Abstract: Method of manufacturing an electrically conductive pattern of tin-doped indium oxide (ITO) on a substrate.Tin-doped indium oxide (ITO) can be selectively etched relative to the metals Mo, W and TiW in an etching bath which is obtained by diluting concentrated halogen acid, for example hydrochloric acid, with a liquid having a lower dielectric constant than water, such as acetic acid or methanol. This is particularly advantageous in the manufacture of the MIM switching elements which are present on the active plate of LCDs.

Abstract: A method of manufacturing a semiconductor device in which a silicon layer (8) is epitaxially grown on the surface of a doped monocrystalline semiconductor body (7), whereafter a connection is established between said semiconductor body (7) and a second semiconductor body (1) which is used as a supporting body, while at least one of the surfaces of the two bodies is firstly provided with an insulating layer (2,3) and a rigid connection is established between the bodies, whereafter the monocrystalline semiconductor body (7) is electrochemically etched away down to the epitaxially grown silicon layer (8), parts of the insulating layer (2,3) being removed prior to establishing the connection between the bodies (1,7), whereafter a layer of electrically conducting material (6) is deposited on the surface with a thickness which is larger than that of the insulating layer, whereafter a polishing treatment is performed at least down to the insulating layer.