Abstract: A rewritable single-sided double layer optical information medium having a first recording stack with a phase change recording layer sandwiched between two dielectric layers. The recording stack is sufficiently transmissive to ensure proper reading/writing of the second recording stack. For this purpose, the recording stack includes a thin metal layer and a further dielectric layer. The laser beam can be focused on the first recording stack or on the second recording stack, thus doubling the storage capacity of the recording medium.

Abstract: In an interferometer system, variations of the refractive index in the medium traversed by the measuring beam (123) can be detected by using two measuring beams (123, 125) having wavelengths which differ by a factor of three. For this choice of the wavelength ratio, the interference filters of the polarization elements, such as the beam splitter (127), the .lambda./4 plates (130, 131) and the antireflection coatings can be manufactured relatively easily, and the detection accuracy is increased.

Abstract: A rewritable optical information medium has a phase-change recording layer (3) on the basis of an alloy of Ge-Sb-Te-O, having the composition (Ge.sub.a Sb.sub.b Te.sub.c).sub.1-d O.sub.d, wherein:a+b+c=10.0001 a d a 0.035The addition of oxygen considerably speeds up the crystallization rate of Ge-Sb-Te materials. Such a medium is suitable for high speed recording (i.e. at least eight times the CD-speed), such as for DVD-RAM and optical tape. The amount of oxygen in the recording layer (3) can be used to tune the crystallization rate to the desired value.

Abstract: A read-only optical registration medium which successively includes:a transparent substrate;a first registration surface containing localized level variations representing binary data bits;a protective layer,whereby:between the substrate and the first registration surface, the medium further includes a dielectric trilayer which contains a first, second and third dielectric layer having respective refractive indices n.sub.1, n.sub.2 and n.sub.3, whereby, at both a first wavelength .lambda..sub.1 and a second wavelength .lambda..sub.2 :n.sub.2 <n.sub.1 and n.sub.2 <n.sub.3, the trilayer being constituted so as to be transparent at .lambda..sub.1 and to be semi-reflective at .lambda..sub.2 ;the surface of the trilayer nearest the substrate contains localized level variations representing binary data bits, thereby forming a second registration surface.

Abstract: The invention relates to a method of manufacturing a radiation-emitting semiconductor diode (10) whereby a sacrificial layer (1) comprising a polymer is provided on a first side face (11) of a semiconductor body (20) which contains at least one radiation-emitting semiconductor diode (10), a coating (2) is subsequently provided on the first side face (11) and on a second side face (12) of the semiconductor body (20) which encloses an angle with the first side face (11) and which forms an exit face for the radiation to be generated by the diode (10), after which the first side face (11) is divested of the sacrificial layer (1) and of the portion (21) of the coating (2) situated thereon through etching of the sacrificial layer (1). It is possible by such a method, for example, to cover the mirror faces (11, 14) of a laser diode (10) selectively with a reflecting, anti-reflection, or passivating coating (2). A disadvantage of the known method is that laser diodes (10) manufactured thereby are difficult to solder.

Abstract: A method of manufacturing an optoelectronic semiconductor device whereby a surface (1) of a semiconductor (2) built up from a number of layers of semiconductor material (4, 5, 6, 7) grown epitaxially on a semiconductor substrate (3), with a top layer (4) of GaAs adjoining the surface (1) and a subjacent layer (5) comprising InP, in particular made of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P with 0.5<x<0.8 and 0.4<y<0.6, is provided with an etching mask (8), after which the top layer (4) and the subjacent layer (5) are locally etched in a plasma generated in a gas mixture comprising SiCl.sub.4 and Ar. According to the invention, CH.sub.4 is added to the gas mixture in which the plasma is generated. This measure leads to the creation of a smooth surface during etching of both layers, and in particular during etching of the layer comprising InP. The walls (10) of the ridge (9) formed in the layers are also smooth and steep.

Abstract: Projection television display device includes three monochrome projection television display tubes (20, 21, 22) each having a display screen (24, 25, 26) which is provided on the inside of the display window (23) and luminesces in a different color. Each tube has an optical axis extending perpendicularly from the center of the display screen, the optical axes (33, 34, 35) of the three display screens being co-planar. The axes (34, 33) of the display screens of the first and second tubes (20, 22) coincide and the axis (35) of the display window of the third tube (21) constitutes the main axis of the device, the axis being perpendicular to the two coincident axes (33, 34). Two flat dichroic intersecting reflective mirrors (27, 29) extend perpendicularly of the plane and through the point of intersection of the axes, each at an angle of 45.degree. with the main axis.

Abstract: A color cathode ray tube of the shadow mask or beam index type in which the screen structure applied to the faceplate has a plurality of triplets of optical interference filter stripes which are adapted to pass red (R), green (G) and blue (B) light produced by a homogeneous cathodoluminescent screen layer. The usual aluminium layer may be applied to the screen layer. The optical interference filter stripes may have short wave pass filters, band pass filters or a combination of both types. The short wave pass filter stripes may have modified quarter wavelength multilayer dielectric filters and the bandpass filter may have a Fabry-Perot filter.

Abstract: An anti-reflection coating which comprises at least a three layer interference filter is evaporated on the external surface of a faceplate panel. The manufacture of the coating can be speeded-up substantially by selecting high and low refractive index materials which can be evaporated at ambient temperatures and subsequently hardened by high temperature annealing outside the evaporation apparatus. The annealing is carried out most conveniently during the standard processing of a cathode ray tube.

Abstract: A display tube comprising in an evacuated envelope (1) a display screen (7) provided on the inside of a display window (2) in the wall of the envelope (1), which display screen (7) comprises luminescent material (13), and a multilayer interference filter (12) is provided between this material and the display window and compises a number of layers (HL) which alternately are manufactured from a material having a high (H) and a material having a low (L) refractive index. If the filter is composed substantially of 14 to 30 layers, each having an optical thickness nd, wherein n is the refractive index of the material and d is the thickness, which optical thickness is between 0.2 .lambda..sub.f and 0.3 .lambda..sub.f and preferably between 0.23 .lambda..sub.f and 0.27 .lambda..sub.f, wherein .lambda..sub.f is equal to p x .lambda., wherein .lambda. is the desired central wavelength which is selected from the spectrum emitted by the luminescent material (13) and p is a number between 1.18 and 1.

Abstract: A display tube comprising in an evacuated envelope (1) a display screen (7) provided on the inside of a display window (2) in the wall of the envelope (1), which display screen (7) comprises luminescent material (13), and a multilayer interference filter (12) is provided between this material and the display window and comprises a number of layers (HL) which alternately are manufactured from a material having a high (H) and a material having a low (L) refractive index. If the filter is composed substantially of 6 to 30 layers, each having an optical thickness nd, wherein n is the refractive index of the material and d is the thickness, which optical thickness is between 0.2.lambda..sub.f and 0.3.lambda..sub.f and preferably between 0.23.lambda..sub.f and 0.25.lambda..sub.f, wherein .lambda..sub.f is equal to p x.lambda., wherein .lambda. is the desired central wavelength which is selected from the spectrum emitted by the luminescent material (13) and p is a number between 1.15 and 1.