Abstract: A lithographic apparatus is described having a liquid supply system configured to at least partly fill a space between a projection system of the lithographic apparatus and a substrate with liquid, a barrier member arranged to substantially contain the liquid within the space, and one or more elements to control and/or compensate for evaporation of liquid from the substrate.

Abstract: A lithographic apparatus is described having a liquid supply system configured to at least partly fill a space between a projection system of the lithographic apparatus and a substrate with liquid, a barrier member arranged to substantially contain the liquid within the space, and one or more elements to control and/or compensate for evaporation of liquid from the substrate.

Abstract: During a multiple patterning process every nth element of the pattern is removed. The removal of the elements of the patterns happens after the pattern has been printed into the radiation sensitive material or etched into substrate. Advantageously, the original mask is not varied, and another exposure step is used to remove the elements of the pattern.

Abstract: A plurality of targets including a second population superimposed on a first population are formed. In the first target the second population has an asymmetry with respect to the first population. In the second target the second population has a different asymmetry with respect to the first population. Reflected radiation is detected from both the targets and used to determine different characteristics of the underlying populations.

Abstract: A method for improving the uniformity of a lithographic process. In one aspect, the probability density function of a first and second lithographic apparatus are matched by providing a continuous z-motion to a stage in the first lithographic apparatus during substrate exposure. Preferably, the z-motion is characterized by a normally distributed function, wherein the effective probability density function of the first apparatus is substantially similar to the probability density function of the second apparatus.

Abstract: A method is provided wherein a lithographic projection apparatus is used to print a series of test patterns on a test substrate to measure printed critical dimension as function of exposure dose setting and focus setting. A full-substrate analysis of measured critical dimension data is modeled by a response model of critical dimension. The response model includes an additive term which expresses a spatial variability of the response with respect to the surface of the test substrate. The method further includes fitting the model by fitting model parameters using measured critical dimension data, and controlling critical dimension using the fitted model.

Abstract: A method for providing a pattern on a substrate is disclosed. The method includes providing a first pattern in a first layer of photoresist and a first layer of bottom anti-reflective coating material on the substrate, etching the first pattern into the substrate, providing a second layer of photoresist and a second layer of bottom anti-reflective coating material on the substrate, providing a second pattern in the second layers of photoresist and bottom anti-reflective coating material, and etching the second pattern into the substrate, the first and second patterns on the substrate together defining the pattern.

Abstract: A method of measuring overlay between a first structure and a second structure on a substrate is provided. The structures include equidistant elements, such as parallel lines, wherein the equidistant elements of the first and second structure alternate. A design width CD1 of the elements of the first structure is different from a design width CD2 of the elements of the second structure. The difference in design width can be used to identify measurement points having incorrectly measured overlay errors.

Abstract: A method of inspecting a substrate with first and second layers thereon is disclosed. The method includes directing a beam of electromagnetic radiation at an acute angle towards an edge of the layers, detecting scattered and/or reflected electromagnetic radiation, and establishing, from results of the detecting, whether an edge of the second layer overlaps an edge of the first layer.

Abstract: A double patterning process for printing dense lines is provided. In a first step, a first semi dense pattern of lines is printed in a first resist material layer overlaying a substrate provided with a bottom anti-reflection coating. In a second step, a second semi dense pattern of lines is printed in a second resist material layer provided over the cleared area. The first and second semi dense line patterns are positioned in interleaved position, to provide a desired dense pattern of lines and spaces. After development of the first resist material and before providing the second resist material to the substrate, a surface conditioning of the bottom anti-reflection coating is applied to the cleared area between lines of first resist material. The surface conditioning step is arranged to improve adhesion of a feature of second resist material to the surface of the cleared area.

Abstract: A lithographic apparatus having a controller that sets at least one lithographic apparatus parameter such that the difference between the critical dimension of pattern features formed on the substrate in regions of relatively high and relatively low pattern feature density is minimized for an area on the substrate on which a patterned beam of radiation is to be projected and which re-sets the at least one lithographic apparatus parameter during a time period between the times of projection of the patterned radiation beam onto two areas of the substrate.

Abstract: A method is provided wherein a lithographic projection apparatus is used to print a series of test patterns on a test substrate to measure printed critical dimension as function of exposure dose setting and focus setting. A full-substrate analysis of measured critical dimension data is modeled by a response model of critical dimension. The response model includes an additive term which expresses a spatial variability of the response with respect to the surface of the test substrate. The method further includes fitting the model by fitting model parameters using measured critical dimension data, and controlling critical dimension using the fitted model.

Abstract: An immersion lithographic apparatus provides an immersion liquid including photosensitive material(s) configured to form a patterned film on the surface of a substrate on exposure to a radiation beam. Irradiation through the immersion liquid onto a substrate leads to deposition of a film on the substrate. Film formation occurs only in the photoirradiated region, so that the film formed has a pattern corresponding to the pattern of the radiation.