Abstract: A pattern structure of at least two different layer system elements disposed adjacent one beside the other upon a carrier substrate, at least one of said layer system elements comprises a layer of dielectric material, the layer of dielectric material residing upon a layer of a material that is resistant to activated oxygen or activated water and having a second surface facing toward the substrate. The dielectric layer of the one layer system element forms a disturbed region between the adjacent layer system elements, the dielectric layer having a thickness of d5 and wherein the disturbed region has a width of at most 10*d5.

Abstract: A pattern structure has at least two different color filter elements disposed one beside the other on a carrier substrate. Each element includes a layer of dielectric material, the layer of dielectric material residing at at least one of the filter elements on a layer of a material that is resistant to activated oxygen or activated water. The layer of resistant material has a second surface pointing toward the substrate and is made of silicon or silicon dioxide.

Abstract: A process for the production of a color filter layer system structure on a substrate uses a structure lacquer layer which is deposited in a lift-off technique on the substrate. Lacquer layer surface regions and regions free of lacquer layer are present. Subsequently through a vacuum coating process a color filter layer system is deposited and subsequently with the lacquer layer surface regions the regions of the color filter layer system deposited thereon are removed. The deposition of the color filter layer system takes place through a plasma-enhanced coating at a temperature of maximally 150° C. The deposition takes place, for example, by sputtering or plasma-enhanced vapor deposition.