layer (140) and layers of varying Aluminum content, wherein the growth conditions of the layers of the light emitting layer structure (155) comprising Aluminum are different in comparison to the growth conditions of the AlGaAs getter layer (190). The AlGaAs getter layer (190) enables a reduction of the concentration of impurities like Sulfur etc. in the gas phase of a deposition equipment or growth reactor. The reduction of such impurities reduces the probability of incorporation of the impurities in the light emitting layer structure (155) which may affect the lifetime of the light emitting semiconductor device (100).

Abstract: The invention describes a heating system (100) and a corresponding method of heating a heating surface (180) of an object (150, 950) to a processing temperature of at least 100° C., wherein the heating system (100) comprises semiconductor light sources (115), and wherein the heating system (100) is adapted to heat an area element of the heating surface (180) with at least 50 semiconductor light sources (115) at the same time. The heating system (100) may be part of a reactor for processing semiconductor structures. The light emitted by means of the semiconductor light sources (115) overlaps at the heating surface (180). Differences of the characteristic of one single semiconductor light source (115) may be blurred at the heating surface (180) such that a homogeneous temperature distribution across a processing surface of a, for example, wafer may be enabled.

Abstract: An optical sensor (600) for detecting the movement of an object relative to the position of the optical sensor (600), using self-mixing interference, is described. The optical sensor (600) comprises a laser (100), a detector (200) and a filter device (500). The filter device (500) suppresses measurement signals generated by means of the detector (200) when movements of the object at a velocity below a defined threshold value cause the measurement signals. The optical sensor (600) may be used in a switch in order to enable selective switching depending on the velocity of the movement of the object.