Patents by Inventor Johannes A. A. van Gils

Johannes A. A. van Gils has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11143969
    Abstract: A method of performance testing working parameters of a fluid handing structure in an immersion lithographic apparatus, the method including: placing a test substrate having an upper surface with a first portion with a resist defining the upper surface and a second portion with a material different from the resist defining the rest of the upper surface on a table in the immersion lithographic apparatus, confining liquid on a region of an upper surface of the table and/or the upper surface of the test substrate by operating the fluid handing structure using the associated working parameters, moving the table such that the region moves from the second portion to the first portion, and detecting change to and/or residue on the first portion as a result of liquid being left behind on the first portion during the moving.
    Type: Grant
    Filed: March 9, 2018
    Date of Patent: October 12, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Giovanni Luca Gattobigio, Nirupam Banerjee, Johan Franciscus Maria Beckers, Erik Henricus Egidius Catharina Eummelen, Ronald Frank Kox, Theodorus Wilhelmus Polet, Cornelius Maria Rops, Mike Paulus Johannes Van Gils, Wouterus Jozephus Johannes Van Sluisveld, Rik Vangheluwe
  • Publication number: 20200150545
    Abstract: A method of performance testing working parameters of a fluid handing structure in an immersion lithographic apparatus, the method including: placing a test substrate having an upper surface with a first portion with a resist defining the upper surface and a second portion with a material different from the resist defining the rest of the upper surface on a table in the immersion lithographic apparatus, confining liquid on a region of an upper surface of the table and/or the upper surface of the test substrate by operating the fluid handing structure using the associated working parameters, moving the table such that the region moves from the second portion to the first portion, and detecting change to and/or residue on the first portion as a result of liquid being left behind on the first portion during the moving.
    Type: Application
    Filed: March 9, 2018
    Publication date: May 14, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Giovanni Luca GATTOBIGIO, Nirupam BANERJEE, Johan Franciscus Maria BECKERS, Erik Henricus Egidius Catharina EUMMELEN, Ronald Frank KOX, Theodoras Wilhelmus POLET, Cornelius Maria ROPS, Mike Paulus Johannes VAN GILS, Wouterus Jozephus Johannes VAN SLUISVELD, Rik VANGHELUWE
  • Patent number: 4716446
    Abstract: A semiconductor device comprising a field effect transistor of the lateral or vertical DMOST type having a source zone of the one conductivity type, an adjoining channel region of the other conductivity type, a drain zone of the one conductivity type and a weakly doped drift region located between the drain zone and the channel region. According to the invention a second gate electrode located on the side of the drain zone and separated from the first gate electrode is disposed on the insulating layer above the channel zone behind the first gate electrode located on the side of the source zone. The length L.sub.2 of the part of the second gate electrode located above the channel zone is at least equal to that of the part of the first gate electrode located above the channel zone. As a result, a high value of the mutual conductance g.sub.m as well as good linearity can be obtained.
    Type: Grant
    Filed: June 9, 1986
    Date of Patent: December 29, 1987
    Assignee: U.S. Philips Corporation
    Inventors: Leonard J. M. Esser, Petrus J. A. M. Van de Wiel, Leonardus A. Daverveld, Johannes A. A. Van Gils
  • Patent number: 4360823
    Abstract: A semiconductor device includes a first metallization pattern which is sunken into a portion of a first insulating layer on the semiconductor body. This first metallization pattern is sunken through only a part of the thickness of the first layer and its surface substantially coincides with that of the first layer. The first metallization pattern and first insulating layer are covered with a second insulating layer, and a second metallization pattern is provided on the second insulating layer. In order to provide contact with desired regions of the semiconductor device, the second metallization pattern extends through contact holes in the underlying second layer to provide the desired electrical connections. This configuration results in a flatter, more efficient and at the same time a more reliable multiple-layer metallization system.
    Type: Grant
    Filed: March 3, 1980
    Date of Patent: November 23, 1982
    Assignee: U.S. Philips Corporation
    Inventor: Johannes A. A. van Gils
  • Patent number: 4199378
    Abstract: A method of manufacturing LOCOS transistors in which base doping, emitter doping and emitter metallization are provided via the same aperture. Problems at the edge of the sunken oxide are eliminated by a two-stage doping technique so that the channel stopper diffusion in the epitaxial layer may be omitted, which presents particular advantages in the manufacture of I.sup.2 L devices.
    Type: Grant
    Filed: August 18, 1978
    Date of Patent: April 22, 1980
    Assignee: U.S. Philips Corporation
    Inventor: Johannes A. A. van Gils