Patents by Inventor Johannes Haerle

Johannes Haerle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11634718
    Abstract: The invention relates to recombinant microorganisms and methods for producing macrocyclic ketones and macrocyclic ketone precursors.
    Type: Grant
    Filed: November 1, 2018
    Date of Patent: April 25, 2023
    Assignee: TAKASAGO INTERNATIONAL CORPORATION
    Inventors: Curt aimé Friis Nielsen, Jon Heal, Johannes Haerle
  • Patent number: 11299717
    Abstract: The invention relates to recombinant microorganisms and methods of producing citronellal, citronellol, citronellic acid, and/or citronellal/citronellol pathway intermediates and precursors.
    Type: Grant
    Filed: October 11, 2017
    Date of Patent: April 12, 2022
    Inventors: Thomas Oestergaard Tange, Johannes Haerle, Fanny Delegrange, Julien Denis Vivian De Block, Robert Charles Allan, Philipp Friedrich Berninger, Christophe Folly, Davide Antonio Ravasio, Ludivine Labagnere, Federico Brianza, Curt Aimé Friis Nielsen, Jørgen Hansen, Nora Weber, Samantha Jessica Capewell
  • Publication number: 20200347412
    Abstract: The invention relates to recombinant microorganisms and methods for producing macrocyclic ketones and macrocyclic ketone precursors.
    Type: Application
    Filed: November 1, 2018
    Publication date: November 5, 2020
    Applicant: TAKASAGO INTERNATIONAL CORPORATION
    Inventors: Curt aimé Friis NIELSEN, Jon HEAL, Johannes HAERLE
  • Publication number: 20190225945
    Abstract: The invention relates to recombinant microorganisms and methods of producing citronellal, citronellol, citronellic acid, and/or citronellal/citronellol pathway intermediates and precursors.
    Type: Application
    Filed: October 11, 2017
    Publication date: July 25, 2019
    Inventors: Thomas Oestergaard Tange, Johannes Haerle, Fanny Delegrange, Julien Denis Vivian De Block, Robert Charles Allan, Philipp Friedrich Berninger, Christophe Folly, Davide Antonio Ravasio, Ludivine Labagnere, Federico Brianza, Curt Aimé Friis Nielsen, Jørgen Hansen, Nora Weber, Samantha Jessica Capewell
  • Patent number: 9373747
    Abstract: A method for producing an optoelectronic component is provided. A transfer layer, containing InxGa1-xN with 0<x<1, is grown onto a growth substrate. Subsequently, ions are implanted into the transfer layer to form a separation zone, a carrier substrate is applied, and the transfer layer is separated by way of heat treatment. A further transfer layer, containing InyGa1-yN with 0<y?1 and y>x, is grown onto the previously grown transfer layer, ions are implanted into the further transfer layer to form a separation zone, a further carrier substrate is applied, and the further transfer layer is separated by way of heat treatment. Subsequently, a semiconductor layer sequence, containing an active layer, is grown onto the surface of the further transfer layer facing away from the further carrier substrate.
    Type: Grant
    Filed: September 12, 2012
    Date of Patent: June 21, 2016
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Joachim Hertkorn, Tetsuya Taki, Karl Engl, Johannes Baur, Berthold Hahn, Volker Haerle, Ann-Kathrin Haerle, Jakob Johannes Haerle, Johanna Magdalena Haerle
  • Patent number: 9123528
    Abstract: A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: September 1, 2015
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Johannes Baur, Berthold Hahn, Karl Engl, Ann-Kathrin Haerle, Jakob Johannes Haerle, Johanna Magdalena Haerle, Joachim Hertkorn, Tetsuya Taki
  • Publication number: 20150044798
    Abstract: A method for producing an optoelectronic component is provided. A transfer layer, containing InxGa1-xN with 0<x<1, is grown onto a growth substrate. Subsequently, ions are implanted into the transfer layer to form a separation zone, a carrier substrate is applied, and the transfer layer is separated by way of heat treatment. A further transfer layer, containing InyGa1-yN with 0<y?1 and y>x, is grown onto the previously grown transfer layer, ions are implanted into the further transfer layer to form a separation zone, a further carrier substrate is applied, and the further transfer layer is separated by way of heat treatment. Subsequently, a semiconductor layer sequence, containing an active layer, is grown onto the surface of the further transfer layer facing away from the further carrier substrate.
    Type: Application
    Filed: September 12, 2012
    Publication date: February 12, 2015
    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Ann-Kathrin Haerle, Jakob Johannes Haerle, Johanna Magdalena Haerle