Abstract: The disclosure relates to a method for manufacturing an object with miniaturized structures. The method involves processing the object by supplying reaction gas during concurrent directing an electron beam onto a location to be processed, to deposit material or ablate material; and inspecting the object by scanning the surface of the object with an electron beam and leading generated backscattered electrons and secondary electrons to an energy selector, reflecting the secondary electrons from the energy selector, detecting the backscattered electrons passing the energy selector and generating an electron to microscopic image of the scanned region in dependence on the detected backscattered electrons; and examining the generated electron microscopic image and deciding whether further depositing or ablating of material should be carried out. The disclosure also relates to an electron microscope and a processing system which are adapted for performing the method.

Abstract: The disclosure relates to a method for manufacturing an object with miniaturized structures. The method involves processing the object by supplying reaction gas during concurrent directing an electron beam onto a location to be processed, to deposit material or ablate material; and inspecting the object by scanning the surface of the object with an electron beam and leading generated backscattered electrons and secondary electrons to an energy selector, reflecting the secondary electrons from the energy selector, detecting the backscattered electrons passing the energy selector and generating an electron to microscopic image of the scanned region in dependence on the detected backscattered electrons; and examining the generated electron microscopic image and deciding whether further depositing or ablating of material should be carried out. The disclosure also relates to an electron microscope and a processing system which are adapted for performing the method.

Abstract: The disclosure relates to a method for manufacturing an object with miniaturized structures. The method involves processing the object by supplying reaction gas during concurrent directing an electron beam onto a location to be processed, to deposit material or ablate material; and inspecting the object by scanning the surface of the object with an electron beam and leading generated backscattered electrons and secondary electrons to an energy selector, reflecting the secondary electrons from the energy selector, detecting the backscattered electrons passing the energy selector and generating an electron microscopic image of the scanned region in dependence on the detected backscattered electrons; and examining the generated electron microscopic image and deciding whether further depositing or ablating of material should be carried out. The disclosure also relates to an electron microscope and a processing system which are adapted for performing the method.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: The disclosure relates to a method for manufacturing an object with miniaturized structures. The method involves processing the object by supplying reaction gas during concurrent directing an electron beam onto a location to be processed, to deposit material or ablate material; and inspecting the object by scanning the surface of the object with an electron beam and leading generated backscattered electrons and secondary electrons to an energy selector, reflecting the secondary electrons from the energy selector, detecting the backscattered electrons passing the energy selector and generating an electron microscopic image of the scanned region in dependence on the detected backscattered electrons; and examining the generated electron microscopic image and deciding whether further depositing or ablating of material should be carried out. The disclosure also relates to an electron microscope and a processing system which are adapted for performing the method.

Abstract: With a detector system for the specimen chamber of a scanning electron microscope, signals are simultaneously detected in transmission which signals correspond to a light field contrast and a dark field contrast. The detector system (14) includes four detectors (15 to 18) in a plane (25) between which an aperture (19) for free access of electrons is located. Behind the aperture (19), a further detector (27) is arranged in a second plane (26). The detectors are preferably diodes. The detectors (15, 16, 17, 18) in the first plane (25), which is closer to the specimen, serve to generate signals which correspond to a dark field contrast. The further detector (27), more distant from the specimen, detects signals corresponding to a light field contrast. Large dead spaces, which are not sensitive to electrons, between the diodes and around the aperture (19), can be avoided by the offset arrangement of four diodes (15, 16, 17, 18) in the first plane (25).

Abstract: Ion sources, systems and methods are disclosed.

Abstract: With a detector system for the specimen chamber of a scanning electron microscope, signals are simultaneously detected in transmission which signals correspond to a light field contrast and a dark field contrast. The detector system (14) includes four detectors (15 to 18) in a plane (25) between which an aperture (19) for free access of electrons is located. Behind the aperture (19), a further detector (27) is arranged in a second plane (26). The detectors are preferably diodes. The detectors (15, 16, 17, 18) in the first plane (25), which is closer to the specimen, serve to generate signals which correspond to a dark field contrast. The further detector (27), more distant from the specimen, detects signals corresponding to a light field contrast. Large dead spaces, which are not sensitive to electrons, between the diodes and around the aperture (19), can be avoided by the offset arrangement of four diodes (15, 16, 17, 18) in the first plane (25).

Abstract: A detector system for a particle beam apparatus, in particular for a scanning electron microscope, has a target structure, which in a central region near the optical axis includes an electron-converting material. The target structure also includes either a non-converting material in a region remote from the optical axis or the region remote from the optical axis is offset in the direction of the optical axis with respect to the region near the optical axis that includes the electron-converting material. The detector system makes possible separate detection of only back-scattered electrons or only secondary electrons.

Abstract: A detector system for a particle beam apparatus, in particular for a scanning electron microscope, has a target structure, which in a central region near the optical axis includes an electron-converting material. The target structure also includes either a non-converting material in a region remote from the optical axis or the region remote from the optical axis is offset in the direction of the optical axis with respect to the region near the optical axis that includes the electron-converting material. The detector system makes possible separate detection of only back-scattered electrons or only secondary electrons.

Abstract: A particle beam apparatus that can be used, in particular in an electron microscope, has a dispersively imaging energy filter in the illumination beam path. A higher energy sharpness of the particles contributing to the further particle-optic imaging, and hence a reduction of the effect of chromatic aberrations, is attained by means of the energy filter. So that voltage fluctuations of the applied high voltage also bring about no drift of the image of the beam producer in spite of the dispersion present after complete passage through the filter, the beam producer is imaged, enlarged, in a plane of the filter that is imaged achromatically by the filter into an output image plane. Because of the high dispersion of the dispersive filter as against non-dispersive filters, the particle beam apparatus can be operated at a higher particle energy within the filter, so that the influence of the Boersch effect is reduced in comparison with non-dispersive filters.

Abstract: The invention is directed to an electron energy filter which is assembled from three or four plates placed together in a sandwich-like configuration. The pole pieces are seated on the inner sides of the outer plates and attached thereto. The pole pieces can therefore be produced in pairs so that their outer surfaces match precisely. This assembly is economical and provides a precise manufacture.

Abstract: The invention is directed to a high-voltage lead-through arrangement for introducing a high voltage into an enclosure wherein a vacuum is maintained such as for particle-beam apparatus. The arrangement includes: a high-voltage electrode for carrying a high potential; an insulator enclosing the high-voltage electrode and having a surface defining a boundary with the vacuum; and, an outer low-voltage electrode surrounding the insulator for carrying a low potential. The electrodes are spaced from each other by an electrode spacing measured along the surface of the insulator. The high-voltage electrode and the insulator conjointly define a first region wherein the high potential is present to a good approximation; and the first region is bounded by the insulator surface for a first distance of up to approximately 1/10 of the electrode spacing.