Abstract: A pressure sensor comprises a first substrate containing a processing circuit integrated thereon and a cap attached to the first substrate. The cap includes a container, a holder, and one or more suspension elements for suspending the container from the holder. The container includes a cavity and a deformable membrane separating the cavity and a port open to an outside of the pressure sensor. The container is suspended from the holder such that the deformable membrane faces the first substrate and such that a gap is provided between the deformable membrane and the first substrate which gap contributes to the port. Sensing means are provided for converting a response of the deformable membrane to pressure at the port into a signal capable of being processed by the processing circuit.

Abstract: A portable electronic device and related methods are described using an integrated chemical sensor linked to a chemical sensor processing unit and being sensitive to the concentration of a component in a sample of air and further including an operating system providing instructions for the control of the portable device, wherein the chemical processing unit uses under operating conditions a first set of instructions and a second set of instructions stored within the portable device, wherein the first set of instructions is part of the operating system level of instructions and the second set of instructions is part of a user of instructions with the second set of instructions being linked to the operating system via a plugin interface and wherein the second set of instructions is communicated to the portable device from a remote computing system based on access to measurements and/or operating conditions of the chemical sensor.

Abstract: A CMOS gas sensor comprises a membrane (13) extending over an opening (12) of a silicon substrate (1). A patch (2) of sensing material is arranged on the membrane (13) and in contact with electrodes (3) of platinum. A heater (5) of tungsten is located in or on the membrane (13) at the location of the patch (2) of metal-oxide sensing material. Combining platinum electrodes (3) with a tungsten heater (5) on top of a CMOS structure provides a gas sensor of high reliability and stability.

Abstract: A pressure sensor comprises a first substrate containing a processing circuit integrated thereon and a cap attached to the first substrate. The cap includes a container, a holder, and one or more suspension elements for suspending the container from the holder. The container includes a cavity and a deformable membrane separating the cavity and a port open to an outside of the pressure sensor. The container is suspended from the holder such that the deformable membrane faces the first substrate and such that a gap is provided between the deformable membrane and the first substrate which gap contributes to the port. Sensing means are provided for converting a response of the deformable membrane to pressure at the port into a signal capable of being processed by the processing circuit.

Abstract: A differential pressure sensor comprises a membrane arranged over a cavity on a semiconductor substrate. A lid layer is arranged at the top side of the device and comprises an access opening for providing access to the top side of the membrane. A channel extends laterally from the cavity and intersects with a bore. The bore is formed by laser drilling from the bottom side of the substrate and provides access to the bottom side of the membrane. The bore extends all through the substrate and optionally into the lid layer.

Abstract: In order to allow application programs access to a gas sensor, a versatile mechanism is provided that allows to provide a flexible sensor control through a simple, fixed API. The mechanism is designed to let the application program query the possible operating modes of the gas sensor. The operating modes e.g. specify the methods for controlling the gas sensor and for processing its raw data.

Abstract: A chemical sensor (11) of a portable electronic device (1) is authenticated by reading a cryptographic sensor identifier from a memory of the chemical sensor and transmitting sensor-related data from the portable electronic device to a remote evaluation unit (6), the sensor-related data comprising the cryptographic sensor identifier. The sensor-related data may be transmitted in encrypted form. The sensor-related data may be complemented with a device identifier for the portable electronic device.

Abstract: A portable electronic device and related methods are described using an integrated chemical sensor linked to a chemical sensor processing unit and being sensitive to the concentration of a component in a sample of air and further including an operating system providing instructions for the control of the portable device, wherein the chemical processing unit uses under operating conditions a first set of instructions and a second set of instructions stored within the portable device, wherein the first set of instructions is part of the operating system level of instructions and the second set of instructions is part of a user of instructions with the second set of instructions being linked to the operating system via a plugin interface and wherein the second set of instructions is communicated to the portable device from a remote computing system based on access to measurements and/or operating conditions of the chemical sensor.

Abstract: A CMOS gas sensor comprises a membrane (13) extending over an opening (12) of a silicon substrate (1). A patch (2) of sensing material is arranged on the membrane (13) and in contact with electrodes (3) of platinum. A heater (5) of tungsten is located in or on the membrane (13) at the location of the patch (2) of metal-oxide sensing material. Combining platinum electrodes (3) with a tungsten heater (5) on top of a CMOS structure provides a gas sensor of high reliability and stability.

Abstract: A pressure sensor is manufactured by joining two wafers, the first wafer comprising CMOS circuitry and the second being an SOI wafer. A recess is formed in the top material layer of the first wafer, which is covered by the silicon layer of the second wafer to form a cavity. Part or all of the substrate of the second wafer is removed to forming a membrane from the silicon layer. Alternatively, the cavity can be formed in the second wafer. The second wafer is electrically connected to the circuitry on the first wafer. This design allows to use standard CMOS processes for integrating circuitry on the first wafer.

Abstract: A differential pressure sensor comprises a membrane arranged over a cavity on a semiconductor substrate. A lid layer is arranged at the top side of the device and comprises an access opening for providing access to the top side of the membrane. A channel extends laterally from the cavity and intersects with a bore. The bore is formed by laser drilling from the bottom side of the substrate and provides access to the bottom side of the membrane. The bore extends all through the substrate and optionally into the lid layer.

Abstract: A pressure sensor is manufactured by joining two wafers, the first wafer comprising CMOS circuitry and the second being an SOI wafer. A recess is formed in the top material layer of the first wafer, which is covered by the silicon layer of the second wafer to form a cavity. Part or all of the substrate of the second wafer is removed to forming a membrane from the silicon layer. Alternatively, the cavity can be formed in the second wafer. The second wafer is electrically connected to the circuitry on the first wafer. This design allows to use standard CMOS processes for integrating circuitry on the first wafer.

Abstract: A pressure sensor is manufactured by joining two wafers (1a, 14), the first wafer comprising CMOS circuitry and the second being an SOI wafer. A recess is formed in the top material layer of the first wafer, which is covered by the silicon layer of the second wafer to form a cavity. Part or all of the substrate of the second wafer is removed to forming a membrane from the silicon layer. Alternatively, the cavity can be formed in the second wafer. The second wafer is electrically connected to the circuitry on the first wafer. This design allows to use standard CMOS processes for integrating circuitry on the first wafer.