Patents by Inventor Johannes E. J. Schmitz

Johannes E. J. Schmitz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a semiconductor device including a titanium disilicide contact
    Patent number: 4904620
    Abstract: The invention relates to a method of manufacturing a semiconductor device, in which a titanium disilicide layer is formed on a substrate by means of a chemical reaction activated by a plasma from the gaseous phase. In a readily reproducible manner, this is achieved in that titanium silicide layers (2,4,6) having an atomic ratio of titanium to silicon of at least about 4:5 and silicon layers (3,5,7) are alternately deposited from the gaseous phase and these layers are homogenized in a heat treatment to a titanium disilicide layer.
    Type: Grant
    Filed: April 4, 1988
    Date of Patent: February 27, 1990
    Assignee: U.S. Philips Corporation
    Inventor: Johannes E. J. Schmitz
  • Method of manufacturing a semiconductor device
    Patent number: 4892843
    Abstract: The invention relates to a method of manufacturing a semiconductor device, in which a tungsten layer is provided on a surface of a substrate by reduction of tungsten hexafluoride with hydrogen.According to the invention, the contact resistance of the tungsten with the substrate is considerably reduced by first providing a tungsten layer on the substrate by reduction of tungsten hexafluoride with silane.
    Type: Grant
    Filed: December 28, 1988
    Date of Patent: January 9, 1990
    Assignee: U.S. Philips Corporation
    Inventors: Johannes E. J. Schmitz, Antonius J. M. Van Dijk, Russell C. Ellwanger
  • Method of establishing a structure of electrical interconnections on a silicon semiconductor device
    Patent number: 4851369
    Abstract: After having formed contact islands (20) comprising at least one layer of silicide (20) of titanium or cobalt, these islands are covered by a complementary metallic layer (30) obtained by selective growth of tungsten or molybdenum, which is localized at the said islands. This complementary metallic layer especially serves as a stopping layer during etching of contact openings (33) into an isolating layer (32) supporting the remaining part of the structure of interconnections.
    Type: Grant
    Filed: November 7, 1988
    Date of Patent: July 25, 1989
    Assignee: U.S. Philips Corporation
    Inventors: Russell C. Ellwanger, Johannes E. J. Schmitz